MRF18085A

Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805- 1880 MHz. • GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840 MHz, 85 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18085ALR3 MRF18085ALSR3 1805- 1880 MHz, 85 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18085ALR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18085ALSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 273 1.56 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.79 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF18085ALR3 MRF18085ALSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Common- Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) Gps η IRL P1dB 13.5 48 — 83 15 52 - 12 90 — — -9 — dB % dB Watts Crss — 3.6 — pF VGS(th) VGS(Q) VDS(on) 2 2.5 — — 3.9 0.15 4 4.5 — Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit 1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch- to - batch consistency. MRF18085ALR3 MRF18085ALSR3 2 RF Device Data Freescale Semiconductor VSUPPLY VBIAS + C4 R1 R2 C5 C6 R3 RF INPUT Z1 C2 Z2 C1 Z4 Z5 Z6 DUT Z7 Z8 Z9 Z10 Z11 C10 C3 Z12 RF OUTPUT C7 C8 + C9 Z3 C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3 10 pF Chip Capacitors, ATC 1.8 pF Chip Capacitor, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, ATC 10 kW, 1/4 W Chip Resistors (1206) 1.0 kW, 1/4 W Chip Resistor (1206) 0.671″ x 0.087″ Microstrip 0.568″ x 0.087″ Microstrip 0.500″ x 0.098″ Microstrip Shorted Stub Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB 0.610″ x 00.118″ Microstrip 0.331″ x 1.153″ Microstrip 0.063″ x 1.153″ Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 30 mils, εr = 2.55 Figure 1. 1805 - 1880 MHz Test Fixture Schematic C9 R1 C5 C6 R2 R3 C2 C1 Strap CUT OUT AREA C7 C8 C4 C3 C10 MRF18085A Rev0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MRF18085ALR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 0 1 10 100 1000 Pout, OUTPUT POWER (WATTS) 400 mA IDQ = 1000 mA 800 mA 600 mA VDD = 26 Vdc f = 1840 MHz TC = 25_C G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 10 9 8 0.1 IDQ = 800 mA f = 1840 MHz TC = 25_C 1 10 Pout, OUTPUT POWER (WATTS) 32 V 28 V 24 V VDD = 20 V 100 1000 Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 17 Pout , OUTPUT POWER (WATTS) 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 9 1 10 100 1000 Pout, OUTPUT POWER (WATTS) 50_C 85_C TC = 25_C VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz 120 Pin = 8 W 100 80 60 40 20 0 1800 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 1W 0.5 W 4W 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Frequency 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 1750 IRL @ 30 W IRL @ 80 W VDD = 26 Vdc IDQ = 800 mA TC = 25_C 1800 1850 f, FREQUENCY (MHz) 1900 Gps @ 30 W Gps @ 80 W 0 −4 −8 −12 −16 −20 −24 16 Gps IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 15 14 13 12 11 VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz TC = 25_C 60 50 40 30 20 η 10 0 1000 η, DRAIN EFFICIENCY (%) −28 1950 10 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Frequency Figure 8. Power Gain and Efficiency versus Output Power MRF18085ALR3 MRF18085ALSR3 4 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload f = 1710 MHz f = 1990 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz 1710 1785 1805 1880 1930 1960 1990 Zsource Ω 1.13 - j3.62 1.61 - j4.23 1.69 - j4.34 2.83 - j5.25 3.00 - j5.18 4.39 - j4.97 6.59 - j4.74 Zload Ω 1.79 - j2.88 1.82 - j3.15 1.90 - j2.66 2.09 - j2.77 2.01 - j2.44 2.01 - j2.57 1.79 - j2.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF18085ALR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 5 NOTES MRF18085ALR3 MRF18085ALSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF18085ALR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE A CASE 465A - 06 ISSUE H NI - 780S MRF18085ALSR3 MRF18085ALR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF18085ALR3 MRF18085ALSR3 8Rev. 6, 5/2006 Document Number: MRF18085A RF Device Data Freescale Semiconductor