MRF377HR5

Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Drain Efficiency ≥ 21% ACPR ≤ - 58 dBc • Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2000 mA Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Drain Efficiency ≥ 27.5% IMD ≤ - 31.3 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Device Designed for Push - Pull Operation Only • Integrated ESD Protection • Excellent Thermal Stability • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS ID PD Tstg TC TJ CW MRF377HR3 MRF377HR5 470 - 860 MHz, 45 W AVG., 32 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 375G - 04, STYLE 1 NI - 860C3 Value - 0.5, +65 - 0.5, +15 17 648 3.7 - 65 to +150 150 200 235 1.38 Unit Vdc Vdc Adc W W/°C °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 105 W CW Case Temperature 77°C, 45 W CW Symbol RθJC Value (1,2) 0.27 0.29 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF377HR3 MRF377HR5 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) 7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol V(BR)DSS IDSS IGSS VGS(th) Min 65 — — — Typ — — — 2.8 Max — 1 1 — Unit Vdc μAdc μAdc Vdc Drain - Source Breakdown Voltage (4) (VGS = 0 Vdc, ID =10 μA) Zero Gate Voltage Drain Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μA) On Characteristics Gate Quiescent Voltage (3) (VDS = 32 Vdc, ID = 2000 mAdc) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 3 A) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA, f = 860 MHz) VGS(Q) VDS(on) 2.5 — 3.5 0.27 4.5 — Vdc Vdc Crss — 3.2 — pF Functional Tests (3) (In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system) Gps 16.5 18.2 — dB ηD 21 22.9 — % ACPR — - 59.2 - 57 dBc Typical Performances (3) (In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz 1. 2. 3. 4. Each side of device measured separately. Part is internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. (continued) Gps — — — — — 17.6 17.6 17.4 17.4 16.8 — — — — — dB MRF377HR3 MRF377HR5 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Drain Efficiency (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Adjacent Channel Power Ratio (VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Symbol ηD — — — — — ACPR — — — — — - 59.3 - 59.3 - 58.7 - 58.7 - 58.1 — — — — — 23.5 25.8 23.0 22.7 21.3 — — — — — dBc Min Typ Max Unit % Typical Performances (1) (In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Drain Efficiency (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Intermodulation Distortion (VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz 1. Measurement made with device in push - pull configuration. Gps — — — — — ηD — — — — — IMD — — — — — 31.7 32.7 32.9 34.2 35.4 — — — — — 31.0 34.3 30.1 29.6 27.8 — — — — — dBc 17.5 17.5 17.2 17.2 16.6 — — — — — % dB MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 3 Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values Part B1, B2 Balun 1, Balun 2 C1 C2 C3 C4, C5 C6 C7, C8, C9, C10 C11, C12 C13, C14, C15, C16 C17, C18 C19, C20 C21, C22, C23, C24 C25, C26 L1 L2 L3, L4 R1, R2 WB1, WB2, WB3, WB4 PCB Description Ferrite Beads, Surface Mount, 11 Ω (0805) 0.8 - 1GHz Xinger Balun 33 pF Chip Capacitor (0805) 2.7 pF Chip Capacitor (0603) 12 pF Chip Capacitor (0805) 6.8 pF Chip Capacitors (0805) 2.7 pF Chip Capacitor (0805) 3.3 pF Chip Capacitors (0805) 2.2 μF, 50 V Chip Capacitors 0.01 μF, 100 V Chip Capacitors 0.56 μF, 50 V Chip Capacitors 10 μF, 50 V Tantalum Chip Capacitors 47 μF, 16 V Tantalum Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 12 nH Inductor (0603) 7.15 nH Inductor 10 nH Inductor (0603) 24 Ω, 1/8 W, 5% Chip Resistors (1206) Brass Wear Shims Arlon 30 mil, εr = 2.56 DS1152 DS Electronics 3A412 08055J330JBT 06035J2R7BBT 08051J120GBT 08051J6R8BBT 0805J2R7BBT 08051J3R3BBT C1825C225J5RAC3810 C1825C103J1GAC C1825C564J5RAC 522Z050/100MTRE TPSD476K016R0150 NACZF471M63V (18x22) 0603HC- 12NXJB 1606 - 7 0603HC- 10NXJB Part Number 2508051107Y0 Manufacturer Fair - Rite Anaran AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera Kemet Kemet Kemet Tecate AVX / Kyocera Nippon CoilCraft CoilCraft CoilCraft MRF377 Gate C19 VGG C22 C21 Balun 1 C14 R1 WB1 L3 B1 C15 WB3 C18 C11 C9 MRF377 Drain VDD C26 Balun 2 L2 C5 C6 C7 C2 C1 L1 WB2 C3 C4 WB4 C8 R2 C13 C24 VGG C23 L4 C10 B2 C16 C17 C25 C12 C20 DS1152−A Rev 0 VDD DS1152−B Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout MRF377HR3 MRF377HR5 4 RF Device Data Freescale Semiconductor TYPICAL NARROWBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 19 18.5 Gps G ps , POWER GAIN (dB) 18 −20 −30 IDQ = 1400 mA −40 1600 mA −50 1800 mA 2000 mA 2200 mA −60 VDD = 32 Vdc f1 = 859.95 MHz, f2 = 860.05 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 17.5 17 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 16.5 16 −70 Figure 2. Two - Tone Power Gain versus Output Power Figure 3. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −20 −30 ηD, DRAIN EFFICIENCY (%) −40 −50 −60 7th Order −70 −80 10 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 45 40 35 30 25 20 15 10 5 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz ηD 3rd Order 5th Order Figure 4. Intermodulation Distortion Products versus Output Power Figure 5. Two - Tone Drain Efficiency versus Output Power 18 G ps , POWER GAIN (dB) 17 Gps 40 20 ηD 0 VDD = 32 Vdc IDQ = 2000 mA f1 = 859.95 MHz, f2 = 860.05 MHz IMD −20 −40 −60 −80 10 100 Pout, OUTPUT POWER (WATTS) PEP 16 15 14 13 12 Figure 6. Power Gain, Efficiency and IMD versus Output Power MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 5 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 19 60 f = 845 MHz Zload f = 875 MHz Zsource f = 875 MHz f = 845 MHz Z o = 10 Ω VDD = 32 V, IDQ = 2000 mA, Pout = 45 W Avg., DVBT OFDM f MHz 845 860 875 Zsource Ω 4.66 - j5.90 4.38 - j5.64 3.93 - j5.33 Zload Ω 8.59 - j4.22 9.36 - j4.95 9.39 - j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance MRF377HR3 MRF377HR5 6 RF Device Data Freescale Semiconductor Table 6. 470—860 MHz Broadband Test Circuit Component Designations and Values Part B1, B2 Balun 1, Balun 2 C1 C2, C5 C3 C4, C7, C12, C15, C17 C6 C8 C9, C10 C11, C14 C13 C16 C18 C19, C20, C21, C22 C23, C26 C24, C25, C27, C29 C28, C30 C31, C32 C33, C34 L1, L2 L3, L4 L5, L6 L7 L8 R1, R2 PCB Gate, PCB Drain Description Ferrite Beads, Surface Mount, 30 Ω (0603) Rogers 3.006, εr = 6.06, 1 oz Cu 12 pF Chip Capacitor (0603) 12 pF Chip Capacitors (0805) 3.9 pF Chip Capacitor (0805) 8.2 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 0.4 - 2.5 pF Variable Capacitor 3.3 pF Chip Capacitors (0603) 10 pF Chip Capacitor (0805) 4.7 pF Chip Capacitor (0805) 2.2 pF Chip Capacitor (0603) 2.2 pF Chip Capacitor (0805) 47 μF, 16 V Tantalum Chip Capacitors 2.2 μF, 50 V Ceramic Chip Capacitors 0.01 μF, 100 V Ceramic Chip Capacitors 0.56 μF, 50 V Ceramic Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 15 nH Inductors (0603) 12 nH Inductors (0603) 8 nH Coil Inductors 22 nH Coil Inductor 18.5 nH Coil Inductor 12.1 Ω, 1/16 W, 1% Chip Resistors (0603) PCB Motherboard w/Integrated Daughterboard, Rogers 3003, εr = 3.03, 0.5 oz Cu DS1047 DS Electronics Part Number 2506033007Y0 DS1046 06035J120GBT 08051J120GBT 08051J3R9BBT 08051J8R2BBT 08051J3R3BBT 27283PC 06035J3R3BBT 08051J100GBT 08051J4R7BBT 06035J2R2BBT 08051J2R2BBT TPSD476K016R0150 C1825C225J5RAC3810 C1825C103J1GAC C1825C564J5GAC 522Z - 050/100MTRE SME63VB471M12X25LL L0603150GGW003 0603HC- 12NHJBU A03T - 5 B07T - 5 A05T - 5 Manufacturer Fair - Rite DS Electronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera Gigatronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX Kemet Kemet Kemet Tecate United Chemi - Con AVX CoilCraft CoilCraft CoilCraft CoilCraft MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 7 C34 VGG C20 C19 C32 L3 R1 C9 C23 C24 B1 C8 L8 C5 C7 B2 C26 C25 L4 R2 C10 Balun 1 C22 VGG C21 C33 VDD C31 Balun 2 L2 L6 C29 C30 C4 C2 C6 C3 C1 C12 C15 C11 C13 C14 C16 L1 L5 C27 C28 C17 L7 C18 VDD DS1047 Rev 4 DS1047 Rev 4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Multilayer Balun Mounting Detail Topside View Upside Down View Figure 8. 470 - 860 MHz Broadband Test Circuit Component Layout MRF377HR3 MRF377HR5 8 RF Device Data Freescale Semiconductor TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS ACPR, ADJACENT CHANNEL POWER RATIO ηD, DRAIN EFFICIENCY (%) 19 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 ACPR 9 420 480 Gps ηD VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols 40 35 30 25 20 −40 −45 −50 −55 −60 540 600 660 720 780 840 −65 900 10 f, FREQUENCY (MHz) Figure 9. Single - Channel DVBT OFDM Broadband Performance 19 18.5 G ps , POWER GAIN (dBc) 470 MHz 18 560 MHz 660 MHz 860 MHz 760 MHz VDD = 32 Vdc, IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 30 25 ηD, DRAIN EFFICIENCY (%) 20 15 760 MHz 10 5 0 2 4 6 8 10 30 50 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 32 Vdc IDQ = 2000 mA 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 560 MHz 470 MHz 660 MHz 860 MHz 17.5 17 16.5 16 Figure 10. Single - Channel DVBT OFDM Broadband Performance Power Gain versus Output Power Figure 11. Single - Channel DVBT OFDM Broadband Performance Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −56 −20 −58 470 MHz −60 −62 −64 −66 −68 10 Pout, OUTPUT POWER (WATTS) AVG. 100 VDD = 32 Vdc IDQ = 2000 mA 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols 660 MHz 860 MHz 760 MHz (dB) −30 −40 −50 −60 −70 −80 560 MHz −90 −100 −110 −5 −4 −3 −2 −1 0 1 2 3 4 5 f, FREQUENCY (MHz) 4 kHz BW 4 kHz BW 7.61 MHz Figure 12. Single - Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power Figure 13. 8K Mode DVBT OFDM Spectrum MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 9 TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS 18 17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 9 ACPR 8 420 480 540 600 660 720 780 840 ηD VDD = 32 Vdc Pout = 80 W (Avg.) IDQ = 2000 mA ATSC 8VSB Gps 45 40 35 30 25 −15 −20 −25 −30 −35 −45 900 ACPR, ADJACENT CHANNEL POWER RATIO ηD, DRAIN EFFICIENCY (%) f, FREQUENCY (MHz) Figure 14. Single - Channel ATSC 8VSB Broadband Performance 19 18.5 G ps , POWER GAIN (dBc) 470 MHz 18 17.5 860 MHz 17 16.5 16 10 Pout, OUTPUT POWER (WATTS) AVG. 100 760 MHz 560 MHz 660 MHz VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 40 35 ηD, DRAIN EFFICIENCY (%) 30 25 20 15 10 5 0 10 Pout, OUTPUT POWER (WATTS) AVG. 100 860 MHz 760 MHz VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 470 MHz 560 MHz 660 MHz Figure 15. Single - Channel ATSC 8VSB Broadband Performance Power Gain versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 16. Single - Channel ATSC 8VSB Broadband Performance Drain Efficiency versus Output Power −25 −10 −20 −30 860 MHz −40 −50 (dB) −60 −70 VDD = 32 Vdc IDQ = 2000 mA ATSC 8VSB 10 Pout, OUTPUT POWER (WATTS) AVG. 100 −80 −90 −100 −4.0 −3.2 −2.4 −1.6 −0.8 0 0.8 1.6 2.4 3.2 4.0 3.25 MHz Offset 3.25 MHz Offset IMRL IMRU Reference Point −30 −35 470 MHz −40 660 MHz 760 MHz −45 −50 560 MHz f, FREQUENCY (MHz) Figure 17. Single - Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power MRF377HR3 MRF377HR5 10 Figure 18. ATSC 8VSB Spectrum RF Device Data Freescale Semiconductor f = 470 MHz f = 470 MHz Zload Zsource Z o = 10 Ω f = 860 MHz Z o = 10 Ω f = 860 MHz Optimized for VDD = 32 V, IDQ = 2000 mA, Pout = 45 W Avg., DVBT OFDM f MHz 470 560 660 760 860 Zsource Ω 5.79 - j2.40 6.63 - j2.63 6.57 - j4.03 6.67 - j4.55 5.34 - j6.28 Zload Ω 6.21 - j1.69 5.66 - j1.12 6.76 - j1.00 6.57 - j1.91 7.37 - j5.45 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 11 NOTES MRF377HR3 MRF377HR5 12 RF Device Data Freescale Semiconductor NOTES MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 13 NOTES MRF377HR3 MRF377HR5 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G L ccc R M 4 2X TA M B M J 1 2 Q bbb M TA M B M (LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF B 5 4X (FLANGE) K 4X 3 4 S (INSULATOR) M D bbb M B TA M bbb TA M B M B M ccc M TA (LID) M B M N F E H bbb A (INSULATOR) M M C B M T TA A M SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375G - 04 ISSUE G NI - 860C3 MRF377HR3 MRF377HR5 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF377HR3 MRF377HR5 1Rev. 1, 5/2006 6 Document Number: MRF377H RF Device Data Freescale Semiconductor