MRF6S18100NR1_08

Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, f = 1990 MHz Power Gain — 14.5 dB Drain Efficiency — 49% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain — 15 dB Drain Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 2% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S18100NR1 MRF6S18100NBR1 1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 MRF6S18100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 MRF6S18100NBR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 CW Case Temperature 77°C, 40 CW Symbol RθJC Value (2,3) 0.51 0.62 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. MRF6S18100NR1 MRF6S18100NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) Dynamic Characteristics(1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1.6 1.5 — 2 2.8 0.24 3 3.5 — Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1990 MHz Gps ηD IRL P1dB 13 47 — 100 14.5 49 - 12 110 16 — -9 — dB % dB W Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg., 1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point 1. Part internally matched both on input and output. Gps ηD EVM SR1 SR2 Gps ηD IRL P1dB — — — — — — — — — 15 35 2 - 63 - 76 14.5 49 - 12 110 — — — — — — — — — dB % % rms dBc dBc dB % dB W Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805 - 1880 MHz MRF6S18100NR1 MRF6S18100NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS + R2 C1 C2 Z6 Z13 RF INPUT R3 Z1 C6 C7 C8 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z11 C10 Z12 RF OUTPUT C3 C4 C5 C14 VSUPPLY DUT Z14 C9 VSUPPLY C11 C12 C13 Z1, Z12 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250″ x 0.083″ Microstrip 0.450″ x 0.083″ Microstrip 0.535″ x 0.083″ Microstrip 0.540″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 1.190″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z13, Z14 PCB 0.485″ x 1.000″ Microstrip 0.590″ x 0.083″ Microstrip 0.805″ x 0.083″ Microstrip 0.870″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 *Variable for tuning. Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1930 - 1990 MHz Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz Part C1 C2, C3, C6, C10, C11 C4, C5, C12, C13 C7 C8 C9 C14 R1, R2 R3 Description 100 nF Chip Capacitor 6.8 pF Chip Capacitors 4.7 μF Chip Capacitors 0.3 pF Chip Capacitor 1.3 pF Chip Capacitor 0.5 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 12065C104KAT ATC100B6R8BT500XT C4532X5R1H475MT ATC700B0R3BT500XT ATC100B1R3BT500XT ATC100B0R5BT500XT EKME630ELL471MK25S CRCW12061002FKEA CRCW120610R0FKEA Manufacturer AVX ATC TDK ATC ATC ATC Multicomp Vishay Vishay MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 3 C14 R1 R2 C1 C2 C3 C4 C5 R3 C6 C7 C8 CUT OUT AREA C10 C9 C11 C12 C13 MRF6S18100N Rev. 0 Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1930 - 1990 MHz MRF6S18100NR1 MRF6S18100NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1930 - 1990 MHz 17 ηD ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 IRL 15 Gps 14 VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000 20 2020 −40 30 40 50 −10 60 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) −20 −30 f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts 17 60 0 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 IRL 15 Gps 14 ηD VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000 50 −10 40 −20 30 −30 20 2020 −40 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts 16 IDQ = 1350 mA Gps, POWER GAIN (dB) 1125 mA 900 mA 16 14 15 Gps, POWER GAIN (dB) 12 10 32 V 28 V 14 665 mA 13 450 mA 12 VDD = 28 Vdc f = 1960 MHz 11 1 10 Pout, OUTPUT POWER (WATTS) 100 8 6 4 2 0 20 40 60 80 100 120 140 160 Pout, OUTPUT POWER (WATTS) CW IDQ = 900 mA f = 1960 MHz VDD = 24 V Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 1930 - 1990 MHz EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz Gps −30_C 25_C 85_C 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) CW 100 20 10 0 5 TC = −30_C ηD 25_C 50 85_C 40 30 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 700 mA 4 Pout = 61 W Avg. 18 Gps, POWER GAIN (dB) 16 14 3 44 W Avg. 2 20 W Avg. 1 0 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) Figure 7. Power Gain and Drain Efficiency versus CW Output Power SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) Figure 8. EVM versus Frequency 12 EVM, ERROR VECTOR MAGNITUDE (% rms) 10 8 6 4 2 0 1 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation 60 TC = −30_C 50 40 25_C 30 20 10 0 100 −50 −55 −60 −65 SR @ 400 kHz Pout = 61 W Avg. 44 W Avg. ηD 20 W Avg. −70 −75 −80 −85 1900 44 W Avg. 1920 1940 1960 20 W Avg. 1980 SR @ 600 kHz 61 W Avg. 85_C EVM VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation 10 Pout, OUTPUT POWER (WATTS) AVG. 2000 2020 f, FREQUENCY (MHz) Figure 9. EVM and Drain Efficiency versus Output Power Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −40 SPECTRAL REGROWTH @ 400 kHz (dBc) −45 −50 25_C −55 −60 −65 −70 −75 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) TC = −30_C SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation 85_C −55 −60 −65 25_C −70 −75 −80 −85 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation TC = −30_C 85_C Figure 11. Spectral Regrowth at 400 kHz versus Output Power MRF6S18100NR1 MRF6S18100NBR1 6 Figure 12. Spectral Regrowth at 600 kHz versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 107 MTTF (HOURS) 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 100 W, and ηD = 49%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature GSM TEST SIGNAL −10 −20 −30 −40 −50 (dB) −60 −70 −80 −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz Figure 14. EDGE Spectrum MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω f = 2020 MHz f = 2020 MHz Zload Zsource f = 1900 MHz f = 1900 MHz VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz 1900 1930 1960 1990 2020 Zsource W 2.80 - j4.53 2.71 - j4.27 2.63 - j4.03 2.56 - j3.79 2.51 - j3.57 Zload W 1.75 - j3.52 1.67 - j3.25 1.59 - j2.99 1.52 - j2.74 1.47 - j2.51 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance — 1930 - 1990 MHz MRF6S18100NR1 MRF6S18100NBR1 8 RF Device Data Freescale Semiconductor R1 VBIAS + R2 C1 C2 Z6 Z14 RF INPUT R3 Z1 C6 C7 C8 C9 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z11 Z12 C13 Z13 RF OUTPUT C3 C4 C5 C17 VSUPPLY DUT Z15 C10 C11 C12 VSUPPLY C14 C15 C16 Z1, Z13 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250″ x 0.083″ Microstrip 0.620″ x 0.083″ Microstrip 0.715″ x 0.083″ Microstrip 0.190″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 1.190″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z12* Z14, Z15 PCB 0.485″ x 1.000″ Microstrip 0.080″ x 0.083″ Microstrip 0.340″ x 0.083″ Microstrip 0.975″ x 0.083″ Microstrip 0.960″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 *Variable for tuning. Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1805 - 1880 MHz Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1805 - 1880 MHz Part C1 C2, C3, C6, C13, C14 C4, C5, C15, C16 C7, C8, C11, C12 C9 C10 C17 R1, R2 R3 Description 100 nF Chip Capacitor 8.2 pF Chip Capacitors 4.7 μF Chip Capacitors 0.2 pF Chip Capacitors 1 pF Chip Capacitor 0.5 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 12065C104KAT ATC100B8R2BT500XT C4532X5R1H475MT ATC700B0R2BT500XT ATC100B1R0BT500XT ATC100B0R5BT500XT EKME630ELL471MK25S CRCW12061002FKEA CRCW120610R0FKEA Manufacturer AVX ATC TDK ATC ATC ATC Multicomp Vishay Vishay MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 9 C17 R1 R2 C1 C2 C3 C4 C5 R3 C6 CUT OUT AREA C7 C8 C9 C10 C13 C11 C12 C14 C15 C16 MRF6S18100N Rev. 0 Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1805 - 1880 MHz MRF6S18100NR1 MRF6S18100NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1805 - 1880 MHz 17 ηD 16 Gps, POWER GAIN (dB) 50 ηD, DRAIN EFFICIENCY (%) 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 60 15 Gps 40 −10 14 IRL 30 −20 13 VDD = 28 Vdc IDQ = 900 mA 12 1800 1810 1820 1830 1840 1850 1860 1870 20 10 1880 −30 −40 f, FREQUENCY (MHz) Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts 16 IRL Gps 50 −10 15 ηD 40 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) −20 14 VDD = 28 Vdc IDQ = 900 mA 13 1800 1810 1820 1830 1840 1850 1860 30 −30 20 1870 1880 −40 f, FREQUENCY (MHz) Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts 6 EVM, ERROR VECTOR MAGNITUDE (% rms) EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 28 Vdc IDQ = 700 mA 5 Pout = 60 W Avg. 4 10 VDD = 28 Vdc IDQ = 700 mA f = 1840 MHz EDGE Modulation 50 6 ηD 4 TC = 25_C 30 3 42 W Avg. 2 25 W Avg. 1820 1840 1860 1880 1900 20 2 0 1 10 EVM 10 0 100 1 1800 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG. Figure 20. EVM versus Frequency Figure 21. EVM and Drain Efficiency versus Output Power MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor ηD, DRAIN EFFICIENCY (%) 8 40 11 TYPICAL CHARACTERISTICS — 1805 - 1880 MHZ SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) −45 −50 −55 −60 −65 −70 −75 −80 −85 1780 25 W Avg. 1800 1820 1840 1860 1880 1900 1920 SR @ 600 kHz 25 W Avg. 60 W Avg. 42 W Avg. VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz SR @ 400 kHz Pout = 60 W Avg. 42 W Avg. f, FREQUENCY (MHz) Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −45 SPECTRAL REGROWTH @ 400 kHz (dBc) −50 −55 −60 −65 −70 −75 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) TC = 25_C SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation −60 VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation −65 −70 TC = 25_C −75 −80 −85 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) Figure 23. Spectral Regrowth at 400 kHz versus Output Power Figure 24. Spectral Regrowth at 600 kHz versus Output Power MRF6S18100NR1 MRF6S18100NBR1 12 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 1900 MHz Zload f = 1780 MHz f = 1900 MHz Zsource f = 1780 MHz VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz 1780 1804 1840 1880 1900 Zsource W 1.96 - j4.09 1.90 - j3.86 1.82 - j3.53 1.76 - j3.16 1.72 - j2.97 Zload W 1.94 - j2.90 1.88 - j2.67 1.80 - j2.42 1.73 - j1.99 1.70 - j1.82 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 25. Series Equivalent Source and Load Impedance — 1805 - 1880 MHz MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MRF6S18100NR1 MRF6S18100NBR1 14 RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 15 MRF6S18100NR1 MRF6S18100NBR1 16 RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 17 MRF6S18100NR1 MRF6S18100NBR1 18 RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 2 Date Dec. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for standardization across products, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 6, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 5 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 14 - 16. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 17 - 19. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 20 MRF6S18100NR1 MRF6S18100NBR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005 - 2006, 2008. All rights reserved. MRF6S18100NR1 MRF6S18100NBR1 Document Number: RF Device Data MRF6S18100N Rev. 2, 12/2008 Freescale Semiconductor 21