DSA300I200NA

DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.91 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a DSA300I200NA preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 200 V TVJ = 25°C 3 mA VR = 200 V TVJ = 150°C 30 mA I F = 300 A TVJ = 25°C 1.03 V 1.29 V 0.91 V I F = 600 A TVJ = 125°C I F = 300 A I F = 600 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 95°C rectangular 1.22 V T VJ = 150 °C 300 A TVJ = 150 °C 0.57 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 1.03 mΩ 0.15 K/W K/W 0.10 TC = 25°C 24 V f = 1 MHz 2.22 Data according to IEC 60747and per semiconductor unless otherwise specified 830 W 4.80 kA nF 20120907a DSA300I200NA preliminary Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 °C -40 150 °C 1) Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL abcde YYWW Z 1.1 1.5 Nm Nm 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part number Product Marking Logo 1.5 10.5 t = 1 second t = 1 minute 1.1 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g D S A 300 I 200 NA Part No. XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] SOT-227B (minibloc) Assembly Code DateCode Assembly Line Ordering Standard Part Number DSA300I200NA Similar Part DSA300I45NA DSA300I100NA Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA300I200NA Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 511258 Voltage class 45 100 T VJ = 150°C Schottky V 0 max threshold voltage 0.57 V R 0 max slope resistance * 0.21 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a DSA300I200NA preliminary Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a DSA300I200NA preliminary Schottky 600 500 400 IF 300 TVJ = 25°C 125°C 150°C [A] 200 100 0 0.4 0.8 1.2 VF [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 350 dc = 1 0.5 0.4 0.33 0.17 0.08 250 200 150 P(AV) RthHA 0.2 0.4 0.6 0.8 1.0 2.0 300 250 IF(AV) dc = 1 0.5 0.4 0.33 0.17 0.08 200 [A] 100 [W] 150 100 50 50 0 0 0 50 100 150 200 IF(AV) [A] 250 0 40 80 120 160 0 40 80 120 160 TC [°C] Tamb [°C] Fig. 5 Average forward current IF(AV) vs. case temp. TC Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature 0.16 0.12 Rthi [K/W] 0.017 0.013 0.02 0.05 0.05 ZthJC 0.08 [K/W] ti [s] 0.01 0.00001 0.01 0.045 0.3 0.04 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a