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NGB8202ANT4G

NGB8202ANT4G

  • 厂商:

    HAMLIN(力特)

  • 封装:

    SOT404

  • 描述:

    IGBT 440V 20A 150W Surface Mount D2PAK

  • 数据手册
  • 价格&库存
NGB8202ANT4G 数据手册
Ignition IGBT Surface Mount > 400V > NGB8202AN NGB8202AN - 20 A, 400 V, N-Channel Ignition IGBT, D2PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over− Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection 20 Amps, 400 Volts VCE (on) ≤ 1.3 V @ IC = 10 A, VGE ≥ 4.5 V • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability Maximum Ratings (TJ = 25°C unless otherwise noted) • These are Pb−Free Devices Rating Applications Symbol Value Unit Collector−Emitter Voltage VCES 440 V Collector−Gate Voltage VCER 440 V Gate−Emitter Voltage VGE ±15 V 20 ADC 50 AAC Collector Current−Continuous @ TC = 25°C − Pulsed IC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 500 V 150 Watts 1.0 W/°C −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range PD TJ, Tstg • Ignition Systems Functional Diagram Additional Information Datasheet Resources Samples Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8202AN Unclamped Collector−To−Emitter Avalanche Characteristics (−55° ≤ TJ ≤ 175°C) Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 25°C 250 VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 150°C 200 EAS VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 175°C mJ 180 Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) 2000 mJ Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.0 °C/W Thermal Resistance, Junction to Ambient (Note 1) RθJA 62.5 °C/W TL 275 °C Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8202AN Electrical Characteristics - OFF Characteristic Collector−Emitter Clamp Voltage Symbol BVCES Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 IC = 10 mA TJ = −40°C to 175°C 390 415 440 TJ = 25°C _ 0.1 1.0 TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = -40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = -40°C 30 33 37 TJ = 25°C 0.05 0.2 1.0 TJ = 175°C 1.0 8.5 25 TJ = −40°C 0.005 0.025 0.2 VGE = 0 V, VCE = 15 V Zero Gate Voltage Collector Current ICES VCE = 200V VGE = 0 V Reverse Collector−Emitter Clamp Voltage Reverse Collector−Emitter Leakage Current BVCES(R) ICES(R) IC = −75 mA VCE = −24 V Unit V µA V mA Gate−Emitter Clamp Voltage BVGES IG = ±5.0 mA TJ = −40°C to 175°C 12 12.5 14 V Gate−Emitter Leakage Current IGES VGE = ±5.0 V TJ = −40°C to 175°C 200 300 350* µA Gate Resistor RG _ TJ = −40°C to 175°C - 70 - Ω Gate Emitter Resistor RGE _ TJ = −40°C to 175°C 14.25 16 25 kΩ Unit Electrical Characteristics - ON (Note 3) Characteristic Gate Threshold Voltage Symbol VGE(th) Test Conditions IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) − − Temperature Min Typ Max TJ = 25°C 1.5 1.8 2.1 TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* − 4.0 4.6 5.2 *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 V mV/°C Ignition IGBT Surface Mount > 400V > NGB8202AN Electrical Characteristics - ON (Note 4) Characteristic Symbol Test Conditions IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V Collector−to−Emitter On−Voltage VCE (on) IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V IC = 20 A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A Temperature Min Typ Max TJ = 25°C 0.85 1.03 1.35 TJ = 175°C 0.7 0.9 1.15 TJ = −40°C 0 1.11 1.4 TJ = 25°C 0.9 1.11 1.45 TJ = 175°C 0.8 1.01 1.25 TJ = −40°C 1.0 1.18 1.5 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* TJ = 25°C 1.1 1.4 1.9 TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.3 1.42 2.0 TJ = 25°C 10 18 25 Unit V © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Mhos Ignition IGBT Surface Mount > 400V > NGB8202AN Dynamic Characteristics Characteristic Symbol Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS Test Conditions VCE = 25 V f = 10 kHZ Temperature TJ = 25°C Min Typ Max 1100 1300 1500 70 80 90 18 20 22 Unit pF Switching Characteristics Characteristic Turn−Off Delay Time (Resistive) Symbol td (off) Test Conditions Temperature Min Typ Max TJ = 25°C 6.0 8.0 10 TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 Unit VCC = 300 V, IC = 9 A RG = 1.0 kΩ, RL = 33 Ω, Fall Time (Resistive) Turn−Off Delay Time (Inductive) tf td (off) VGE = 5.0 V VCC = 300 V, IC = 9 A µSec RG = 1.0 kΩ, L = 300 µH, Fall Time (Inductive) Turn−On Delay Time tf td (on) TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 VGE = 5.0 V VCC = 14 V, IC = 9.0 A RG = 1.0 kΩ, RL = 1.5 Ω, Rise Time tr VGE = 5.0 V 4. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. *Maximum Value of Characteristic across Temperature Range. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8202AN Ratings and Characteristic Curves Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current vs. Temperature Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8202AN Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature COLLECTOR TO EMITTER LEAKAGE CURRENT ( A) 10000 1000 VCE 100 10 VCE = 200 V 1.0 0.1 05 25 0 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage Figure 11. Resistive Switching Fall Time vs.Temperature Figure 12. Inductive Switching Fall Time vs.Temperature 12 12 10 tfall 8 SWITCHING TIME ( s) SWITCHING TIME ( s) 10 tdelay 6 VCC = 300 V VGE = 5.0 V R G = 1000 IC = 9.0 A R L = 33 4 2 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V R G = 1000 IC = 9.0 A L = 300µH 4 2 175 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 175 Ignition IGBT Surface Mount > 400V > NGB8202AN R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 100 Duty Cycle = 0.5 0.2 10 0.1 1 0.02 0.05 0.01 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P (pk) t1 t2 Single Pulse 0.01 0.000001 DUTY CYCLE, D = t 1/t2 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) A = P (pk) R JA(t) R(t) for t ≤ 0.1 s For D=1: R JC 11 0 1001 000 t,TIME (S) R JC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) 1 Duty Cycle = 0.5 0.2 0.1 0.1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P (pk) 0.05 t1 0.02 t2 0.01 0.01 0.000001 Single Pulse 0.00001 TJ(pk) A= P (pk) R JC(t) DUTY CYCLE, D = t 1/t2 0.0001 0.001 0.01 0.1 1 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8202AN Soldering Footrpint Dimensions 10.49 8.38 16.155 2X 3.504 B 2X 1.016 M 5.080 PITCH DIMENSIONS: MILLIMETERS K Part Marking System 4 Collector L F GB 8202xxG AYWW Dim Inches Min Max Min A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 Max C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 1 Gate Millimeters 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. 3 Emitter 2 Collector GB8202xx = Device Code xx = AN A= Assembly Location Y= Year WW = Work Week ORDERING INFORMATION Device NGB8202ANT4G NGB8202ANTF4G Package D2PAK (Pb-Free) Shipping 800 / Tape & Reel 700 / Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18
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