NGB8204ANT4G

Ignition IGBT Surface Mount > 400V > NGB8204AN NGB8204AN - 18 A, 400 V, N-Channel Ignition IGBT, D2PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over− Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load 18 Amps, 400 Volts VCE(on) ≤ 2.0 V @ IC = 10A, VGE ≥ 4.5 V • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Maximum Ratings (TJ = 25°C unless otherwise noted) Rating • Low Saturation Voltage Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage VCER 430 VDC • High Pulsed Current Capability • Integrated Gate−Emitter Resistor (RGE) • Emitter Ballasting for Short−Circuit Capability • These are Pb−Free Devices Functional Diagram Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VGE IC 18 VDC 18 ADC 50 AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V 115 Watts 0.77 W/°C −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range PD TJ, Tstg Additional Information Datasheet Resources Samples Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Unclamped Collector−To−Emitter Avalanche Characteristics (−55°≤TJ ≤175°C) Rating Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C 400 EAS mJ VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C 400 Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) 2000 mJ Symbol Value Unit Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) tsc1 750 µs Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc2 5.0 ms Maximum Short-Circuit Times (−55°C ≤ TJ ≤ 150°C) Thermal Characteristics Rating Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D2PAK (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds Symbol Value Unit RθJC 1.3 °C/W RθJA 50 °C/W TL 275 °C 1. When surface mounted to an FR4 board using the minimum recommended pad size. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Electrical Characteristics - OFF Characteristic Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Clamp Voltage Reverse Collector−Emitter Leakage Current Symbol Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = −40°C to 150°C 370 395 420 IC = 10 mA TJ = −40°C to 150°C 390 415 440 TJ = 25°C − 2.0 10 TJ = 150°C − 10 40* TJ = -40°C − 1.0 10 TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 BVCES ICES BVCES(R ICES(R) VCE = 200V VGE = 0 V IC = −75 mA VCE = −24 V Unit VDC µADC VDC mA Gate−Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC Gate−Emitter Leakage Current IGES VGE = 10 V TJ = −40°C to 150°C 384 640 700 µADC Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Electrical Characteristics - ON (Note 3) Characteristic Symbol IC = 1.0 mA, VGE(th) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Test Conditions VGE = VCE − − IC = 6.0 A, VGE = 4.0 V IC = 8.0 A, VGE = 4.0 V Collector−to−Emitter On−Voltage VCE (on) IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A Temperature Min Typ Max TJ = 25°C 1.1 1.4 1.9 TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − 3.4 − TJ = 25°C 1.0 1.4 1.6 TJ = 150°C 0.9 1.3 1.6 TJ = −40°C 1.1 1.45 1.7* TJ = 25°C 1.3 1.6 1.9* TJ = 150°C 1.2 1.55 1.8 TJ = −40°C 1.4 1.6 1.9* TJ = 25°C 1.4 1.8 2.0 TJ = 150°C 1.5 1.8 2.0 TJ = −40°C 1.4 1.8 2.1* TJ = 25°C 1.8 2.2 2.5 TJ = 150°C 2.0 2.4 2.6* TJ = −40°C 1.7 2.1 2.5 TJ = 25°C 1.3 1.8 2.0* TJ = 150°C 1.3 1.75 2.0* TJ = −40°C 1.4 1.8 2.0* TJ = −40°C to 150°C 8.0 14 25 Unit VDC mV/°C VDC Mhos *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. Dynamic Characteristics Characteristic Symbol Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS Test Conditions VCC = 25 V VGE = 0 V f = 1.0 MHz Temperature TJ = −40°C to 150°C Min Typ Max 400 800 1000 50 75 100 4.0 7.0 10 © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Unit pF Ignition IGBT Surface Mount > 400V > NGB8204AN Switching Characteristics Characteristic Symbol Turn−Off Delay Time (Resistive) td (off) Fall Time (Resistive) tf Turn−On Delay Time td (on) Rise Time tr Test Conditions VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω, Temperature Min Typ Max TJ = 25°C − 4.0 10 TJ = 25°C − 9.0 15 TJ = 25°C − 0.7 4.0 TJ = 25°C − 4.5 7.0 Unit µSec Ratings and Characteristic Curves Figure 1. Output Characteristics Figure 2. Output Characteristics Figure 3. Output Characteristics Figure 4. Transfer Characteristics © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Ratings and Characteristic Curves Figure 5. Collector−to−Emitter Saturation Voltage vs Junction Temperature Figure 6. Collector−to−Emitter Voltage vs Gate−to−Emitter Voltage Figure 7. Collector−to−Emitter Voltage vs Gate−to−Emitter Voltage Figure 8. Capacitance Variation Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current vs. Temperature © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Figure 11. Typical Open Secondary Latch Current vs. Temperature Figure 12. Inductive Switching Fall Time vs.Temperature Figure 13. Single Pulse Safe Operating Area Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 25°C) (Mounted on an Infinite Heatsink at TA = 125°C) Figure 15. Pulse Train Safe Operating Area Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25°C) (Mounted on an Infinite Heatsink at TC = 125°C) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 400V > NGB8204AN Soldering Footrpint Dimensions C E V W A K J W H Part Marking System 4 Collector GB 8204xG 8204AG AYWW Dim Inches Min Max Min Max A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 1 Gate Millimeters 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. GB8204x= A= Y= WW G= 3 Emitter 2 Collector Device Code Assembly Location Year = Work Week Pb Free Package ORDERING INFORMATION Device Package Shipping† NGB8204ANT4G D2PAK (Pb−Free) 800 / Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18