NGB8204N

NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com 18 AMPS, 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • • • Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability Pb−Free Package is Available G RGE E D2PAK CASE 418B STYLE 4 1 MARKING DIAGRAM 4 Collector GB 8204NG AYWW 1 Gate GB8204N A Y WW G 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = Pb−Free Package MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD ESD PD TJ, Tstg Value 430 430 18 18 50 8.0 800 115 0.77 −55 to +175 Unit VDC VDC VDC ADC AAC kV V W W/°C °C ORDERING INFORMATION Device NGB8204NT4 NGB8204NT4G Package D2PAK D2PAK (Pb−Free) Shipping † 800 / Tape & Reel 800 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: NGB8204N/D NGB8204N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C) Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc1 tsc2 750 5.0 ms ms Symbol EAS Value 400 300 2000 Unit mJ EAS(R) mJ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient D2PAK (Note 1) Symbol RqJC RqJA TL Value 1.3 50 275 Unit °C/W °C/W °C Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES ICES VCE = 350 V, VGE = 0 V Reverse Collector−Emitter Leakage Current IECS VCE = −24 V BVCES(R) IC = −75 mA BVGES IGES RGE VGE(th) IG = 5.0 mA VGE = 10 V − IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current TJ = −40°C to 150°C TJ = −40°C to 150°C TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C TJ = 150°C TJ = −40°C Reverse Collector−Emitter Clamp Voltage TJ = 25°C TJ = 150°C TJ = −40°C Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1.0 mA, VGE = VCE − TJ = 25°C TJ = 150°C TJ = −40°C Threshold Temperature Coefficient (Negative) − − 1.1 0.75 1.2 − 1.4 1.0 1.6 3.4 1.9 1.4 2.1* − mV/°C VDC TJ = −40°C to 150°C TJ = −40°C to 150°C TJ = −40°C to 150°C 380 390 − − − − − − 27 30 25 11 384 10 395 405 2.0 10 1.0 0.7 12 0.1 33 36 32 13 640 16 420 430 10 40* 10 1.0 25* 1.0 37 40 35 15 700 26 VDC mADC kW Symbol Test Conditions Temperature Min Typ Max Unit VDC mADC mA VDC *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 NGB8204N ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C TJ = 150°C TJ = −40°C TJ = 25°C TJ = 150°C TJ = −40°C TJ = −40°C to 150°C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.8 2.0 1.7 1.3 1.3 1.4 8.0 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 14 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.0 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* 25 Mhos VDC Symbol Test Conditions Temperature Min Typ Max Unit IC = 8.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay Time td(off) tf td(on) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W CISS COSS CRSS VCC = 25 V, VGE = 0 V f = 1.0 MHz gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 400 50 4.0 800 75 7.0 4.0 9.0 0.7 1000 100 10 10 15 4.0 pF TJ = 25°C TJ = 25°C TJ = 25°C − − − mSec mSec Rise Time tr TJ = 25°C − 4.5 7.0 *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 NGB8204N TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 50 40 30 20 3V 10 0 2.5 V 0 1 3 5 7 2 4 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 TJ = 25°C 60 50 4.5 V 40 TJ = −40°C 30 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4V 3.5 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 5V 4.5 V 4V 3.5 V VGE = 10 V 5V Figure 1. Output Characteristics Figure 2. Output Characteristics IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 5V IC, COLLECTOR CURRENT (AMPS) 60 50 40 TJ = 150°C 30 20 10 0 60 55 50 45 40 35 30 25 20 15 10 5 0 TJ = 25°C VCE = 10 V TJ = −40°C TJ = 150°C 4.5 V 4V 3.5 V 3V 2.5 V 0 2 4 6 1 3 5 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 0 1 2 3 4 5 6 7 8 VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 VGE = 5 V IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 5 A 3 2.5 Figure 4. Transfer Characteristics COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25°C IC = 15 A 2 1.5 1 0.5 0 IC = 10 A IC = 5 A 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (°C) GATE−TO−EMITTER VOLTAGE (V) Figure 5. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage http://onsemi.com 4 NGB8204N 3 COLLECTOR TO EMITTER VOLTAGE (V) 2.5 2 1.5 1 0.5 0 IC = 15 A IC = 10 A IC = 5 A TJ = 150°C 10000 1000 100 10 1 0 3 4 5 6 7 8 9 10 GATE TO EMITTER VOLTAGE (V) Ciss C, CAPACITANCE (pF) Coss Crss 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8. Capacitance Variation 2 GATE THRESHOLD VOLTAGE (V) IL, LATCH CURRENT (AMPS) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −50 −30 −10 10 30 50 70 90 110 130 150 VTH + 4 s VTH − 4 s VTH 30 25 20 15 10 5 0 −50 −25 L = 2 mH VCC = 50 V VGE = 5.0 V RG = 1000 W L = 3 mH L = 6 mH 0 25 50 75 100 125 150 175 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current versus Temperature 30 IL, LATCH CURRENT (AMPS) 25 L = 2 mH 20 15 10 5 0 −50 −25 L = 3 mH L = 6 mH VCC = 50 V VGE = 5.0 V RG = 1000 W 12 10 SWITCHING TIME (ms) 8 6 td(off) 4 2 0 −50 −30 −10 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf 0 25 50 75 100 125 150 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 5 NGB8204N 100 COLLECTOR CURRENT (AMPS) DC 10 100 ms 1 1 ms 10 ms 0.1 100 ms COLLECTOR CURRENT (AMPS) 100 10 DC 1 100 ms 1 ms 10 ms 0.1 100 ms 0.01 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (V) 0.01 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 100 t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 10 1 0.1 0.1 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (V) COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 6 NGB8204N VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN RG = 1 kW VIN RG = 1 kW RS = 55 mW Figure 17. Circuit Configuration for Short Circuit Test #1 Figure 18. Circuit Configuration for Short Circuit Test #2 100 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 10 1 0.01 0.1 0.01 P(pk) Single Pulse t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) RqJC @ R(t) for t ≤ 0.2 s 0.001 0.0001 0.00001 0.0001 0.001 t,TIME (S) 0.01 0.1 1 Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) http://onsemi.com 7 NGB8204N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E − B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) P H M J W TB M U L M STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 8.38 0.33 F VIEW W−W 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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