NGB8204NT4G

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 18 AMPS, 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V Features • Ideal for Coil−on−Plug Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • • • Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated Gate−Emitter Resistor (RGE) Emitter Ballasting for Short−Circuit Capability These are Pb−Free Devices C G RGE E D2PAK CASE 418B STYLE 4 1 MARKING DIAGRAM 4 Collector MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating GB 8204xG AYWW Symbol Value Unit Collector−Emitter Voltage VCES 430 VDC Collector−Gate Voltage VCER 430 VDC Gate−Emitter Voltage VGE 18 VDC 1 Gate IC 18 50 ADC AAC GB8204x Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 800 V PD 115 0.77 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range kV 8.0 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A Y WW G 3 Emitter 2 Collector = Device Code x = N or A = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NGB8204NT4G D2PAK 800 / Tape & Reel (Pb−Free) NGB8204ANT4G D2PAK (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 December, 2011 − Rev. 4 1 Publication Order Number: NGB8204N/D NGB8204N, NGB8204AN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Symbol Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125°C EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) Value Unit mJ 400 300 mJ 2000 MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ TJ ≤ 150°C) Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) tsc1 750 ms Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc2 5.0 ms Symbol Value Unit RqJC 1.3 °C/W RqJA 50 °C/W TL 275 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case D2PAK Thermal Resistance, Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 150°C 380 395 420 VDC IC = 10 mA TJ = −40°C to 150°C 390 405 430 TJ = 25°C − 2.0 10 VCE = 350 V, VGE = 0 V TJ = 150°C − 10 40* TJ = −40°C − 1.0 10 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25* TJ = −40°C − 0.1 1.0 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage Gate−Emitter Clamp Voltage ICES IECS VCE = −24 V BVCES(R) IC = −75 mA TJ = 25°C 27 33 37 TJ = 150°C 30 36 40 TJ = −40°C 25 32 35 mADC mA VDC BVGES IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC Gate−Emitter Leakage Current IGES VGE = 10 V TJ = −40°C to 150°C 384 640 700 mADC Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kW TJ = 25°C 1.1 1.4 1.9 VDC TJ = 150°C 0.75 1.0 1.4 TJ = −40°C 1.2 1.6 2.1* − − 3.4 − ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Threshold Temperature Coefficient (Negative) VGE(th) IC = 1.0 mA, VGE = VCE − − *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 mV/°C NGB8204N, NGB8204AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.0 1.4 1.6 IC = 6.0 A, VGE = 4.0 V VDC TJ = 150°C 0.9 1.3 1.6 TJ = −40°C 1.1 1.45 1.7* TJ = 25°C 1.3 1.6 1.9* IC = 8.0 A, VGE = 4.0 V TJ = 150°C 1.2 1.55 1.8 TJ = −40°C 1.4 1.6 1.9* TJ = 25°C 1.4 1.8 2.0 TJ = 150°C 1.5 1.8 2.0 TJ = −40°C 1.4 1.8 2.1* TJ = 25°C 1.8 2.2 2.5 TJ = 150°C 2.0 2.4 2.6* TJ = −40°C 1.7 2.1 2.5 ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V Forward Transconductance gfs TJ = 25°C 1.3 1.8 2.0* IC = 10 A, VGE = 4.5 V TJ = 150°C 1.3 1.75 2.0* TJ = −40°C 1.4 1.8 2.0* VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 14 25 Mhos VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C 400 800 1000 pF 50 75 100 4.0 7.0 10 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 4.0 10 Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, TJ = 25°C − 9.0 15 Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 0.7 4.0 tr VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25°C − 4.5 7.0 Rise Time *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec mSec NGB8204N, NGB8204AN 60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) VGE = 10 V 50 5V 4.5 V 40 30 4V TJ = 25°C 3.5 V 20 3V 10 0 2.5 V 0 1 3 5 7 2 4 6 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 4.5 V 40 30 3.5 V 20 3V 10 2.5 V 1 3 5 7 8 2 4 6 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 0 VGE = 10 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 2. Output Characteristics 60 60 50 5V 40 TJ = 150°C 4.5 V 30 4V 20 3.5 V 3V 10 2.5 V 0 2 4 6 1 3 5 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 55 VCE = 10 V 50 45 40 35 30 TJ = 25°C 25 20 15 10 5 0 8 0 IC = 25 A 3.0 IC = 20 A 2.5 IC = 15 A 2.0 IC = 10 A 1.5 IC = 5 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 2 3 4 5 6 7 8 Figure 4. Transfer Characteristics COLLECTOR TO EMITTER VOLTAGE (V) VGE = 5 V 1 VGE, GATE TO EMITTER VOLTAGE (VOLTS) 4.0 3.5 TJ = 150°C TJ = −40°C Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4V TJ = −40°C Figure 1. Output Characteristics 0 5V 50 0 8 VGE = 10 V 125 150 3 TJ = 25°C 2.5 IC = 15 A 2 IC = 10 A 1.5 IC = 5 A 1 0.5 0 3 TJ, JUNCTION TEMPERATURE (°C) 4 5 6 7 8 9 GATE−TO−EMITTER VOLTAGE (V) Figure 5. Collector−to−Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage http://onsemi.com 4 10 NGB8204N, NGB8204AN 10000 2.5 TJ = 150°C IC = 15 A 2 IC = 10 A 1.5 1000 Ciss 100 Coss 10 Crss C, CAPACITANCE (pF) COLLECTOR TO EMITTER VOLTAGE (V) 3 IC = 5 A 1 0.5 0 0 3 4 5 6 7 8 10 9 40 60 80 100 120 140 160 180 200 Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage Figure 8. Capacitance Variation 30 VTH + 4 s 1.6 IL, LATCH CURRENT (AMPS) GATE THRESHOLD VOLTAGE (V) 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.8 1.4 0 GATE TO EMITTER VOLTAGE (V) 2 VTH VTH − 4 s 1.2 1 0.8 0.6 0.4 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 2 mH 20 15 L = 3 mH 10 L = 6 mH 5 0.2 0 −50 −30 −10 10 30 50 70 90 0 −50 −25 110 130 150 0 25 50 75 100 125 150 175 TEMPERATURE (°C) TEMPERATURE (°C) Figure 9. Gate Threshold Voltage versus Temperature Figure 10. Minimum Open Secondary Latch Current versus Temperature 12 30 VCC = 50 V VGE = 5.0 V RG = 1000 W 25 L = 2 mH 20 10 SWITCHING TIME (ms) IL, LATCH CURRENT (AMPS) 1 L = 3 mH 15 L = 6 mH 10 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A L = 300 mH tf 6 td(off) 4 2 5 0 −50 −25 0 25 50 75 100 125 150 0 −50 −30 −10 175 10 30 50 70 90 110 130 150 TEMPERATURE (°C) TEMPERATURE (°C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 5 NGB8204N, NGB8204AN 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 ms 1 ms 1 10 ms 100 ms 0.1 0.01 100 10 100 100 ms 0.1 1000 100 ms 1 1 ms 10 ms 100 1000 COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 1 10 COLLECTOR−EMITTER VOLTAGE (V) COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 1 0.01 1 0.01 10 DC 10 100 t1 = 1 ms, D = 0.05 t1 = 3 ms, D = 0.30 1 0.1 0.01 1000 t1 = 2 ms, D = 0.10 10 1 10 100 1000 COLLECTOR−EMITTER VOLTAGE (V) COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 6 NGB8204N, NGB8204AN VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V VIN 5.0 V RG = 1 kW VIN RG = 1 kW RS = 55 mW Figure 17. Circuit Configuration for Short Circuit Test #1 R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 100 Figure 18. Circuit Configuration for Short Circuit Test #2 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) Single Pulse t1 0.001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.00001 0.0001 0.001 TJ(pk) − TA = P(pk) RqJA(t) RqJC @ R(t) for t ≤ 0.2 s 0.01 t,TIME (S) Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) http://onsemi.com 7 0.1 1 NGB8204N, NGB8204AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D DIM A B C D E F G H J K L M N P R S V W H 3 PL 0.13 (0.005) M T B M P INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR U L SOLDERING FOOTPRINT* M 8.38 0.33 F VIEW W−W 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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