NGB8207NT4G

NGB8207N Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • • Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy − 500 mJ Gate Resistor (RG) = 70 W This is a Pb−Free Device 20 AMPS 365 VOLTS VCE(on) = 1.5 V Typ @ IC = 10 A, VGE . 4.5 V C G RG RGE E D2PAK CASE 418B STYLE 4 Applications • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) ESD (Charged−Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C (Note 1) Operating & Storage Temperature Range Symbol VCES VGE IC IG IG ESD ESD 8.0 ESD PD TJ, Tstg 500 165 1.1 −55 to +175 V W W/°C °C Value 365 $15 20 50 1.0 20 2.0 Unit V V ADC AAC mA mA kV kV 1 Gate 1 MARKING DIAGRAM 4 Collector NGB 8207NG AYWW 3 Emitter 2 Collector NGB8207N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Assuming infinite heatsink Case−to−Ambient ORDERING INFORMATION Device NGB8207NT4G Package D2PAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Shipping† 800 / Tape & Reel © Semiconductor Components Industries, LLC, 2007 1 January, 2007 − Rev. 0 Publication Order Number: NGB8207N/D NGB8207N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25°C VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note 2) Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3) 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 0.9 50 275 °C/W °C/W °C Symbol EAS 500 306 EAS(R) 2000 mJ Value Unit mJ ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES VCE = 24 V VGE = 0 V VCE = 250 V VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = 25°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V IG = $5.0 mA VGE = $10 V TJ = 25°C TJ = 175°C TJ = −40°C Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Resistor Gate−Emitter Resistor ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) IC = 1.0 mA VGE = VCE Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage VCE(on) IC = 6.0 A VGE = 4.0 V IC = 10 mA VGE = 4.5 V *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 25°C TJ = 175°C TJ = −40°C 1.2 0.6 1.4 12 1.0 0.8 1.15 − 1.5 0.8 1.7 12 1.3 1.1 1.4 0.62 2.0 1.2 2.0 12 1.6 1.4 1.75 1.0 mV/°C V V BVGES IGES RG RGE TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C 14.25 − 70 − 30 30 29 0.10 20 − 12 500 325 340 350 365 0.1 1.0 85 0.25 33 36 32 0.25 25 0.03 13 700 70 16 25 375 390 2.0 5 150 2.5 39 42 35 0.85 40 0.3 14.5 1000 V mA W kW mA V mA V Symbol Test Conditions Temperature Min Typ Max Unit http://onsemi.com 2 NGB8207N ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage VCE(on) IC = 8.0 A VGE = 4.0 V TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C IC = 10 A VGE = 3.7 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 10 A VGE = 4.0 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 10 A VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 15 A VGE = 4.0 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 20 A VGE = 4.0 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−On Delay Time (Resistive) Low Voltage Rise Time (Resistive) Low Voltage Turn−Off Delay Time (Resistive) Low Voltage Fall Time (Resistive) Low Voltage Turn−On Delay Time (Resistive) High Voltage Rise Time (Resistive) High Voltage Turn−Off Delay Time (Resistive) High Voltage Fall Time (Resistive) High Voltage td(on) tr td(off) tf td(on) tr td(off) tf VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W TJ = 25°C TJ = 25°C TJ = 25°C TJ = 25°C TJ = 25°C TJ = 25°C TJ = 25°C TJ = 25°C 0.5 2.0 2.0 8.0 0.5 0.7 4.0 6.0 0.55 2.32 2.5 10 0.65 1.8 4.7 10 0.7 2.7 3.0 13 0.75 2.0 6.0 15 mSec CISS COSS CRSS f = 10 kHz VCE = 25 V TJ = 25°C 750 75 4 810 90 7 900 105 12 pF gfs IC = 6.0 A VCE = 5.0 V TJ = 175°C TJ = −40°C TJ = 25°C 1.1 1.0 1.2 1.2 1.1 1.3 1.1 1.1 1.35 1.2 1.1 1.2 1.45 1.6 1.5 1.6 2.0 1.6 − 1.5 1.3 1.5 1.6 1.45 1.7 1.5 1.4 1.7 1.5 1.4 1.6 1.85 1.9 1.9 2.1 2.4 2.1 15.8 1.7 1.6 1.85 1.9 1.8 2.0 1.85 1.75 2.1 1.8 1.7 2.0 2.15 2.4 2.25 2.6 3.1 2.5 − Mhos V Symbol Test Conditions Temperature Min Typ Max Unit *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 NGB8207N TYPICAL ELECTRICAL CHARACTERISTICS 50 45 PEAK CURRENT (A) 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 CLAMPING TIME (mS) 140 mS 25.6 A 660 mJ 175 mS 21 A 675 mJ PEAK CURRENT (A) 70 mS 40 A 510 mJ 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 CLAMPING TIME (mS) 140 mS 16 A 400 mJ 230 mS 9 A 375 mJ 35 mS 39.8 A 250 mJ VCE(on), COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 1. Typical Self Clamped Inductive Switching Performance (SCIS) @ 255C VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) 2.5 3.0 2.5 2.0 1.5 1.0 0.5 Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) @ 1505C 2.0 IC = 20 A IC = 15 A IC = 10 A IC = 6.0 A IC = 8.0 A VGE = 4.0 V @ TJ = −40°C 1.5 VGE = 4.0 V @ TJ = 25°C 1.0 VGE = 4.0 V @ TJ = 175°C 0 2 4 6 8 10 12 14 16 18 20 22 0.5 0 −50 −25 0 25 50 75 100 125 150 175 IC, COLLECTOR (A) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Collector−to−Emitter Voltage vs. Collector Current 60 IC, COLLECTOR CURRENT (A) 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) 4.8 V VGE = 4.5 V IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 Figure 4. Collector−to−Emitter Voltage vs. Junction Temperature VGE = 10 V 5.0 V to 6.5 V VGE = 2.0 V to 4.2 V VGE = 10 V 4.8 V to 6.5 V VGE = 2.0 V to 4.0 V 4.5 V 4.2 V 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 5. On−Region Characteristics @ TJ = 255C http://onsemi.com 4 Figure 6. On−Region Characteristics @ TJ = −405C NGB8207N TYPICAL ELECTRICAL CHARACTERISTICS 60 10 V IC, COLLECTOR CURRENT (A) 50 VGE = 2.2 V to 4.8 V 40 30 20 10 0 0 1 2 3 4 5 6 7 VGE = 2.0 V 8 9 10 VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) 6.5 V 6.0 V 5.5 V IC, COLLECTOR CURRENT (A) 5.0 V 60 VCE ≥ 5.0 V 50 40 30 20 10 0 1.0 2.0 3.0 4.0 5.0 6.0 VGE, GATE−TO−EMITTER VOLTAGE (V) TJ = −40°C TJ = 25°C TJ = 175°C Figure 7. On−Region Characteristics @ TJ = 1755C 100,000 LEAKAGE CURRENT (mA) VGE(th), GATE THRESHOLD VOLTAGE (V) 2.0 Figure 8. Transfer Characteristics MEAN + 4s 1.75 MEAN 1.5 MEAN − 4s 1.25 1.0 0.75 0.5 −50 −25 10,000 VCE = −24 V 1000 100 VCE = 320 V 10 1 −50 −25 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Collector−to−Emitter Leakage Current vs. Temperature 10,000 TJ = 25°C VGE = 0 V C, CAPACITANCE (pF) 1000 Ciss t, TIME (ms) 100 Coss 10 Crss 1 0 20 40 60 80 100 120 140 160 180 200 COLLECTOR−TO−EMITTER VOLTAGE (V) 0.1 25 10 100 Figure 10. Gate Threshold Voltage vs. Temperature VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A tf td(off) tr 1 td(on) 50 75 100 125 150 175 TEMPERATURE (°C) Figure 11. Capacitance Variation Figure 12. Resistive Switching Time Variation vs. Temperature http://onsemi.com 5 NGB8207N TYPICAL ELECTRICAL CHARACTERISTICS 1000 IC, COLLECTOR CURRENT (A) VCC = 300 V IC = 10 A VGE = 5.0 V L = 300 mH RG = 1000 W 100 VGE = 4.0 V Single Pulse TC = 25°C 10 tr t, TIME (mS) 100 td(on) 10 tf td(off) 10 ms 100 ms VCE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 ms 10 ms dc 1 1 25 50 75 100 125 150 175 TEMPERATURE (°C) 0.1 1 Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Inductive Switching Time Variation vs. Temperature 1 Duty Cycle = 0.5 RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 14. Forward Biased Safe Operating Area 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.00001 0.0001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJC(t) 0.01 0.000001 Figure 15. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 NGB8207N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E −B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W A 1 2 3 S −T− SEATING PLANE K G D H 3 PL M W J 0.13 (0.005) TB M P U L M STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 8.38 0.33 F VIEW W−W 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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