NGB8207ANT4G

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • • Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy − 500 mJ Gate Resistor (RG) = 70 W This is a Pb−Free Device http://onsemi.com 20 AMPS, 365 VOLTS VCE(on) = 1.75 V Typ @ IC = 10 A, VGE . 4.5 V C RG G RGE E D2PAK CASE 418B STYLE 4 Applications • Ignition Systems 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 365 V Gate−Emitter Voltage VGE $15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 165 1.1 W W/°C TJ, Tstg −55 to +175 °C Rating Total Power Dissipation @ TC = 25°C Derate above 25°C (Note 1) Operating & Storage Temperature Range kV 8.0 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Assuming infinite heatsink Case−to−Ambient MARKING DIAGRAM 4 Collector NGB 8207AxG AYWW 1 Gate 3 Emitter 2 Collector NGB8207Ax = Device Code x = N or B A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NGB8207ANT4G D2PAK 800 / Tape & Reel (Pb−Free) NGB8207ABNT4G D2PAK 800 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 December, 2011 − Rev. 1 1 Publication Order Number: NGB8207AN/D NGB8207AN, NGB8207ABN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−40° ≤ TJ ≤ 150°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25°C VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125°C Value EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Unit mJ 500 306 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 0.9 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 50 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3) 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 150°C 325 350 375 V IC = 10 mA TJ = −40°C to 150°C 340 365 390 VCE = 24 V VGE = 0 V TJ = 25°C 0.1 2.0 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 250 V VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current TJ = 25°C − 1.0 5 TJ = 150°C − 10 125 TJ = −40°C − 0.25 2.5 TJ = 25°C 25 27 29 TJ = 150°C 25 29 31 TJ = −40°C 24 26 29 TJ = 25°C − 0.5 1.1 TJ = 150°C 20 25 40 TJ = −40°C − 0.03 1.0 mA V mA BVGES IG = $5.0 mA TJ = −40°C to 150°C 12 13 14.5 V IGES VGE = $10 V TJ = −40°C to 150°C 500 700 1000 mA Gate Resistor RG TJ = −40°C to 150°C Gate−Emitter Resistor RGE TJ = −40°C to 150°C 14.25 70 16 25 kW TJ = 25°C 1.2 1.5 2.0 V TJ = 150°C 0.7 1.0 1.3 TJ = −40°C 1.4 1.7 2.0 − 4.0 − mV/°C TJ = 25°C 1.15 1.5 1.75 V IC = 6.0 A VGE = 4.0 V TJ = 150°C 1.2 1.4 1.75 TJ = −40°C 1.2 1.6 1.75 IC = 10 mA VGE = 4.5 V TJ = 25°C − 0.62 1.0 W ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) IC = 1.0 mA VGE = VCE Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage VCE(on) *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 NGB8207AN, NGB8207ABN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.2 1.65 2.0 V TJ = 150°C 1.4 1.6 2.0 TJ = −40°C 1.4 1.7 2.0 TJ = 25°C 1.35 1.8 2.2 TJ = 150°C 1.5 1.9 2.2 TJ = −40°C 1.5 1.85 2.2 TJ = 25°C 1.35 1.8 2.1 TJ = 150°C 1.5 1.8 2.1 TJ = −40°C 1.5 1.8 2.1 ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage VCE(on) IC = 8.0 A VGE = 4.0 V IC = 10 A VGE = 3.7 V IC = 10 A VGE = 4.0 V Forward Transconductance gfs TJ = 25°C 1.35 1.75 2.05 IC = 10 A VGE = 4.5 V TJ = 150°C 1.4 1.75 2.1 TJ = −40°C 1.4 1.8 2.1 IC = 6.0 A VCE = 5.0 V TJ = 25°C − 15.8 − Mhos 750 810 900 pF 75 90 105 4 7 12 TJ = 25°C 0.5 0.55 0.7 TJ = 25°C 2.0 2.32 2.7 TJ = 25°C 2.0 2.5 3.0 TJ = 25°C 8.0 10 13 TJ = 25°C 0.5 0.65 0.75 TJ = 25°C 0.7 1.8 2.0 TJ = 25°C 4.0 4.7 6.0 TJ = 25°C 6.0 10 15 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz VCE = 25 V TJ = 25°C SWITCHING CHARACTERISTICS Turn−On Delay Time (Resistive) Low Voltage Rise Time (Resistive) Low Voltage Turn−Off Delay Time (Resistive) Low Voltage Fall Time (Resistive) Low Voltage Turn−On Delay Time (Resistive) High Voltage Rise Time (Resistive) High Voltage Turn−Off Delay Time (Resistive) High Voltage Fall Time (Resistive) High Voltage td(on) VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W tr td(off) VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W tf td(on) VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W tr VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W td(off) tf *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec NGB8207AN, NGB8207ABN 35 35 30 30 25 25 20 20 ISCIS (A) ISCIS (A) TYPICAL ELECTRICAL CHARACTERISTICS 15 25°C 10 0 0 10 25°C 10 150°C 5 15 150°C 5 20 30 40 50 60 70 80 90 0 100 0 100 200 300 400 500 600 700 800 900 100011001200 L (mH) CLAMPING TIME (mS) 2.75 Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) VGE = 4.0 V 2.5 2.25 2.0 1.75 TJ = −40°C 1.5 TJ = 25°C 1.25 1.0 0.75 TJ = 175°C 2 4 6 8 10 12 14 18 16 20 IC, COLLECTOR CURRENT (A) VCE(on), COLLECTOR−TO−EMITTER VOLTAGE (V) VCE(on), COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 1. Typical Self Clamped Inductive Switching Performance (SCIS) 2.75 VGE = 4.0 V IC = 16 A 2.25 2.0 IC = 10 A 1.75 IC = 8.0 A 1.5 1.25 −40 −20 VGE = 4.5 V 40 VGE = 4.0 V 30 VGE = 3.5 V 20 VGE = 3.0 V 10 VGE = 2.5 V 0 1 2 3 4 5 6 20 60 5.0 V 50 0 0 7 8 9 40 60 80 100 120 140 160 180 Figure 4. Collector−to−Emitter Voltage vs. Junction Temperature IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VGE = 6.0 V IC = 6.0 A TJ, JUNCTION TEMPERATURE (°C) Figure 3. Collector−to−Emitter Voltage vs. Collector Current 60 IC = 20 A 2.5 4.5 V 50 40 VGE = 4.0 V 30 VGE = 3.5 V 20 VGE = 3.0 V 10 0 10 5.0 V VGE = 6.0 V VGE = 2.5 V 0 VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 5. On−Region Characteristics @ TJ = 255C Figure 6. On−Region Characteristics @ TJ = −405C http://onsemi.com 4 10 NGB8207AN, NGB8207ABN TYPICAL ELECTRICAL CHARACTERISTICS 60 5.0 V 40 4.5 V 30 4.0 V 20 3.5 V 3.0 V 10 0 IC, COLLECTOR CURRENT (A) VCE ≥ 5.0 V 6.0 V 50 VGE = 2.5 V 0 1 3 2 4 5 6 7 8 9 TJ = 25°C 40 TJ = 175°C 30 20 10 0 1.0 1.5 2.0 4.0 4.5 Figure 7. On−Region Characteristics @ TJ = 1755C Figure 8. Transfer Characteristics VCE = −24 V 100 VCE = 320 V 10 1 0.1 −40 −20 VCE = 250 V 0 20 40 60 80 100 120 140 160 180 5.0 2.0 IC = 1 mA, VCE = VGE 1.75 1.5 1.25 1.0 0.75 0.5 −40 −20 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 160 180 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Collector−to−Emitter Leakage Current vs. Junction Temperature Figure 10. Gate Threshold Voltage vs. Temperature 10,000 10 TJ = 25°C VGE = 0 V 1000 tr Ciss t, TIME (ms) C, CAPACITANCE (pF) 3.5 VGE, GATE−TO−EMITTER VOLTAGE (V) 1000 100 Coss 1 td(on) VCC = 14 V VGE = 5.0 V RL = 1.0 W RG = 1 kW Crss 0 20 40 60 80 0.1 −40 100 120 140 160 180 200 td(off) tf 10 1 3.0 2.5 VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) 10,000 LEAKAGE CURRENT (mA) TJ = −40°C 50 10 VGE(th), GATE THRESHOLD VOLTAGE (V) IC, COLLECTOR CURRENT (A) 60 −15 10 35 60 85 110 135 160 185 COLLECTOR−TO−EMITTER VOLTAGE (V) TEMPERATURE (°C) Figure 11. Capacitance Variation Figure 12. Resistive Switching Time Variation vs. Temperature http://onsemi.com 5 NGB8207AN, NGB8207ABN TYPICAL ELECTRICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) 100 VGE = 4.0 V Single Pulse TC = 25°C 10 ms 10 100 ms 0.1 1 ms 10 ms VCE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 dc Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Forward Biased Safe Operating Area RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/W) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 t1 t2 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) TJ(pk) − TA = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 t,TIME (S) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 0.1 1 NGB8207AN, NGB8207ABN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V M T B M P U SOLDERING FOOTPRINT* L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 8.38 0.33 F VIEW W−W 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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