NGD18N45CLBT4G

Ignition IGBT Surface Mount > 450V > NGD18N45CLB NGD18N45CLB - 18 A, 450 V, N-Channel Ignition IGBT, DPAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over− Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp 18 Amps, 450 Volts VCE(on) ≤ 2.1 V @ IC = 10 A, VGE ≥ 4.5 V Limits Stress Applied to Load • Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability Maximum Ratings (TJ = 25°C unless otherwise noted) Rating • Emitter Ballasting for Short−Circuit Capability Symbol Value Unit VCES 500 VDC Gate−Gate Voltage VCER 500 VDC Gate−Emitter Voltage VGE 18 VDC 18 ADC 50 AAC Collector−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed IC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range 8.0 • This is a Pb−Free Device Functional Diagram C G R GE E kV Additional Information PD TJ, Tstg 400 V 115 W 0.77 W/°C −55 to +175 °C Datasheet Resources Samples Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Unclamped Collector−To−Emitter Avalanche Characteristics (Note 2) Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 26.0 A, RG = 1000 Ω, L = 1.0 mH, Starting TJ = 25°C 338 VCC = 50 V, VGE = 5.0 V, Pk IL = 10.0 A, RG = 1000 Ω, L = 8.4 mH, Starting TJ = 25°C 420 EAS mJ VCC = 50 V, VGE = 5.0 V, Pk IL = 15.4 A, RG = 1000 Ω, L = 2.0 mH, Starting TJ = 150°C 237 VCC = 50 V, VGE = 5.0 V, Pk IL = 5.7 A, RG = 1000 Ω, L = 15.2 mH, Starting TJ = 150°C 247 Thermal Characteristics Symbol Value RθJC 1.3 Thermal Resistance, Junction to Ambient DPAK (Note 1) RθJA 95 Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds TL 275 °C Symbol Value Unit Short Circuit Withstand Time – Test 1 (See Figure 17, 3 Pulses with 10 ms Period, Ta = 105°C) tsc1-1 1000 µS Short Circuit Withstand Time – Test 1 (See Figure 17, 3 Pulses with 10 ms Period, Ta = 150°C) tsc1-2 800 µS Short Circuit Withstand Time – Test 2 (See Figure 18, 3 Pulses with 10 ms Period, Ta = 105°C) tsc2-1 5 ms Short Circuit Withstand Time – Test 2 (See Figure 18, 3 Pulses with 10 ms Period, Ta = 150°C) tsc2-2 1 ms Thermal Resistance, Junction to Case Unit °C/W Maximum Short-Circuit Times Rating © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Electrical Characteristics - OFF (Note 2) Characteristic Collector−Emitter Clamp Voltage Symbol Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = −40°C to 150°C 430 455 470 BVCES VDC IC = 10 mA VCE = 350 V Zero Gate Voltage Collector Current iECS VGE = 0 V VCE = 15 V VGE = 0 V Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage ICES BVCES(R) Unit VCE = −24 V IC = -75 mA TJ = −40°C to 150°C 440 475 500 TJ = 25°C − 0.5 20 TJ = 150°C − 75 250 TJ = −40°C − 0.2 10 TJ = 25°C − − 2.0 TJ = 25°C − 0.7 1.0 TJ = 150°C − 12 25 TJ = −40°C − 0.1 1.0 TJ = 25°C 24 27 30 TJ = 150°C 26 29 33 TJ = −40°C 23 26 29 µADC mA VDC Gate−Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = −40°C to 150°C 11 13 15 VDC Gate−Emitter Leakage Current IGES VGE = ± 10 V TJ = −40°C to 150°C 384 590 700 µADC Gate-Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ 1. When surface mounted to an FR4 board using the minimum recommended pad size. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Electrical Characteristics - ON (Note 2) Characteristic Gate Threshold Voltage Threshold Temperature Coefficient (Negative) Symbol VGE (th) − Test Conditions Temperature Min Typ Max TJ = 25°C 1.1 1.56 1.9 TJ = 150°C 0.75 1.08 1.4 TJ = −40°C 1.2 1.75 2.1 − − − 3.5 − VCE = 4.5 V, IC = 7 A TJ = −40°C to 150°C 1.10 1.84 2.30 VCE = 4.0 V, IC = 7 A TJ = −40°C to 150°C 1.15 1.89 2.35 TJ = −40°C to 150°C 1.20 1.93 2.50 TJ = −40°C to 150°C 1.45 2.07 2.65 TJ = −40°C to 150°C 1.50 2.13 2.80 TJ = −40°C to 150°C 1.55 2.19 2.85 TJ = −40°C to 150°C − 0.65 1.00 TJ = −40°C to 150°C 6.0 14 25 IC = 1.0 mA, VGE = VCE VCE = 3.7 V, IC = 7 A Collector−to−Emitter On−Voltage VCE (on) VCE = 4.5 V, IC = 10 A VCE = 4.0 V, IC = 10 A VCE = 3.7 V, IC = 10 A VCE = 4.5 V, IC = 10 mA Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Unit VDC mV/°C VDC Mhos Ignition IGBT Surface Mount > 450V > NGD18N45CLB Dynamic Characteristics Characteristic Symbol Input Capacitance CISS Test Conditions VCC = 25 V Output Capacitance COSS VGE = 0 V f = 1.0 MHz Transfer Capacitance Temperature TJ = −40°C to 150°C CRSS Min Typ Max 400 780 1000 50 72 100 4.0 6 10 Unit pF Switching Characteristics (Note 2) Characteristic Symbol Test Conditions Temperature Min Typ Max TJ = 25°C 1.0 2.9 12 TJ = 25°C 1.0 2.5 7.0 Unit VCC = 300 V Turn−Off Delay Time td (off) VGE = 0 V RG = 1.0 kΩ RL = 46 Ω VCC = 300 V Fall Time tf VGE = 5 V RG = 1.0 kΩ RL = 46 Ω µSec VCC = 14 V, Turn−On Delay Time td (on) VGE = 5 V RG = 1.0 kΩ TJ = 25°C 0.1 0.42 1.4 TJ = 25°C 1.0 2.5 9.0 RL = 1 Ω VCC = 14 V, Rise Time tr VGE = 5 V RG = 1.0 kΩ RL = 1 Ω 2. Electrical Characteristics at temperature other than 25ºC, Dynamic and Switching characteristics are not subject to production testing. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Typical Electrical Characteristics (unless otherwise noted) Figure 1. Output Characteristics Figure 2. Output Characteristics 60 60 ° ° 20 10 10 I I 20 0 0 2 0 6 Figure 3. Output Characteristics 0 2 6 Figure 4. Transfer Characteristics 60 ° 20 I 10 0 0 2 6 Figure 5. Collector−to−Emitter Saturation Voltage vs. Junction Temp Figure 6. Collector−to−Emitter Voltage versus Gate−to−Emitter I I I I 2.0 I 1.0 0 100 ° © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Figure 7. Collector−to−Emitter Voltage vs Gate−to−Emitter Voltage Figure 8. Capacitance Variation 10000 ° I 1000 iss I 100 2.0 oss I 10 rss 1.0 1 0 0 10 Figure 9. Gate Threshold Voltage vs. Junction Temperature 0 120 160 200 Figure 10. Minimum Open Secondary Latch Current vs.Inductance 100 2.0 1.6 ° 1.2 ° 10 1.0 IL 0.6 0.2 1 0 10 1 10 ° Figure 11. Typical Open Secondary Latch Current vs. Inductance 100 Figure 12. Inductive Switching Fall Time vs. Temperature 12 10 ° I ° 10 � tf 6 IL t 2 1 1 10 0 10 110 ° © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 0 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Figure 13. Single Pulse Safe Operating Area Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 25°C) (Mounted on an Infinite Heatsink at TA = 125°C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 10 100 s 1 ms 1 10 ms 100 ms 0.1 0.01 10 DC 1 100 s 0.1 100 ms 0.01 1 10 100 1000 1 10 100 AGE (VOLTS) 100 AGE (VOLTS) Figure 15. Pulse Train Safe Operating Area Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 25°C) (Mounted on an Infinite Heatsink at TC = 25°C) 100 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 1 10 100 C OLLE C TOR E MITTE R VOLTAGE (VOLTS) Figure 17. Circuit Configuration for Short Circuit Test #1 1000 COLLECTOR CURRENT (AMPS) 100 t1 = 1 ms, D = 0.05 0.01 1 ms 10 ms t1 = 1 ms, D = 0.05 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 0.1 0.01 1 10 100 CIT OTLELR E CVTOOLR ELRTV C OLLE C TOR E M TAE GM E IT (VTO SO ) LTAGE (VOLTS) Figure 18. Circuit Configuration for Short Circuit Test #2 V BATT = 16 V V BATT = 16 V R L = 0.1 R L = 0.1 L = 10 L = 10 H 5.0 V 5.0 V 0V V IN RG = 1 k 0V V IN H RG = 1 k tsc2 tsc1 R S = 33 m © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 100 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Figure 19. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on minimum pad area) 100 ° 0.2 10 0.1 0.02 1 0.01 0.1 0.01 P Single Pulse 1 t1 0.001 t2 ʺ 0.2 s 1 2 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 450V > NGD18N45CLB Soldering Footrpint Dimensions A E b3 6.20 0.244 C A B c2 4 L3 Z D 12 NOTE 7 b2 e 5.80 0.228 c SIDE VIEW b TOP VIEW H DETAIL A 3 L4 0.005 (0.13) C M C L L1 DETAIL A SEATING PLANE Z BOTTOM VIEW 1 Gate ALTERNATE CONSTRUCTIONS ROTATED 90 CW Dim Millimeters Min Max Min Max A 0.086 0.094 2.18 2.38 A1 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.028 0.045 0.72 1.14 b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L3 mm inches Part Marking System A1 Inches 6.17 0.243 SCALE 3:1 Z GAUGE PLANE 1.60 0.063 BOTTOM VIEW H L2 2.58 0.102 3.00 0.118 0.035 0.050 0.89 L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− 2 Collector YWW F G18 N45BG L 4 Collector 3 Emitter G18N45BG = Device Code Y= WW Year = Work Week ORDERING INFORMATION Device NGD18N45CLBT4G Package Shipping† DPAK (Pb−Free) 2,500 / Tape & Reel 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. 7. OPTIONAL MOLD FEATURE © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18