GA200HS60S

Bulletin I27121 rev. B 07/02 GA200HS60S "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.19V @ VGE = 15V, IC = 200A TJ = 25°C Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25°C @ TC = 85°C @ TC = 25°C @ TC = 110°C Max 600 470 200 800 800 ± 20 2500 830 430 Units V A V W www.irf.com 1 GA200HS60S Bulletin I27121 rev. B 07/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VCES V CE(on) V GE(th) I CES I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Collector-to-Emiter Leakage Current Gate-to-Emitter Leakage Current Min Typ Max Units Test Conditions 600 1.19 1.17 3 1.25 6 1 10 ± 250 mA nA V V GE = 0 V, I C = 1 mA V GE = 1 5V, I C = 2 00A V GE = 1 5V, I C = 2 00A, T J = 1 25°C I C = 0 .5mA V GE = 0 V, V CE = 6 00V V GE = 0 V, V CE = 6 00V, T J = 1 25°C V GE = ± 2 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ Max Units Test Conditions nC IC = 200A VCC = 400V VGE = 15V IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30ETH06 IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30ETH06, TJ = 125°C 1600 1700 260 340 580 670 27 47 74 29 31 77 90 106 121 32500 2080 380 mJ mJ pF VGE = 0V VCC = 30V f = 1.0 MHz Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS T Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque Weight Case to heatsink Case to terminal 1, 2, 3 185 0.1 4 3 g Nm Min - 40 - 40 Typ Max 150 125 0.15 Units °C °C/ W 2 www.irf.com GA200HS60S Bulletin I27121 rev. B 07/02 1000 IC, Collector-to-Emitter Current (A) 1000 Vge = 15V IC , Collector-to-Emitter Current (A) T J = 125˚C 100 T J = 25˚C 100 T J = 25˚C T J = 125˚C 10 Vce = 10V 380µs PULSE WIDTH 10 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1 5 6 7 8 VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics 520 480 440 400 360 320 280 240 200 160 120 80 40 0 25 2 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) I C = 400A 1.5 I C = 200A I = 120A C 1 50 75 100 125 150 0.5 20 40 60 80 100 120 140 160 TC, Case Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature TJ , Junction Temperature (°C) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA200HS60S Bulletin I27121 rev. B 07/02 16 VGE, Gate-to-Emitter Voltage (V) 80 Vcc = 400V Ic = 200A Switching Losses (mJ) Tj = 25˚C, Vce = 480V 70 Vge = 15V, Ic = 200A free-wheeling diode: 30ETH06 12 60 50 40 Eon Eoff 8 4 30 20 0 0 300 600 900 1200 1500 1800 QG, Total Gate Charge (nC) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage 10 0 10 20 30 40 50 RG, Gate Reistance (Ω) Fig. 6 - Typical Switching Losses vs Gate Resistance 80 Tj = 125˚C 70 Vce = 480V Vge = 15V Switching Losses (mJ) 60 Rge = 10 Ω 50 40 30 20 10 0 0 40 80 Free-wheeling diode: 30ETH06 Eoff Eon 120 160 200 IC, Collector-to-Emitter Current (A) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA200HS60S Bulletin I27121 rev. B 07/02 Outline Table Functional Diagram Electrical Diagram Dimensions in millimeters Note: terminals 9 and 11 are not internally connected terminals 8 and 10 are not assembled in the package www.irf.com 5 GA200HS60S Bulletin I27121 rev. B 07/02 Ordering Information Table Device Code GA 200 1 2 H 3 S 4 60 5 S 6 1 2 3 4 5 6 - Essential Part Number IGBT modules Current rating Int-A-Pak Voltage Code Speed/ Type (60 = 600V) (S = Standard Speed IGBT) (200 = 200A) Circuit Configuration (H = Half Bridge without f/w diode) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/02 6 www.irf.com