IRGB30B60K

PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K D2 Pak IRGS30B60K TO-262 IRGSL30B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 78 50 120 120 2500 ±20 370 180 -55 to +175 Units V A g ™ RMS Isolation Voltage, Terminal to Case, t=1 min. Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw V W PD @ TC = 100°C Maximum Power Dissipation °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 0.41 ––– 62 40 ––– Units °C/W d ––– Junction-to-Ambient (PCB Mount, Steady State) eÃà ––– ––– ––– g www.irf.com 1 10/8/03 IRGB/S/SL30B60K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Min. Typ. Max. Units — 0.40 1.95 2.40 2.6 4.5 -10 18 5.0 1000 1830 — Conditions Ref.Fig. Collector-to-Emitter Breakdown Voltage 600 Temperature Coeff. of Breakdown Voltage — — Collector-to-Emitter Voltage — — Gate Threshold Voltage 3.5 Threshold Voltage temp. coefficient — Forward Transconductance — — Zero Gate Voltage Collector Current — — Gate-to-Emitter Leakage Current — — V VGE = 0V, IC = 500µA — V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 30A, VGE = 15V, TJ = 25°C 2.35 2.75 V IC = 30A, VGE = 15V, TJ = 150°C IC = 30A, VGE = 15V, TJ = 175°C 2.95 5.5 V VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C) — S VCE = 50V, IC = 50A, PW = 80µs VGE = 0V, VCE = 600V 250 2000 µA VGE = 0V, VCE = 600V, TJ = 150°C VGE = 0V, VCE = 600V, TJ = 175°C 3000 ±100 nA VGE = ±20V, VCE = 0V 5,6,7 8,9,10 8,9,10 11 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (Peak) Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Min. Typ. Max. Units — 102 153 — 14 21 — 44 66 — 350 620 — 825 955 — 1175 1575 — 46 60 — 28 39 — 185 200 — 31 40 — 635 1085 — 1150 1350 — 1785 2435 — 46 60 — 28 39 — 205 235 — 32 42 — 7.5 — — 1750 2500 — 160 255 — 60 90 FULL SQUARE 10 — — 200 — — nC Conditions IC = 30A VCC = 400V VGE = 15V IC = 30A, VCC = 400V VGE = 15V, RG = 10Ω, L = 200µH TJ = 25°C IC = 30A, VCC = 400V VGE = 15V, RG = 10Ω, L = 200µH TJ = 25°C Ref.Fig. 17 CT1 CT4 µJ f ns CT4 µJ ns IC = 30A, VCC = 400V VGE = 15V, RG = 10Ω, L = 200µH TJ = 150°C IC = 30A, VCC = 400V VGE = 15V, RG = 10Ω, L = 200µH TJ = 150°C CT4 12,14 WF1,WF2 13,15 CT4 WF1 WF2 f nH pF µs A Measured 5mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 120A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG =10Ω TJ = 150°C, Vp = 600V, RG = 10Ω VCC=360V,VGE = +15V to 0V 16 4 CT2 CT3 WF3 WF3 Note  to … are on page 13 2 www.irf.com IRGB/S/SL30B60K 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 T C (°C) Ptot (W) IC (A) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 10 µs 100 IC (A) 10 100 µs 1 1ms DC 0.1 1 10 100 VCE (V) 1000 10000 IC A) 10 1 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGB/S/SL30B60K 60 50 40 ICE (A) 60 VGE = 18V VGE = 15V VGE = 12V VGE = 10V ICE (A) 50 40 30 20 10 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 8.0V 30 20 10 0 0 1 2 3 VCE (V) 4 5 0 1 2 3 VCE (V) 4 5 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 60 50 40 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 30 20 10 0 0 1 2 3 VCE (V) 4 5 ICE (A) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 4 www.irf.com IRGB/S/SL30B60K 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 15A ICE = 30A ICE = 60A 12 10 8 6 4 2 0 ICE = 15A ICE = 30A ICE = 60A 15 20 5 10 VGE (V) 15 20 Fig. 8 - Typical VCE vs. VGE TJ = -40°C Fig. 9 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 VCE (V) 250 T J = 25°C 200 T J = 150°C 10 8 6 4 2 0 5 10 VGE (V) ICE = 60A ICE (A) 12 ICE = 15A ICE = 30A 150 100 T J = 150°C T J = 25°C 0 50 15 20 0 5 10 VGE (V) 15 20 Fig. 10 - Typical VCE vs. VGE TJ = 150°C Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 IRGB/S/SL30B60K 3000 2500 2000 Energy (µJ) 1000 EOFF 1500 1000 500 0 0 20 40 IC (A) 60 80 EON Swiching Time (ns) tdOFF 100 td ON tF tR 10 0 20 40 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150°C; L=200µH; VCE= 400V, RG= 10Ω; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 150°C; L=200µH; VCE= 400V RG= 10Ω; VGE= 15V 3000 10000 2500 Swiching Time (ns) 2000 Energy (µJ) EOFF EON 1000 tdOFF 1500 1000 100 tdON tR tF 500 0 0 25 50 75 100 125 10 0 25 50 75 100 125 RG ( Ω) RG (Ω) Fig. 14 - Typ. Energy Loss vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 30A; VGE= 15V Fig. 15 - Typ. Switching Time vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 30A; VGE= 15V 6 www.irf.com IRGB/S/SL30B60K 10000 16 14 200V 12 10 VGE (V) Cies Capacitance (pF) 1000 400V 8 6 4 Coes 100 Cres 10 0 20 40 60 80 100 2 0 0 25 50 75 100 125 Q G, Total Gate Charge (nC) VCE (V) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE ICE = 30A; L = 600µH 10 Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 τC τ2 τ 0.01 Ri (°C/W) τi (sec) 0.200 0.000428 0.209 0.013031 Ci= τi/Ri Ci i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7 IRGB/S/SL30B60K L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC diode clamp / DUT L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com IRGB/S/SL30B60K 700 600 90% ICE 35 30 tf 25 20 700 600 500 TEST CURRENT 70 60 50 40 30 90% test current tr 10% test current 5% V CE 500 400 V CE (V) 300 200 100 0 400 VCE (V) 300 200 100 0 -100 15.90 15 5% V CE 5% ICE ICE (A) 10 5 0 20 10 0 Eoff Loss Eon Loss -100 -0.20 0.00 0.20 0.40 0.60 -5 0.80 16.00 16.10 Time (µs) 16.20 -10 16.30 Time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 600 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 300 500 ICE VCE 250 400 VCE (V) 200 ICE (A) 300 150 200 100 100 50 0 -5.00 0.00 5.00 time (µS) 10.00 0 15.00 Fig. WF3- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 www.irf.com ICE (A) 9 IRGB/S/SL30B60K TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1.15 (.045) MIN 1 2 3 LEAD 1- GATE 1- GATE ASSIGNMENTS 1 22- DRAIN - GATE COLLECTOR 33- SOURCEDRAIN EMITTER 24- COLLECTOR 4- DRAIN - SOURCE 3 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 L OT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" INTERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 10 www.irf.com IRGB/S/SL30B60K D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS SEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com 11 IRGB/S/SL30B60K TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 12 www.irf.com IRGB/S/SL30B60K D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω. ‚ This is only applied to TO-220AB package. ƒ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. „ Energy losses include "tail" and diode reverse recovery. … Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03 www.irf.com 13