IRGPS40B120UP

PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free C VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation. ICE = 40A, Tj=25°C Super-247™ Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 1200 80 40 160 160 ± 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Le Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package) Min. ––– ––– ––– 20 (2) ––– ––– Typ. ––– 0.24 ––– ––– 6.0 (0.21) 13 Max. 0.20 ––– 40 ––– ––– ––– Units °C/W N(kgf) g (oz) nH www.irf.com 1 03/15/05 IRGPS40B120UP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Temperature Coeff. of Breakdown Voltage ––– 0.40 Collector-to-Emitter Saturation Voltage ––– 3.12 ––– 3.39 ––– 3.88 ––– 4.24 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage ––– -12 Forward Transconductance ––– 30.5 Zero Gate Voltage Collector Current ––– ––– ––– 100 Gate-to-Emitter Leakage Current ––– ––– Ref.Fig. Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C) 5, 6 3.40 IC = 40A VGE = 15V 7, 9 3.71 V IC = 50A 10 4.39 IC = 40A, TJ = 125°C 4.79 IC = 50A, TJ = 125°C 11 8, 9 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 10 ,11 ––– S VCE = 50V, IC = 40A, PW=80µs 500 µA VGE = 0V, VCE = 1200V 1200 VGE = 0V, VCE = 1200V, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions 510 IC = 40A 65 nC VCC = 600V 248 VGE = 15V 1750 µJ IC = 40A, VCC = 600V 2050 VGE = 15V,RG = 4.7 Ω, L =200µH 3800 Ls = 150nH TJ = 25°C 2300 TJ = 125°C 2950 µJ Energy losses include "tail" and 5250 diode reverse recovery. 99 IC = 40A, VCC = 600V 55 VGE = 15V, RG = 4.7Ω L =200µH 365 ns Ls = 150nH, T J = 125°C 33 ––– VGE = 0V ––– pF VCC = 30V ––– f = 1.0MHz TJ = 150°C, IC = 160A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7Ω TJ = 150°C, Vp =1200V 10 ––– ––– µs VCC = 900V, VGE = +15V to 0V, RG = 4.7Ω Typ. 340 43 165 1400 1650 3050 1950 2200 4150 76 39 332 25 4300 270 160 Ref.Fig. 17 CT1 CT4 WF1 WF2 12,14 13, 15 CT4 WF1 WF2 16 4 SCSOA Short Circuit Safe Operting Area CT3 WF4 Note:  VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 4.7Ω. 2 www.irf.com IRGPS40B120UP 100 700 600 80 500 Ptot (W) 60 IC (A) 400 300 200 40 20 100 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 0 50 100 T C (°C) 150 200 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 2 µs 10 µs 100 IC (A) 10 100 µs 1ms IC A) 10 1 10 100 1000 10000 1 DC 10ms 0.1 1 10 100 VCE (V) 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGPS40B120UP 120 100 80 ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 70 60 50 40 30 20 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 40 20 10 0 0 1 2 3 VCE (V) 4 5 0 0 2 VCE (V) 4 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 500 450 400 350 300 250 200 150 T J = 25°C T J = 125°C 60 ICE (A) 40 20 100 50 TJ = 125°C T J = 25°C 0 5 10 VGE (V) 15 20 0 0 2 VCE (V) 4 6 0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs Fig. 8 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 4 www.irf.com IRGPS40B120UP 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 20A ICE = 40A ICE = 80A 12 10 8 6 4 2 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 20A ICE = 40A ICE = 80A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 12 10 8 6 4 2 5 10 VGE (V) 15 20 ICE = 20A ICE = 40A ICE = 80A VCE (V) Fig. 11 - Typical VCE vs. VGE TJ = 125°C www.irf.com 5 IRGPS40B120UP 4500 4000 3500 3000 Energy (µJ) 1000 tdOFF 2500 2000 1500 1000 500 0 0 20 40 IC (A) 60 80 Swiching Time (ns) EON EOFF 100 tdON tR tF 10 20 40 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V 5000 4500 4000 3500 1000 tdOFF EOFF 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 EON Swiching Time (ns) Energy (µJ) 100 td ON tR tF 10 0 5 10 15 20 25 RG ( Ω) RG ( Ω) Fig. 14 - Typ. Energy Loss vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 40A; VGE= 15V Fig. 15 - Typ. Switching Time vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 40A; VGE= 15V 6 www.irf.com IRGPS40B120UP 10000 16 Cies 14 12 600V 800V Capacitance (pF) 1000 10 Coes Cres 100 VGE (V) 8 6 4 2 10 0 20 40 60 80 100 0 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) VCE (V) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE ICE = 40A; L = 600µH 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.01 0.02 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 0.001 0.01 0.01 1E-005 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 18. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7 IRGPS40B120UP L L VCC 0 80 V Rg DUT 1K DUT 1000V Fig.C.T.1 - Gate Charge Circuit (turn-on) Fig.C.T.2 - RBSOA Circuit DRIVER DC DIODE CLAMP L 900V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C. SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com IRGPS40B120UP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 1100 1000 900 800 700 VCE (V) 600 I CE (A) 500 400 300 200 100 0 -100 -0.20 0.00 Eoff Loss 5% ICE 90% ICE Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 900 800 90 80 70 60 TEST CURRENT 50 40 700 600 500 30 VCE (V) 50 90% test current 10% test current 20 400 300 200 100 0 40 30 5% V CE 10 5% V CE 20 10 0 -10 4.60 0 0.20 0.40 0.60 -10 0.80 -100 4.10 4.20 4.30 4.40 4.50 Time(µs) Time (µs) Fig. WF.3 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 1000 900 VCE 800 700 600 V CE (V) 500 400 300 200 100 0 -5.00 ICE 400 350 300 250 200 150 100 50 0 15.00 ICE (A) 500 450 0.00 5.00 time (µS) 10.00 www.irf.com 9 ICE (A) tf IRGPS40B120UP Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPS37N50A 719C 17 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Note: "P" in assembly line position indicates "Lead-Free" TOP Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/05 10 www.irf.com