DPG30I300HA

DPG30I300HA HiPerFRED VRRM = 300 V I FAV = 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG30I300HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG30I300HA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.1 mA IF = 30 A TVJ = 25°C 1.34 V IF = 60 A 1.63 V IF = 30 A 1.06 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V 10.5 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG30I300HA Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D P G 30 I 300 HA IXYS Logo g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DPG30I300HA Similar Part DPG30I300PA DPF30I300PA Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30I300HA Package TO-220AC (2) TO-220AC (2) * on die level Delivery Mode Tube Code No. 507313 Voltage class 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG30I300HA Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG30I300HA Fast Diode 60 0.5 50 16 IF = 60 A 30 A 15 A 0.4 40 TVJ = 150°C IF Qr 0.3 IRM [μC] 0.2 [A] 125°C 30 IF = 60 A 30 A 15 A 12 8 [A] 20 25°C 0.1 10 0.0 0.4 0.8 1.2 1.6 2.0 TVJ = 125°C VR = 200 V 0 100 200 VF [V] 400 500 80 200 300 400 500 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 800 tfr 16 TVJ = 125°C VR = 200 V IF = 30 A 700 14 12 600 60 trr Kf 0.8 50 [ns] IF = 60 A 30 A 15 A 40 IRM 30 Qrr 0.2 VFR tfr 500 [ns] 0.4 100 -diF /dt [A/μs] TVJ = 125°C VR = 200 V 70 1.0 0.6 0 Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt VR = 200 V IF = 30 A diF/dt = 500 A/µs 1.2 300 -diF /dt [A/μs] Fig. 1 Forward current IF versus VF 1.4 TVJ = 125°C VR = 200 V 4 10 400 8 300 6 200 4 100 2 VFR [V] 20 0 40 80 120 160 0 TVJ [°C] 100 200 300 400 500 0 -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 200 300 400 500 -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt 14 100 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 TVJ = 125°C VR = 200 V 12 10 IF = 5 A Erec 8 [μJ] ZthJC 10 A 20 A [K/W] 6 Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 4 2 0 100 200 300 400 500 0.1 0.00 1 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 0.01 0.1 1 ti [s] 0.0018 0.002 0.012 0.07 0.345 10 t [s] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c