DPG60C200HB

DPG60C200HB HiPerFRED² VRRM = I FAV = 2x 30 A t rr = 35 ns 200 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200HB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 200 V 200 V VR = 200 V TVJ = 25°C 1 µA VR = 200 V TVJ = 150°C 0.1 mA IF = 30 A TVJ = 25°C 1.34 V IF = 60 A 1.63 V IF = 30 A 1.06 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V 10.5 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 130 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D P G 60 C 200 HB IXYS Logo g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DPG60C200HB Similar Part DPG60C200QB DPF60C200HB DPF60C200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C200HB Package TO-3P (3) TO-247AD (3) ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 506294 Voltage class 200 200 200 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200HB Fast Diode 16 80 0.4 IF = 60 A 30 A 15 A 70 60 14 12 0.3 50 IF TVJ = 150°C IRM Qrr 40 [A] 10 8 0.2 [A] [μC] 30 20 IF = 60 A 30 A 15 A TVJ = 125°C VR = 130 V 0.1 25°C 6 TVJ = 125°C VR = 130 V 4 2 10 0.0 0.4 0.8 1.2 1.6 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 70 1.0 trr 50 IF = 60 A 30 A 15 A IRM Qrr 0.2 0 500 10 400 8 300 6 VFR [ns] 80 120 160 200 400 600 0 -diF /dt [A/μs] TVJ [°C] 16 TVJ = 125°C VR = 130 V IF = 30 A 2 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 4 100 20 40 [V] 200 30 0.4 12 tfr [ns] 40 0.6 600 VFR tfr 60 Kf 0.8 400 600 TVJ = 125°C VR = 130 V 1.2 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 200 0 600 400 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF /dt Fig. 5 Typ. reverse recov, time trr versus -diF /dt 1.2 TVJ = 125°C VR = 130 V 14 1.0 12 Erec 0.8 IF = 15 A 10 ZthJC 30 A 60 A 8 0.6 [K/W] [μJ] 6 0.4 Rthi [K/W] ti [s] 0.2 0.1311 0.1377 0.3468 0.2394 0.095 0.0018 0.002 0.012 0.07 0.345 4 2 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c