IXFN73N30

HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS(on) 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 300 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 73 73 A IDM TC = 25°C, pulse width limited by TJM 292 292 A IAR TC = 25°C 40 40 A EAR TC = 25°C 30 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 W 5 5 V/ns PD TC = 25°C 500 520 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 300 - °C - 2500 3000 V~ V~ 0.9/6 10 Weight Symbol Test Conditions 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = 1 mA 300 VGS(th) V DS = VGS, ID = 8 mA 2 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 VDSS V GS = 0 V RDS(on) V 4 V ±200 nA TJ = 25°C TJ = 125°C 400 2 uA mA V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 45 mΩ © 2001 IXYS All rights reserved G D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features l International standard packages l JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification l miniBLOC with Aluminium nitride isolation l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance l Fast intrinsic Rectifier Applications l DC-DC converters l Synchronous rectification l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l Temperature and lighting controls l Low voltage relays Advantages l Easy to mount l Space savings l High power density 92805J (11/01) IXFK 73N30 IXFN 73N30 TO-264 AA Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test 50 S 9000 pF 1500 pF Crss 580 pF td(on) 30 ns Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode ns ns 50 ns 360 nC 60 nC 180 nC 0.25 K/W 0.15 K/W 0.24 K/W 0.05 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM 80 100 IF = IS, -di/dt = 100 A/µs, VR = 100 V 73 A 292 A 1.5 V 200 ns µC A 2 40 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 Inches Min. Max. 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 73N30 IXFN 73N30 Fig. 1 Output Characteristics 160 160 8V 7V VGS = 10V 140 Fig. 2 Input Admittance 140 TJ = 25°C 120 ID - Amperes ID - Amperes 120 100 6V 80 60 40 TJ = 25°C 100 80 60 40 5V 20 20 0 0 0 2 4 6 8 10 12 14 0 1 2 3 VDS - Volts 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 2.0 2.50 TJ = 25°C 2.25 RDS(on) - Normalized 1.8 RDS(on) - Normalized 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.6 VGS = 10V 1.4 VGS = 15V 1.2 1.0 2.00 1.75 ID = 40A 1.50 1.25 1.00 0.75 0.8 0 40 80 120 160 200 0.50 -50 240 -25 0 ID - Amperes 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 70 1.1 BV/VG(th) - Normalized 80 60 50 40 30 20 BVDSS VGS(th) 1.0 0.9 0.8 0.7 0.6 10 0 -50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 4 -25 0 25 50 75 TC - Degrees C © 2001 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 TJ - Degrees C 100 125 150 IXFK 73N30 IXFN 73N30 Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 10 10000 9000 ID = 42A 8000 IG = 10mA Capacitance - pF VGE - Volts 8 VDS = 150V 6 4 2 Ciss 7000 6000 f = 1MHz VDS = 25V 5000 4000 Coss 3000 2000 Crss 1000 0 0 0 50 100 150 200 250 300 350 400 0 5 Gate Charge - nCoulombs 160 10 15 20 25 VDS - Volts Fig.9 Source Current vs. Source to Drain Voltage 140 ID - Amperes 120 100 80 TJ = 125°C 60 40 TJ = 25°C 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Thermal Response - K/W Fig.10 Transient Thermal Impedance 0.1 0.01 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.