IXFP4N100P

IXFA4N100P IXFP4N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = 1000V = 4A  3.3  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 4 8 A A IA TC = 25C 4 A EAS TC = 25C 200 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 150 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 Nm/lb.in Nm/lb.in 2.5 3.0 g g TO-220 (IXFP) G D S G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 © 2018 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Features      International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D (Tab)   High Power Density Easy to Mount Space Savings V 6.0 V            100 nA 10 A 750 A 3.3  Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99921B(11/18) IXFA4N100P IXFP4N100P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.8 RGi VDS= 20V, ID = 0.5 • ID25, Note 1 Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd E 3.0 S 1.6  1456 pF 90 pF 16 pF 24 ns 36 ns 37 ns 50 ns 26 nC 9 nC 12 nC C2 A E1 L1 D1 D 1 2 L2 3 b b2 A1 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.83 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A IF = IS, VGS = 0V, Note 1 1.3 V 300 ns IF = 2A, VGS = 0V, -di/dt = 100A/s VR = 100V 5.30 A 0.34 μC TO-220 Outline E A oP A1 H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source Note 1: Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA4N100P IXFP4N100P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 4.0 8 VGS = 10V 8V 3.5 3.0 6 7V 2.5 I D - Amperes I D - Amperes VGS = 10V 8V 7 6V 2.0 1.5 7V 5 4 6V 3 2 1.0 1 5V 0.5 5V 0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 5 10 15 25 30 35 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.0 4.0 VGS = 10V 7V 3.6 20 VDS - Volts VDS - Volts VGS = 10V 2.6 I D - Amperes 2.8 RDS(on) - Normalized 3.2 6V 2.4 2.0 1.6 1.2 0.8 5V 2.2 I D = 4A I D = 2A 1.8 1.4 1.0 0.6 0.4 0.0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 28 -25 0 Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 4.5 2.4 VGS = 10V 4.0 o TJ = 125 C 2.2 3.5 2.0 3.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 o TJ = 25 C 2.5 2.0 1.4 1.5 1.2 1.0 1.0 0.5 0.8 0.0 0 1 2 3 4 5 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA4N100P IXFP4N100P Fig. 7. Input Admittance 5.0 4.5 4.5 VDS = 10V 4.0 o TJ = - 40 C VDS = 10V 4.0 3.5 3.5 o TJ = 125 C g f s - Siemens I D - Amperes Fig. 8. Transconductance 5.0 o 3.0 25 C o - 40 C 2.5 2.0 3.0 o 125 C 2.5 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 o 25 C 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.0 0.5 1.0 1.5 2.0 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 3.0 3.5 4.0 4.5 5.0 Fig. 10. Gate Charge 12 16 VDS = 500V 14 10 I D = 2A I G = 10mA 12 VGS - Volts 8 I S - Amperes 2.5 I D - Amperes 6 4 10 8 6 o TJ = 125 C 4 o TJ = 25 C 2 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 VSD - Volts 10 15 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 Ciss 1,000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz Coss 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_4N100P(45-744)7-3-13-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.