IXFT320N10T2

IXFH320N10T2 IXFT320N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability) 320 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 800 A D Maximum Ratings IA TC = 25°C 160 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 15 V/ns PD TC = 25°C 1000 W -55 ... +175 °C TJ TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 100 G S D (Tab) G = Gate S = Source VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C VGS = 10V, ID = 100A, Notes 1 & 2 4.0 V ±200 nA 25 μA International Standard Packages High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z z Advantages z z z z z z z z z © 2012 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications 1.75 mA 3.5 mΩ D = Drain Tab = Drain Features z V D (Tab) S TO-268 (IXFT) z RDS(on) = 100V = 320A Ω ≤ 3.5mΩ Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100237A(5/12) IXFH320N10T2 IXFT320N10T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 80 130 S 26 nF 2250 pF 450 pF 1.48 Ω 36 ns 46 ns 73 ns 177 ns 430 nC 110 nC 125 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 °C/W RthJC RthCH TO-247 (IXFH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM QRM 98 -di/dt = 100A/μs VR = 50V 320 A 1200 A 1.2 V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline ns 6.6 A 320 nC Notes: Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH320N10T2 IXFT320N10T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 320 400 VGS = 15V 10V 8V 7V 280 300 200 ID - Amperes ID - Amperes 240 6V 160 120 5V 80 250 6V 200 150 5V 100 40 50 4V 0 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature 350 4.0 2.8 VGS = 15V 10V 8V 7V 300 VGS = 10V 2.4 R DS(on) - Normalized 250 ID - Amperes VGS = 15V 10V 7V 350 6V 200 150 5V 100 I 2.0 D = 320A I D = 160A 1.6 1.2 0.8 50 4V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 160A vs. Drain Current 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 180 3.2 VGS = 10V 160 External Lead Current limit 2.8 140 TJ = 175ºC 120 2.4 ID - Amperes R DS(on) - Normalized 50 TJ - Degrees Centigrade 2.0 100 80 60 1.6 40 1.2 TJ = 25ºC 20 0.8 0 0 50 100 150 200 250 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH320N10T2 IXFT320N10T2 Fig. 8. Transconductance Fig. 7. Input Admittance 220 240 TJ = - 40ºC 200 200 180 25ºC 140 TJ = 150ºC 25ºC - 40ºC 120 g f s - Siemens ID - Amperes 160 100 80 160 150ºC 120 80 60 40 40 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 20 40 60 80 VGS - Volts 120 140 160 180 200 220 240 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 350 10 300 250 9 VDS = 50V 8 I G = 10mA I D = 160A 7 VGS - Volts IS - Amperes 100 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit f = 1 MHz Ciss Coss 1,000 100µs External Lead Limit 100 10,000 ID - Amperes Capacitance - PicoFarads 25µs 1ms 10 TJ = 175ºC TC = 25ºC Single Pulse Crss 100 DC 10ms 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFH320N10T2 IXFT320N10T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 300 300 RG = 1Ω , VGS = 10V I D = 200A 200 RG = 1Ω , VGS = 10V VDS = 50V 150 100 I D VDS = 50V 250 t r - Nanoseconds t r - Nanoseconds 250 200 TJ = 125ºC 150 TJ = 25ºC 100 = 100A 50 50 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 td(on) - - - - 70 I D = 100A I D = 200A 50 100 0 3 4 5 6 7 8 9 tf 80 I D = 100A 200 150 10 100 25 35 45 55 105 800 350 95 TJ = 125ºC 90 RG = 1Ω, VGS = 10V 85 VDS = 50V 200 80 TJ = 25ºC 50 125 75 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 350 I D = 200A 200 I D = 100A 200 0 180 400 VDS = 50V 300 60 200 160 450 250 100 140 td(off) - - - - 400 65 0 tf 300 50 120 115 500 70 100 105 TJ = 125ºC, VGS = 10V 600 100 80 95 500 700 t f - Nanoseconds 100 60 85 150 100 50 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 400 t d(off) - Nanoseconds t f - Nanoseconds 450 40 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 900 150 65 TJ - Degrees Centigrade 110 250 70 60 500 td(off) - - - - 90 250 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 100 I D = 200A RG - Ohms 300 110 VDS = 50V 300 30 10 td(off) - - - - RG = 1Ω, VGS = 10V 350 t f - Nanoseconds t r - Nanoseconds 300 2 200 t d(off) - Nanoseconds 90 t d(on) - Nanoseconds VDS = 50V 400 1 180 120 400 110 TJ = 125ºC, VGS = 10V 200 160 450 130 tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 500 120 ID - Amperes IXFH320N10T2 IXFT320N10T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance dfafas 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_320N10T2(98)02-01-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.