IXGN320N60A3

IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 170A VCE(sat)  1.30V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25C (Chip Capability) TC = 110C Terminal Current Limit TC = 25C, 1ms 320 170 200 1200 A A A A G = Gate, C = Collector, E = Emitter SSOA VGE = 15V, TVJ = 125C, RG = 1 ICM = 320 A Either Emitter Terminal Can Be Used (RBSOA) Clamped Inductive Load PC TC = 25C E G E C as Main or Kelvin Emitter @0.8 • VCES 735 W TJ -55 ... +150 C Features TJM Tstg 150 -55 ... +150 C C  2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g VISOL Md 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) Weight    Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IC = 1mA, VGE = 0V 600 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 100A, VGE = 15V, Note 1 = 320A © 2015 IXYS CORPORATION, All Rights Reserved  V 5.5 V    150 μA  1.5 mA  ±400 nA 1.05 1.46 1.30 High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. BVCES Optimized for Low Conduction Losses High Avalanche Capability Isolation Voltage 3000 V~ International Standard Package V V    Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99576E(01/15) IXGN320N60A3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 70 IC = 60A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg(on) Qge IC = 80V, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Load, TJ = 25C IC = 80A, VGE = 15V VCE = 400V, RG = 1 Resistive Load, TJ = 125°C 125 S 18 nF 985 pF 150 pF 560 nC 94 nC 195 nC 63 ns 68 ns 290 ns 740 ns 62 ns 77 ns 330 ns 1540 ns IC = 80A, VGE = 15V VCE = 400V, RG = 1 M4 screws (4x) supplied 0.17 C/W RthJC RthCK Note SOT-227B miniBLOC (IXGN) 0.05 C/W 1. Pulse test, t  300μs, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN320N60A3 Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Extended Output Characteristics @ TJ = 25ºC 160 320 VGE = 15V 13V 11V 9V I C - Amperes 240 VGE = 15V 13V 11V 9V 140 120 200 I C - Amperes 280 7V 160 120 100 80 7V 60 40 80 5V 20 40 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 1.8 0.2 0.4 VCE - Volts Fig. 3. Dependence of VCE(sat) on Junction Temperature 1.10 0.8 1.2 1.4 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.2 TJ = 25ºC 2.8 1.00 I C = 160A 2.4 VCE - Volts 0.95 0.90 0.85 I C = 320A 160A 80A 2.0 1.6 0.80 I C = 80A 1.2 0.75 0.70 0.8 -50 -25 0 25 50 75 100 125 150 5 6 7 8 Fig. 5. Input Admittance 200 9 10 11 12 13 14 15 180 200 VGE - Volts TJ - Degrees Centigrade Fig. 6. Transconductance 240 TJ = - 40ºC 180 200 160 TJ = 125ºC 25ºC - 40ºC 25ºC g f s - Siemens 140 I C - Amperes 1.0 VGE = 15V 1.05 VCE(sat) - Normalized 0.6 VCE - Volts 120 100 80 160 125ºC 120 80 60 40 40 20 0 0 3.5 4.0 4.5 5.0 5.5 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 6.0 6.5 7.0 0 20 40 60 80 100 I C - Amperes 120 140 160 IXGN320N60A3 Fig. 7. Gate Charge Fig. 8. Capacitance 100,000 16 Capacitance - PicoFarads I C = 80A I G = 10mA 12 VGE - Volts f = 1 MHz VCE = 300V 14 10 8 6 4 Cies 10,000 Coes 1,000 Cres 2 100 0 0 100 200 300 400 500 0 600 5 10 15 Fig. 9. Reverse-Bias Safe Operating Area 350 20 25 30 35 40 VCE - Volts QG - NanoCoulombs 1 Fig. 10. Maximum Transient Thermal Impedance 300 Z(th)JC - ºC / W I C - Amperes 250 200 150 100 0.1 0.01 TJ = 125ºC RG = 1Ω dv / dt < 10V / ns 50 0 100 150 200 250 300 350 400 450 500 550 600 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXGN320N60A3 Fig.11. Resistive Turn-on Rise Time vs. Junction Temperature 170 170 RG = 1Ω , VGE = 15V RG = 1Ω , VGE = 15V 150 VCE = 400V 130 t r - Nanoseconds t r - Nanoseconds 150 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current I C = 320A 110 I C = 160A 90 70 VCE = 400V 130 TJ = 125ºC 110 90 70 I C = 80A 50 TJ = 25ºC 50 25 35 45 55 65 75 85 95 105 115 125 80 100 120 140 160 Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance tr 400 tf 220 240 260 280 300 320 76 I C = 320A, 160A, 80A 250 72 200 68 150 64 100 60 340 I C = 80A VCE = 400V 1300 300 I C = 160A 1100 260 900 I C = 320A 700 220 td(off) - Nanoseconds 80 380 td(off) - - - - RG = 1Ω, VGE = 15V 1500 t d ( o n ) - Nanoseconds VCE = 400V 300 200 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 1700 84 TJ = 125ºC, VGE = 15V 350 t r - Nanoseconds 88 td(on) - - - - t f - Nanoseconds 450 180 I C - Amperes TJ - Degrees Centigrade 180 I C = 80A 50 500 56 1 2 3 4 5 6 7 8 9 25 10 35 45 55 Fig. 15. Resistive Turn-off Switching Times vs. Collector Current 1600 350 TJ = 125ºC tf 1700 TJ = 25ºC 250 600 225 t f - Nanoseconds t f - Nanoseconds 105 115 140 125 200 RG = 1Ω, VGE = 15V 900 VCE = 400V 800 1500 700 I C = 80A 1400 600 I C = 160A 1300 500 1200 400 1100 td(off) - - - - 1000 td(off) - - - - t d(off) - Nanoseconds 275 t d(off) - Nanoseconds 1000 tf 95 TJ = 125ºC, VGE = 15V 1600 300 400 85 Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance 1800 325 1200 800 75 TJ - Degrees Centigrade RG - Ohms 1400 65 300 I C = 320A 1000 200 VCE = 400V 200 80 120 160 200 240 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 280 175 320 900 100 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: G_320N60A3(96)7-03-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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