IXGT20N120B

High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat) tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings IC25 TC = 25°C 40 A IC110 TC = 110°C 20 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 80 @ 0.8 VCES A 190 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C PC TC = 25°C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) (TO-247) Weight Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 300 °C 260 °C 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V A V ns TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G 1.13/10Nm/lb.in. TO-247 AD TO-268 Symbol = 1200 = 40 = 3.4 = 160 G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity Advantages = 250 µA, VGE = 0 V = 250 µA, VCE = VGE = 20A, VGE = 15 V © 2003 IXYS All rights reserved 1200 2.5 TJ = 25°C TJ = 125°C 2.9 2.8 5 V V z 50 µA z ±100 nA 3.4 3.8 V V z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98986D(05/03) IXGH IXGT Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 20A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 18 S 1700 pF 95 pF Cres 35 pF Qg 72 nC Cies Coes Qge 12 VCE = 25 V, VGE = 0 V, f = 1 MHz 12 nC Qgc IC = 20A, VGE = 15 V, VCE = 0.5 VCES 27 nC td(on) 25 ns 15 ns tri Inductive load, TJ = 25°°C td(off) IC = 20 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω tfi 150 280 ns 160 320 ns Eoff 2.1 3.5 mJ td(on) 25 ns 18 ns tri Eon td(off) tfi Inductive load, TJ = 125°°C 0.9 mJ IC = 20A, VGE = 15 V 270 ns VCE = 0.8 VCES, RG = Roff = 10 Ω 360 ns 3.5 mJ Eoff RthJC RthCK 20N120B 20N120B TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.65 K/W (TO-247) 0.25 K/W Min Recommended Footprint Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH IXGT Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 40 160 VG E = 15V 13V 11V I C - Amperes 30 9V I C - Amperes 35 25 7V 20 15 10 VG E = 15V 140 13V 120 11V 100 9V 80 60 7V 40 5V 5 20 0 5V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 Fig. 3. Output Characteristics @ 125 Deg. C VCE (sat) - Normalized I C - Amperes 25 20 7V 15 10 5V 5 0 1.5 2 2.5 3 I C = 40A 1 I C = 20A 0.9 3.5 4 4.5 I C = 10A 0.7 5 -50 0 25 50 75 100 125 150 70 80 Fig. 6. Transconductance 27 70 24 60 21 G f s - Siemens 80 50 40 T J = -40ºC 25ºC 125ºC 10 -25 TJ - Degrees Centigrade Fig. 5. Input Admittance 20 18 1.1 V CE - Volts 30 16 1.2 0.8 1 14 VG E = 15V 1.3 9V 0.5 12 1.4 VG E = 15V 13V 11V 30 10 Fig. 4. Temperature Dependence of V CE(sat) 40 35 8 V CE - Volts V CE - Volts I C - Amperes 20N120B 20N120B T J = -40ºC 25ºC 125ºC 18 15 12 9 6 3 0 0 3 4 5 6 7 V GE - Volts © 2003 IXYS All rights reserved 8 9 10 0 10 20 30 40 50 I C - Amperes 60 IXGH IXGT Fig. 8. Dependence of Eoff on IC Fig. 7. Dependence of Eoff on RG 14 14 I C = 40A 10 T J = 125ºC VG E = 15V VC E = 960V 8 I C = 20A 6 4 2 T J = 125ºC VG E = 15V VC E = 960V 12 E off - milliJoules E off - milliJoules 12 10 R G = 56 Ohms 8 R G = 5 Ohms 6 4 I C = 10A 0 2 0 10 20 30 40 50 60 10 15 20 Fig. 9. Dependence of Eoff on Temperature 16 35 40 15 VC E = 600V I C = 20A I G = 10mA 12 10 I C = 40A VG E - Volts E off - milliJoules 12 30 Fig. 10. Gate Charge So lid lines - R G = 56 Ohms Dashed lines - R G = 5 Ohms VG E = 15V VC E = 960V 14 25 I C - Amperes R G - Ohms 8 I C = 20A 6 4 9 6 3 2 I C = 10A 0 0 0 25 50 75 100 125 0 150 10 20 30 40 50 60 70 80 Q G - nanoCoulombs TJ - Degrees Centigrade Fig. 11. Capacitance Fig. 12. Reverse-Bias Safe Operating Area 90 10000 f = 1M Hz 80 TJ = 125º C R G = 10 Ohms dV/dT < 10V/ns 70 1000 IC - Amperes Capacitance - pF 20N120B 20N120B C i es 100 60 50 40 30 C oes 20 C res 10 10 0 0 5 10 15 20 25 30 35 40 V CE - Volts 100 300 500 700 900 1100 V CE - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1300 IXGH IXGT 20N120B 20N120B F ig . 13. M aximu m Tran sien t Th erm al R esistan ce R (th) J C - (ºC/W) 1 0 .1 1 10 10 0 Puls e W idth - millis ec onds © 2003 IXYS All rights reserved 10 0 0 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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