IXTA1R6N100D2HV

IXTA1R6N100D2HV High Voltage Depletion Mode Power MOSFET VDSX ID(on) RDS(on) D = >  1000V 1.6A 10  N-Channel G TO-263HV (IXTA..HV) S G S Symbol Test Conditions VDSX TJ = 25C to 150C VGSX Maximum Ratings D (Tab) 1000 V Continuous 20 V VGSM Transient 30 V PD TC = 25C 100 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 10..65 / 2.2..14.6 N/lb 2.5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Force Weight G = Gate S = Source D = Drain Tab = Drain Features • High Voltage package • High Blocking Voltage • Normally ON Mode • International Standard Package • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 100A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 0.8A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 • Easy to Mount • Space Savings • High Power Density Characteristic Values Min. Typ. Max. 1000 - 2.5 - 4.5 V Applications V • • • • • • 100 nA 2 A 25 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved 10 1.6  Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads A DS100778B(11/19) IXTA1R6N100D2HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 0.8A, Note 1 0.65 Ciss Coss 1.10 S 645 pF 43 pF 11 pF 27 ns 65 ns 34 ns 41 ns 27.0 nC 1.6 nC 13.5 nC VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 500V, ID = 0.8A RG = 5 (External) Qg(on) Qgs VGS = 5V, VDS = 500V, ID = 0.8A Qgd 1.25 C/W RthJC Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s 60 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 1.6A, VGS = -10V, Note 1 trr IRM QRM IF = 1.6A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 970 9.96 4.80 1.3 V ns A μC Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA1R6N100D2HV o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 4.0 1.6 VGS = 5V 1V 0V 1.4 VGS = 5V 2V 1V 3.5 1.2 3.0 1.0 2.5 I D - Amperes I D - Amperes 0V -1V 0.8 0.6 0.4 2.0 -1V 1.5 1.0 - 2V 0.2 - 2V 0.5 - 3V 0.0 - 3V 0.0 0 2 4 6 8 10 12 14 0 10 20 30 VDS - Volts o 70 80 Fig. 4. Drain Current @ TJ = 25 C VGS = 5V 1V 0V VGS = - 3.25V 1E-02 - 3.50V 1E-03 - 3.75V -1V 1 I D - Amperes I D - Amperes 60 1E-01 1.2 0.8 0.6 - 2V 0.4 1E-04 - 4.00V 1E-05 - 4.25V 1E-06 - 4.50V 1E-07 0.2 - 4.75V 1E-08 - 3V 0 1E-09 0 4 8 12 16 20 24 28 32 0 100 200 300 VDS - Volts 400 500 600 700 800 900 1000 1100 1200 VDS - Volts o Fig. 5. Drain Current @ TJ = 100 C Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+12 1.E-01 - 3.75V 1.E+10 - 4.00V 1.E+09 1.E-04 - 4.25V 1.E-05 - 4.50V - 4.75V 1.E-06 R O - Ohms 1.E-03 ∆ VDS = 700V - 100V 1.E+11 VGS = - 3.50V 1.E-02 I D - Amperes 50 o Fig. 3. Output Characteristics @ TJ = 125 C 1.6 1.4 40 VDS - Volts o TJ = 25 C 1.E+08 1.E+07 o TJ = 100 C 1.E+06 1.E+05 1.E-07 1.E+04 0 100 200 300 400 500 600 700 800 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -4.8 -4.6 -4.4 -4.2 -4.0 VGS - Volts -3.8 -3.6 -3.4 -3.2 IXTA1R6N100D2HV Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.6 VGS = 0V 2.4 I D = 0.8A 2.2 RDS(on) - Normalized RDS(on) - Normalized 2.2 1.8 1.4 1.0 VGS = 0V 5V 2.0 o TJ = 125 C 1.8 1.6 1.4 1.2 o TJ = 25 C 1.0 0.6 0.8 0.2 0.6 -50 -25 0 25 50 75 100 125 0 150 0.5 1 1.5 2 2.5 3 I D - Amperes TJ - Degrees Centigrade Fig. 10. Transconductance Fig. 9. Input Admittance 2.2 2.5 2.0 VDS = 30V VDS = 30V o TJ = - 40 C 1.8 2.0 g f s - Siemens I D - Amperes 1.6 1.5 o TJ = 125 C 1.0 o 25 C o - 40 C o 1.4 25 C 1.2 125 C o 1.0 0.8 0.6 0.5 0.4 0.2 0.0 0.0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.3 1.5 2 2.5 I D - Amperes VGS - Volts Fig. 12. Forward Voltage Drop of Intrinsic Diode 5 VGS= -10V 4 VGS(off) @ VDS = 25V I S - Amperes BV / VGS(off) - Normalized 1.2 1.1 BVDSX @ VGS = - 5V 1.0 3 2 o TJ = 125 C o 1 0.9 TJ = 25 C 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTA1R6N100D2HV Fig. 13. Capacitance f = 1 MHz VDS = 500V 4 1,000 I D = 0.8A 3 Ciss I G = 1mA 2 100 1 V GS - Volts Capacitance - PicoFarads Fig. 14. Gate Charge 5 10,000 Coss 0 -1 -2 10 -3 C rss -4 -5 1 0 5 10 15 20 25 30 35 0 40 5 10 VDS - Volts 20 25 Fig. 16. Forward-Bias Safe Operating Area Fig. 15. Forward-Bias Safe Operating Area @ TC = 25oC 10 15 QG - NanoCoulombs @ TC = 75oC 10 RDS(on) Limit RDS(on) Limit 25μs 100μs 1 1ms 10ms 100ms 0.1 100μs I D - Amperes I D - Amperes 1 1ms 10ms 0.1 DC 100ms o TC = 75 C Single Pulse o 10.00 0.01 10 DC o TJ = 150 C o TJ = 150 C TC = 25 C Single Pulse Fig. 17. Maximum Transient Thermal Impedance 0.01 100 10 1,000 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance hvjv 2.00 Z (th)JC - K / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1R6N100D2(2C)8-24-09 IXTA1R6N100D2HV TO-263HV Outline E A L1 C2 D1 D 1 D2 H 3 E1 A1 2 L4 b2 L3 GAUGE PLANE b e1 0.43 [11.0] c 0o 8o A2 e2 1 = Gate 2 = Source 3 = Drain 0.34 [8.7] 0.20 [5.0] 0.66 [16.7] 0.12 [3.0] 0.10 [2.5] 0.06 [1.6] MINIMUM PCB FOOT PRINT LAYOUT IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA1R6N100D2HV Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved