IXTA3N100P

IXTA3N100P IXTP3N100P IXTH3N100P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 1000V = 3A  4.8  TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 6 A IA TC = 25C 3 A EAS TC = 25C 200 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 125 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G D S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)   BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)  Characteristic Values Min. Typ. Max. V 4.5 V 50 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 5 250 A μA Applications    4.8    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99767B(6/18) IXTA3N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 1.5 Ciss Coss tr td(off) tf 2.4 S 1100 pF 70 pF 14.5 pF 22 ns 27 ns 75 ns 29 ns 36 nC 9 nC 13 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 18 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 1.0 C/W RthJC RthCS IXTP3N100P IXTH3N100P TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 3 A ISM Repetitive, pulse Width Limited by TJM 9 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 3A, -di/dt = 100A/μs 820 ns VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA3N100P IXTP3N100P IXTH3N100P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 3.0 VGS = 10V 7V VGS = 10V 7V 5 4 6V 2.0 I D - Amperes I D - Amperes 2.5 1.5 1.0 0.5 3 6V 2 1 5V 5V 0.0 0 0 2 4 6 8 10 12 0 5 10 15 3.0 3.0 VGS = 10V 7V 30 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 2.0 6V 1.5 1.0 5V 0.5 2.2 I D = 3A 1.8 I D = 1.5A 1.4 1.0 0.6 0.0 0.2 0 4 8 12 16 20 24 -50 28 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 2.6 Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 2.4 VGS = 10V 2.8 o TJ = 125 C 2.2 2.4 2.0 I D - Amperes RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.5 20 VDS - Volts VDS - Volts 1.8 1.6 1.4 2.0 1.6 1.2 0.8 1.2 o TJ = 25 C 1.0 0.4 0.8 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 4.0 4.5 5.0 5.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA3N100P IXTP3N100P IXTH3N100P Fig. 8. Transconductance Fig. 7. Input Admittance 4.0 4.5 3.5 4.0 o 3.5 2.5 g f s - Siemens 3.0 I D - Amperes TJ = - 40 C o TJ = 125 C o 25 C o - 40 C 2.0 1.5 o 3.0 25 C 2.5 2.0 o 125 C 1.5 1.0 1.0 0.5 0.5 0.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 6.5 0.5 1.0 1.5 VGS - Volts 9 10 8 9 3.0 3.5 4.0 30 35 40 VDS = 500V I D = 1.5A 8 7 I G = 1mA 7 6 VGS - Volts I S - Amperes 2.5 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 5 4 o TJ = 125 C 3 6 5 4 3 o TJ = 25 C 2 2 1 1 0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0 0.9 5 10 VSD - Volts 15 20 25 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10 10,000 1ms f = 1 MHz 100μs 10ms RDS(on) Limit 1,000 I D - Amperes Capacitance - PicoFarads 2.0 I D - Amperes Ciss Coss 100 1 o TJ = 150 C o TC = 25 C Single Pulse Crss 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTA3N100P IXTP3N100P IXTH3N100P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N100P(3C) 04-03-08-A IXTA3N100P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP3N100P IXTH3N100P Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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