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IXTA2N100P

IXTA2N100P

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 1000V 2A TO-263

  • 数据手册
  • 价格&库存
IXTA2N100P 数据手册
IXTY2N100P IXTA2N100P IXTP2N100P PolarTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 2A  7.5  N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 5 A IA TC = 25C 2 A EAS TC = 25C 150 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 86 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXTP) GD G = Gate S = Source      BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 100μA 2.5 4.5 D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Characteristic Values Min. Typ. Max. D (Tab) Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S  High Power Density Easy to Mount Space Savings V Applications V  DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Lasers Drivers  Robotics and Servo Controls  IGSS VGS = 20V, VDS = 0V 50 nA IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 5 A 250 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 6.0 7.5  DS99817C(8/17) IXTY2N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max VDS = 20V, ID = 0.5 • ID25, Note 1 1.00 1.7 S 655 pF 44 pF 9.2 pF 24.3 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf 4.4 nC 12.6 nC 25 ns 29 ns 80 ns 27 ns Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 25 (External) 1.45 C/W RthJC RthCS IXTA2N100P IXTP2N100P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 2 A ISM Repetitive, Pulse Width Limited by TJM 6 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 2A, -di/dt = 100A/μs, VR = 100V 800 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY2N100P o o Fig. 1. Output Characteristics @ TJ = 25 C 2.0 Fig. 2. Extended Output Characteristics @ TJ = 25 C 3.2 VGS = 10V 7V 1.8 IXTA2N100P IXTP2N100P VGS = 10V 7V 2.8 1.6 2.4 6V I D - Amperes I D - Amperes 1.4 1.2 1.0 0.8 2.0 6V 1.6 1.2 0.6 0.8 0.4 5V 5V 0.4 0.2 0.0 0.0 0 2 4 6 8 10 12 14 16 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.2 2.0 VGS = 10V 7V 1.8 VGS = 10V 2.8 I D - Amperes 1.4 RDS(on) - Normalized 1.6 6V 1.2 1.0 . 0.8 5V 0.6 2.4 I D = 2A 2.0 I D = 1A 1.6 1.2 0.4 0.8 0.2 0.0 0.4 0 5 10 15 20 25 30 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current 2.6 2.4 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.0 o 1.8 2.2 1.6 2.0 I D - Amperes RDS(on) - Normalized 50 2.2 TJ = 125 C VGS = 10V 25 TJ - Degrees Centigrade 1.8 1.6 o 1.4 TJ = 25 C 1.4 1.2 1.0 0.8 0.6 1.2 0.4 1.0 0.2 0.0 0.8 0 0.5 1 1.5 2 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 2.5 3 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY2N100P IXTA2N100P IXTP2N100P Fig. 8. Transconductance Fig. 7. Input Admittance 2.4 3.5 o TJ = - 40 C 3.0 2.5 1.6 g f s - Siemens I D - Amperes 2.0 o TJ = 125 C 1.2 o 25 C o - 40 C 0.8 o 25 C 2.0 o 125 C 1.5 1.0 0.4 0.5 0.0 0.0 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 0 6.2 0.4 0.8 1.2 VGS - Volts 2 2.4 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 6 1.6 I D - Amperes 10 5 9 VDS = 500V 8 I D = 1A I G = 10mA 7 VGS - Volts I S - Amperes 4 3 o TJ = 125 C 2 6 5 4 3 o TJ = 25 C 2 1 1 0 0.40 0 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0 0.95 5 VSD - Volts 15 20 25 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10 QG - NanoCoulombs 10 1 100 Coss Z(th)JC - K / W Capacitance - PicoFarads Ciss 10 0.1 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTY2N100P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source L2 3 b2 A1 6.40 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION © 2017 IXYS CORPORATION, All Rights Reserved A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW 2 E D1 D H IXTA2N100P IXTP2N100P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS REF: T_2N100P(2C) 4-03-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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