IXTA48P05T

IXTY48P05T IXTA48P05T IXTP48P05T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 50V - 48A  30m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 50 V VDGR TJ = 25C to 150C, RGS = 1M - 50 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 48 A IDM TC = 25C, Pulse Width Limited by TJM -150 A IA EAS TC = 25C TC = 25C - 48 300 A mJ PD TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 50 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA - 10 A - 250 A 30 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100293C(8/17) IXTY48P05T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = - 30V, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 26 S 3660 pF 495 pF 215 pF 20 ns 15 ns 30 ns 13 ns 53 nC 16 nC 21 nC 0.83 C/W RthJC RthCS IXTA48P05T IXTP48P05T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 48 A ISM Repetitive, Pulse Width Limited by TJM -192 A VSD IF = IS, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 25V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 30 43.4 - 2.8  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY48P05T o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -48 -180 VGS = -10V VGS = -10V - 9V -160 -40 - 8V -32 -120 - 7V -24 - 6V -16 - 9V -140 I D - Amperes I D - Amperes IXTA48P05T IXTP48P05T - 8V -100 - 7V -80 -60 - 6V -40 -8 - 5V - 5V -20 - 4V - 4V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 0 -1.6 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = - 24A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 1.6 -48 VGS = -10V - 9V VGS = -10V 1.5 -40 - 8V -32 1.4 RDS(on) - Normalized I D - Amperes -20 VDS - Volts VDS - Volts - 7V -24 - 6V -16 - 5V I D = - 48A 1.3 1.2 I D = - 24A 1.1 1.0 0.9 -8 0.8 - 4V 0 0.7 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = - 24A Value vs. Drain Current 1.9 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature -55 VGS = -10V -45 o TJ = 125 C I D - Amperes RDS(on) - Normalized 1.7 1.5 1.3 -35 -25 -15 o TJ = 25 C 1.1 -5 0.9 0 -20 -40 -60 -80 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -100 -120 -140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY48P05T Fig. 7. Input Admittance IXTA48P05T IXTP48P05T Fig. 8. Transconductance 40 -60 o -50 30 o TJ = 125 C -40 o 25 C o - 40 C g f s - Siemens I D - Amperes TJ = - 40 C 35 -30 -20 o 25 C 25 o 125 C 20 15 10 -10 5 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -10 -20 -30 -40 -50 -60 -70 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -160 -10 VDS = - 27.5V I D = - 24A I G = -1mA -9 -140 -8 -120 VGS - Volts I S - Amperes -7 -100 -80 -60 o TJ = 125 C -6 -5 -4 -3 -40 o -2 TJ = 25 C -20 -1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -1.8 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1,000 10,000 RDS(on) Limit Ciss - 100 I D - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss 25μs 100μs 1ms - 10 10ms o TJ = 150 C 100ms o TC = 25 C Single Pulse Crss DC -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTY48P05T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 15.5 IXTA48P05T IXTP48P05T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 16.0 RG = 3Ω, VGS = -10V RG = 3Ω, VGS = -10V VDS = - 30V VDS = - 30V 15.5 t r - Nanoseconds t r - Nanoseconds 15.0 I D = - 48A 14.5 I D = - 24A 15.0 o TJ = 25 C 14.5 14.0 o TJ = 125 C 14.0 13.5 13.0 13.5 25 35 45 55 65 75 85 95 105 115 -24 125 -28 -32 -36 tr 24 18 27 td(on) 26 o 16 22 14 21 12 20 10 19 8 t f - Nanoseconds t r - Nanoseconds 23 I D = - 24A, - 48A 4 5 6 7 8 9 10 11 12 13 14 34 15 32 14 13 28 12 26 25 15 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 41 35 38 30 td(off) tf RG = 3Ω, VGS = -10V t f - Nanoseconds 13 29 12 26 10 23 5 11 I D - Amperes -40 © 2017 IXYS CORPORATION, All Rights Reserved -44 -48 50 I D = - 24A 20 32 -36 60 25 14 -32 td(off) o 40 15 30 I D = - 48A 20 10 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 35 o TJ = 25 C, 125 C -28 70 VDS = - 30V t d(off) - Nanoseconds o 24 125 TJ = 125 C, VGS = -10V VDS = - 30V t f - Nanoseconds 45 TJ - Degrees Centigrade 16 -24 35 RG - Ohms 17 15 30 I D = - 48A, - 24A 11 18 3 16 t d(off) - Nanoseconds 24 36 VDS = - 30V t d(on) - Nanoseconds 20 td(off) RG = 3Ω, VGS = -10V 25 VDS = - 30V 18 -48 38 tf 17 TJ = 125 C, VGS = -10V 22 -44 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 26 -40 I D - Amperes TJ - Degrees Centigrade IXTY48P05T IXTA48P05T IXTP48P05T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_48P05T(A2-P05) 10-18-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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