IXTQ36N50P

PolarHVTM Power MOSFET IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 500 V = 36 A ≤ 170 mΩ Ω TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 VGS Continuous ±30 V VGSM Transient ±40 V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 36 108 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 36 50 1.5 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 3 Ω 10 V/ns PD TC = 25° C 540 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque(TO-247) FC Mounting force (PLUS220) Weight TO-247 TO-268 PLUS220 TO-3P G D (TAB) S TO-247 (IXTH) (TAB) TO-268 (IXTT) G S D (TAB) PLUS220 (IXTV) 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25° C unless otherwise specified) 20..120/4.5..15 N/lb 6 5 2 5.5 g g g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 250 µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V V TJ = 125° C V 5.0 V ±100 nA 25 250 µA µA 170 mΩ G D D (TAB) S PLUS220 SMD(IXTV..S) G G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect DS99228E(01/06) IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV36N50P IXTV 36N50PS Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 23 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 36 S 5500 pF 510 pF Crss 40 pF td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns td(off) RG = 3 Ω (External) 75 ns tf 21 ns Qg(on) 85 nC 30 nC 31 nC VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd 0.23 ° C/W RthJC (TO-247 and TO-3P) (PLUS220) RthCS ° C/W ° C/W 0.21 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 108 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 400 ns Characteristic Curves Fig. 2. Exte nde d Output Char acte r is tics Fig. 1. Output Char acte r is tics @ 25 º C @ 25 º C 36 80 V GS = 10V 32 8V 7V 60 24 I D - Amperes I D - Amperes 28 V GS = 10V 70 8V 7V 6V 20 16 12 5.5V 6.5V 40 6V 30 20 8 4 50 5.5V 10 5V 0 5V 0 0 1 2 3 4 5 6 7 0 2 4 6 V D S - V olts 8 10 12 14 V D S - V olts 16 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 18 20 22 24 IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXT V36N50P IXTV 36N50PS Fig. 3. Output Char acte r is tics @ 125ºC Fig. 4. RDS(on ) Nor m alize d to ID = 18A V alue vs . Junction Te m pe r atur e 36 3.1 V GS = 10V 32 R D S ( o n ) - Normalized 28 I D - Amperes 2.8 7V 6V 24 20 5.5V 16 12 5V 8 4.5V 4 V GS = 10V 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 V D S - V olts 14 16 -50 -25 75 100 125 150 40 V GS = 10V 35 30 TJ = 125ºC 2.6 I D - Amperes R D S ( o n ) - Normalized 50 Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e ID = 18A V alue vs . Dr ain Cur r e nt 3 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 3.4 0 2.2 1.8 1.4 25 20 15 10 TJ = 25ºC 1 5 0 0.6 0 10 20 30 40 50 60 I D - A mperes 70 -50 80 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 80 90 Fig. 8. Tr ans conductance Fig. 7. Input Adm ittance 55 70 50 45 - Siemens 35 30 20 TJ = 125ºC fs 25 15 25ºC -40ºC g I D - Amperes 40 10 60 TJ = -40ºC 50 25ºC 125ºC 40 30 20 10 5 0 0 4 4.5 5 5.5 V G S - V olts © 2006 IXYS All rights reserved 6 6.5 7 0 10 20 30 40 50 60 I D - A mperes 70 IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV36N50P IXTV 36N50PS Fig. 10. Gate Char ge 100 10 90 9 V DS = 250V 80 8 I D = 18A 70 7 I G = 10m A V G S - Volts I S - Amperes Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage 60 50 40 TJ = 125ºC 30 6 5 4 3 20 2 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 10 20 V S D - V olts 30 Q G 40 50 60 70 80 90 100 - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Are a Fig. 11. Capacitance 10000 1000 TJ = 150ºC TC = 25ºC R DS(on) Lim it 1000 I D - Amperes Capacitance - picoFarads C is s C oss 100 100 25µs 100µs 10 1m s 10m s DC f = 1MH z C rs s 10 1 0 5 10 15 20 25 V D S - V olts 30 35 40 10 100 1000 V D S - V olts Fig. 13. Maximum Transient Thermal Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS TO-3P (IXTQ) Outline TO-247 AD (IXTH) Outline 1 2 TO-268 (IXTT) Outline 3 Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXTV_S) Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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