CJ4459

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ4459 P-Channel MOSFET V(BR)DSS ID RDS(on)MAX   -30 V SOT-23 46mΩ@-10V  -5A 72mΩ@-4.5V   3 1. GATE 1 2 2. SOURCE DESCRIPTION The CJ4459 combines advanced trench MOSFET technology 3. DRAIN with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Equivalent Circuit MARKING 4459 = Device cod e 4459 Solid dot = Green molding compound device, if none, the normal device MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -5.0 A Pulsed Drain Current (note 1) IDM -30 A Power Dissipation (note 2) PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ 150 ℃ Thermal Resistance from Junction to Ambient (t ≤10s) (note 2) www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =-250µA -2.0 -2.4 V Drain-source on-resistance (note 3) RDS(on) VGS =-10V, ID =-5A 35 46 mΩ VGS =-4.5V, ID =-5A 55 72 mΩ 14 Forward tranconductance (note 3) gFS VDS =-5V, ID =-5A Diode forward voltage (note 3) VSD IS=-1A, VGS = 0V -30 -1.4 V S -1 V 415 625 pF 70 130 pF 40 90 pF DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =-15V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time 7.5 ns VGS=-10V,VDS=-15V, 5.5 ns RL=2.5Ω,RGEN=3Ω 19 ns 7 ns td(on) tr td(off) Turn-off fall time tf Total Gate Charge (10V) Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-15V,VGS =-10V,ID=-5A 7.4 11 nC 1.3 1.9 nC 1.3 3.1 nC Notes : 1. Repetitive rating : Pulse width limited by junction temperature TJ(MAX)=150℃. Ratings are based on low frequency and duty cycles to keep initial TJ=25℃.The power dissipation PD is based on TJ(MAX) =150℃, using ≤10s junction-to-ambient thermal resistance. 2. The value in any given application depends on the user’s specific board design. 3. Pulse Test: Pulse Width≤300µs, Duty Cycle≤0.5%. 4. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics -24 Pulsed -20 -4.5V -8.0V VDS= -5V -6.0V (A) -20 -12 DRAIN CURRENT DRAIN CURRENT -15 ID -16 ID (A) Pulsed -4.0V VGS=-3.5V -8 -10 Ta=100℃ -5 Ta=25℃ -4 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 100 -5 VDS -0 -6 -0 (V) -1 -2 -3 -4 GATE TO SOURCE VOLTAGE ID RDS(ON) 100 —— VGS VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) 80 80 RDS(ON) VGS= -4.5V 60 ON-RESISTANCE RDS(ON) (mΩ) Pulsed ON-RESISTANCE -5 (V) 40 VGS= -10V 60 ID= -5A 40 20 20 0 -4 -8 -12 DRAIN CURRENT -16 ID -2 -20 (A) IS —— VSD -10 -4 -6 -8 GATE TO SOURCE VOLTAGE VGS -10 (V) Threshold Voltage -2.1 Ta=25℃ VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed -1 -0.1 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.0 -2.0 ID= -250uA -1.9 -1.8 25 -1.2 VSD (V) 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 ( ℃) Rev. - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b c D E E1 e e1 L L1  Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0°° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 6277DSHDQG5HHO SOT-23 Embossed Carrier Tape P0 d P1 Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). B W A F E C A A P A-A Dimensions are in millimeter Pkg type A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 SOT-23 Tape Leader and Trailer Trailer Tape Leader Tape 100±2 Empty Pockets Components 50±2 Empty Pockets SOT-23 Reel D I G W2 3000 H 2500 2000 1500 1000 D2 D1 500 W1 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 G.W.(kg) REEL 3000 pcs www.jscj-elec.com Reel Size Box 7 inch 30,000 pcs Box Size(mm) Carton Carton Size(mm) 203×203×195 120,000 pcs 438×438×220 5 Rev. - 1.0