MMBTH10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T MMBTH10 TRANSISTOR (NPN) SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 50 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 3 V Collector cut-off current ICBO VCB=25V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=2V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC=4mA VCE(sat) IC=4mA, IB=0.4mA 0.5 V Base-emitter voltage VBE VCE=10V, IC=4mA 0.95 V Transition frequency fT Collector-emitter saturation voltage Collector output capacitance www.cj-elec.com Cob VCE=10V,IC=4mA f=100MHz VCB=10V, IE=0, f=1MHz 1 60 650 MHz 0.7 pF C,Oct,2014 A,Jun,2014 Typical Characteristics hFE Static Characteristic 1000 10 45uA hFE 40uA DC CURRENT GAIN (mA) IC 50uA 6 COLLECTOR CURRENT IC COMMON EMITTER VCE=10V COMMON EMITTER Ta=25℃ 8 —— 35uA 30uA 4 25uA 20uA Ta=100℃ Ta=25℃ 100 15uA 2 10uA IB=5uA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 1 —— 10 VCE 12 1 50 COLLECTOR CURRENT IC VBEsat 1.0 IC —— (mA) IC β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 10 (V) 0.1 Ta=100℃ Ta=25℃ 0.01 0.1 1 10 COLLECTOR CURRENT IC —— IC 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 0.1 50 1 (mA) 10 COLLECTOR CURRENT Cob/ Cib VBE —— f=1MHz IE=0/IC=0 Ta=25℃ Ta=100℃ (pF) 10 Cib C CAPACITANCE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=10V Ta=25℃ 1 0.1 0.2 0.4 0.6 0.8 1 Cob 0.1 0.1 1.0 IC PC 270 900 fT (MHz) —— REVERSE VOLTAGE COLLECTOR POWER DISSIPATION PC (mW) fT 1200 3 1 0.3 BASE-EMMITER VOLTAGE VBE (V) TRANSITION FREQUENCY 50 (mA) VCB/ VEB 10 50 IC 600 300 COMMON EMITTER VCE=10V —— V 10 20 (V) Ta 225 180 135 90 45 Ta=25℃ 0 1 COLLECTOR CURRENT www.cj-elec.com 0 3 10 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 C,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 C,Oct,2014 A,Jun,2014