MMBT5550

S MD Type High Voltage Transistors MMBT5550 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features NPN Silicon +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current -continuous Total device dissipation FR-5 board *1 @TA = 25 Derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate *2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. RèJA TJ, Tstg PD 300 2.4 417 -55 to +150 mW mW/ /W RèJA PD 225 1.8 556 mW mW/ /W Symbol VCEO VCBO VEBO IC Rating 140 160 6 600 Unit V V V mA +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type MMBT5550 Electrical Characteristics Ta = 25 Parameter Collector?emitter breakdown voltage * Collector?base breakdown voltage Emitter ?base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Testconditons Transistors Min 140 160 6 Typ Max Unit V V V V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO IC = 100 ìA, IE = 0 V(BR)EBO IE = 10 ìA, IC = 0 ICBO IEBO VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, Ta = 100 VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 5 V 100 100 50 60 60 20 0.15 0.25 1.0 1.2 50 100 250 nA ìA nA DC current gain hFE IC = 10 mA, VCE = 5 V IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA V V V V nA nA Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA Collector emitter cut-off ICES VCB = 10 V VCB = 75 V * Pulse Test: Pulse Width = 300 ìs, Duty Cycle=2.0%. Marking Marking M1F 2 www.kexin.com.cn