LN2324DT2AG

LN2324DT2AG S-LN2324DT2AG 20V N-Channel (D-S) MOSFET 1. FEATURES ● VDS =20V RDS(ON)≤10.5mΩ,VGS@4.5V,IDS@10A RDS(ON)≤12.5mΩ,VGS@2.5V,IDS@8A ● Low RDS(ON) trench technology. ● Low thermal impedance. ● Fast switching speed. ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS Power Routing ● Level Shifting and Driver Circuits ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LN2324DT2AG AN 4000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current(Note 1) TA = 25℃ Pulsed Drain Current(Note 2) Continuous Source Current (Diode Conduction)(Note 1) Power Dissipation(Note 1) TA = 25℃ TA = 70℃ Operating Junction and Storage Temperature Range Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. V 14 ID TA = 70℃ Unit 11 IDM 60 IS 2.9 3 PD 1.9 TJ , Tstg -55~+150 A W ℃ 5. THERMAL CHARACTERISTICS Symbol Parameter Maximum Junction-to-Ambient (Note 1) Leshan Radio Company, LTD. t≤10S Steady State Rev.O Dec. 2016 RθJA Max 40 90 Unit ºC/W 1/5 LN2324DT2AG,S-LN2324DT2AG 20V N-Channel (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit VGS(th) 0.4 - 1 V IGSS - - ±100 nA IDSS - - µA - - 1 10 ID(ON) 20 - - A RDS(ON) - - mΩ - - 10.5 12.5 gfs - 5 - S VSD - 0.74 - V Qg - 20 - Qgs - 3.6 - Qgd - 5.5 - Static Gate-Source Threshold Voltage (VDS =VGS , ID =250μA ) Gate-Body Leakage (VDS =0V, VGS =±8V ) Zero Gate Voltage Drain Current (VDS = 16 V, VGS = 0 V) (VDS = 16 V, VGS = 0 V, TJ = 55°C) On-State Drain Current(Note 3) (VDS = 5 V, VGS = 4.5 V) Drain-Source On-Resistance(Note 3) (VGS = 4.5 V, ID = 10 A) (VGS = 2.5 V, ID = 8 A) Forward Transconductance(Note 3) (VDS = 15 V, ID = 10 A) Diode Forward Voltage(Note 3) (IS = 1.4 A, VGS = 0 V) DYNAMIC(Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 10 V, VGS = 4.5 V,ID = 10 A) (VDS = 15 V, VGS = 0 V, f = 1 Output Capacitance MHz) Reverse Transfer Capacitance Ciss - 1920 - Coss - 160 - Crss - 143 - Turn-On Delay Time td(on) - 6 - tr - 14 - td(off) - 84 - - 24 - Input Capacitance Turn-On Rise Time Turn-Off Delay Time (VDS = 10 V, RL = 1 Ω,ID = 10 A,VGEN = 4.5 V, RGEN = 6 Ω) tf Turn-Off Fall Time Note: 3. Pulse test; pulse width≤ 300µs, duty cycle≤ 2%. 4. Guaranteed by design, not subject to production testing. Leshan Radio Company, LTD. Rev.O Dec. 2016 nC pF ns 2/5 LN2324DT2AG,S-LN2324DT2AG 20V N-Channel (D-S) MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES 10 0.03 8 0.02 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 1.5V 1.8V 0.01 6 4 2 1.8V,2V,2.5V,3V,3.5V,4V,4.5V,6V 0 0 0 5 10 0 15 ID-Drain Current (A) 2 3 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.06 10 TJ = 25°C ID = 10A 0.05 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.04 0.03 0.02 1 0.1 0.01 0 0.01 0 2 4 6 0.2 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 15 4000 F = 1MHz 6V,4.5V,4V,3.5V, 3V,2.5V,2V 3500 3000 1.8V Capacitance (pf) ID - Drain Current (A) 0.4 10 1.5V 5 2500 Ciss 2000 1500 1000 500 0 Coss Crss 0 0 0.1 0.2 0.3 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics Leshan Radio Company, LTD. 0 6. Capacitance Rev.O Dec. 2016 3/5 LN2324DT2AG,S-LN2324DT2AG 20V N-Channel (D-S) MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) 2 VDS = 10V ID = 10A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 8 6 4 2 0 1.5 1 0.5 0 10 20 30 40 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 60 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC 1 0.1 DC Idm limit 50 40 30 20 10 Limited by RDS 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 0.05 0.02 RθJA = 90 °C /W P(pk) t1 t2 Single Pulse 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient Leshan Radio Company, LTD. Rev.O Dec. 2016 4/5 LN2324DT2AG,S-LN2324DT2AG 20V N-Channel (D-S) MOSFET 8.OUTLINE AND DIMENSIONS DFN2020-6S DIM MIN NOR MAX A 0.60 0.65 0.70 A1 0.01 0.03 0.05 b 0.25 0.30 0.35 D 1.95 2.00 2.05 E 1.95 2.00 2.05 e 0.65TYP. L 0.23 0.28 0.33 L1 0.60 0.65 0.65 D1 0.90 0.95 1.00 E1 1.10 1.15 1.20 A3 0.152REF All Dimensions in mm 9.SOLDERING FOOTPRINT DFN2020-6S Dim (mm) X 0.40 X1 0.95 X2 1.70 e 0.65 Y 0.43 Y1 0.75 Y2 1.15 Y3 1.54 Y4 2.39 Leshan Radio Company, LTD. Rev.O Dec. 2016 5/5