MCU80N06-TP

MCU80N06 Features • • • Fast Switching Improved dv/dt Capability Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • Thermal Resistance: 1.76°C/W Junction to Case(Note 1) Parameter DPAK Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Volltage VGS ±20 V 80 A 56 A IDM 150 A EAS 290 mJ PD 85 W Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current Single Pulse Avalanche Energy Total Power Dissipation (Note 2) ID J H 1 C I G S Rev.3-4-12012020 1/4 F E M Q A G L A B C D E F G H I J K L M O Q V 1.GATE 2.DRAIN 3.SOURCE 4.DRAIN V K DIM D 4 3 Note: 1.Surface Mounted on FR4 Board, t≤10 sec. 2.EAS Condition: TJ=25°C,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω. Internal Structure O 2 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 D B NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU80N06 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Drain-Source Breakdown Voltage Gate-Threshold Voltage(Note 3) VGS(th) VDS=VGS, ID=250µA Drain-Source On-Resistance(Note 3) RDS(on) VGS=10V, ID=30A gFS VDS=10V, ID=5.5A Forward Tranconductance(Note 3) 60 1 V ±100 nA 1 µA 1.6 2.4 V 11.3 13 mΩ 30 S Dynamic Characteristics(Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 80 Total Gate Charge Qg 36 Gate-Source Charge Qgs Gate-Drain Charge Qgd 6.6 Turn-On Delay Time td(on) 12 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 2498 VDS=25V,VGS=0V,f=1MHz VDS=30V,VGS=10V,ID=30A VDD=30V,ID=2A,RL=1Ω VGS=10V,RGEN=3Ω tf pF 185 nC 9.6 5.2 ns 38 27 Drain-Source Body Diode Characteristics Continuous Body Diode Current IS 80 A 1.4 V Body Diode Voltage(Note 3) VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ=25°C, IF=30A, di/dt=100A/μs(Note 3) Forward Turn-On Time ton Intrinsic Turn-On Time is Negligible (Turn-On is Dominated by LS+LD) IS=20A, VGS=0V 280 ns 2.8 µC Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-4-12012020 2/4 MCCSEMI.COM MCU80N06 Curve Characteristics Fig. 2 - Transfer Characteristics Fig. 1 - Typical Output Characteristics 100 140 VDS= 5V 10V 120 7V 80 Drain Current (A) Drain Current (A) 100 5V 80 60 60 40 TJ=125°C 40 6V 20 TJ=25°C 20 VGS=4.5V 0 0 0 1 2 3 4 0 5 1 2 Drain To Source Voltage (V) Fig. 3 - Capacitance Characteristics 4 5 Fig. 4 - Gate Charge Characteristics 3000 10 VDS=30V Ciss ID=30A Gate-Source Voltage (V) 2500 Capacitance (pF) 3 Gate To Source Voltage (V) 2000 1500 Coss 1000 8 6 4 2 500 Crss 0 0 10 20 30 40 50 0 60 0 6 12 Drain To Source Voltage (V) 18 24 30 36 Gate Charge(nC) Fig. 5 - RDS(ON)—ID Fig. 6 - Normalized On Resistance Characteristics 2.2 20 Normalized On Resistance Drain-Source On-Resistance (mΩ) VGS=10V 2.0 15 VGS=10V 10 ID=30A 1.8 1.6 1.4 1.2 1.0 5 0.8 0 20 40 60 80 Drain Current (A) Rev.3-4-12012020 0 25 50 75 100 125 150 175 200 Junction Temperature(°C) 3/4 MCCSEMI.COM MCU80N06 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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