MCU90N02-TP

MCU90N02 Features • • • Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Desihn for Low RDS(on) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • Thermal Resistance: 3.3°C/W Junction to Case DPAK J H Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Volltage VGS ±10 V 90 A 63 A Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current (Note 1) IDM 225 A Single Pulse Avalanche Energy (Note 2) EAS 205 mJ 45 W 23 W Total Power Dissipation TC=25°C TC=100°C PD D S Rev.3-2-12012020 I 1.GATE 2.DRAIN 3.SOURCE 4.DRAIN 1/4 4 F E 3 V K M Q A G L A B C D E F G H I J K L M O Q V Internal Structure O 2 DIM Note:1. Pulse Test: Pulse Width≤300µs,Duty Cycle ≤2%. 2.TJ=25°C, VDD=15V, VG=10V, L=0.5mH, Rg=25Ω. G 1 C DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 D B NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU90N02 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±10V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistance Diode Forward Voltage Continuous Body Diode Current VGS(th) RDS(on) VSD 20 V ±100 nA 1 µA 0.62 1 V VGS=4.5V, ID=20A 2.8 4.5 VGS=2.5V, ID=15A 3.3 5 VGS=1.8V, ID=10A 4.7 7.5 VGS=0V, IS=20A 0.8 1.2 V 90 A VDS=VGS, ID=250µA 0.4 IS mΩ Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 275 Total Gate Charge Qg 105 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr Reverse Recovery Time trr 35 Turn-On Delay Time td(on) 12 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Rev.3-2-12012020 3250 VDS=10V,VGS=0V,f=1MHz VDS=10V,VGS=4.5V,ID=15A 580 pF 25 nC 21 IS=15A, di/dt=100A/µs VGS=4.5V,VDD=10V, ID=10A,RL=1Ω RGEN=3Ω tf 39 26 ns 35 10 2/4 MCCSEMI.COM MCU90N02 Curve Characteristics Fig. 2 - Transfer Characteristics Fig. 1 - Output Characteristics 60 60 VDS= 5V Pulesd 50 50 40 30 Drain Current (A) Drain Current (A) VGS=10V,4.0V VGS=2.0V 20 40 TA=125°C 30 TA=25°C 20 10 10 VGS=1.5V 0 0 1 2 3 4 0 0.0 5 0.5 1.0 2.0 2.5 Fig. 4 - Gate Charge Fig. 3 - Capacitance Characteristics 5 4000 4 Gate to Source Voltage (V) 5000 Ciss Capacitance (pF) 1.5 Gate to Source Voltage (V) Drain to Source Voltage (V) 3000 2000 Coss 1000 3 VDS= 10V 2 1 Crss 0 0 5 10 15 20 0 25 0 20 40 Fig. 5 - RDS(ON)—ID 80 100 120 Fig. 6 - RDS(ON)—Temperature 5 2.2 2.0 Normalized On-Resistance Drain-Source On-Resistance (mΩ) 60 Gate Charge (nC) Drain to Source Voltage (V) 4 VGS=4.5V 3 1.8 1.6 1.4 1.2 1.0 0.8 2 0.6 0 10 20 30 40 50 60 Rev.3-2-12012020 0 25 50 75 100 125 150 175 Junction Temperature (°C) Drain Current (A) 3/4 MCCSEMI.COM MCU90N02 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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