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MRF5812R1

MRF5812R1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

    SOT96-1

  • 描述:

    COMM/BIPOLAR TRANSISTOR

  • 数据手册
  • 价格&库存
MRF5812R1 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.25 10 Watts mW/ ºC MSC1319.PDF 10-25-99 MRF5812, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) Collector Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) 15 30 2.5 Value Typ. Max. 0.1 0.1 Unit Vdc Vdc Vdc mA mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 200 DYNAMIC Symbol COB Ftau Test Conditions Min. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Typ. 1.4 5.0 Max. 2.0 Unit pF GHz MSC1319.PDF 10-25-99 MRF5812, R1, R2 FUNCTIONAL Symbol Test Conditions Min. NFmin Minimum Noise Figure (IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz) Power Gain @ Nfmin (IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz) Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Maximum Stable Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz Insertion Gain IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz 13 Value Typ. 2.0 15.5 17.8 20 15 Max. 3.0 Unit dB dB dB dB dB G G NF U max MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 (MHz) 100 300 500 1000 2000 3000 |S11| .579 .593 .598 .592 .615 .691 ∠φ -141 -173 175 158 115 72 S21 |S21| 24 8.93 5.14 2.64 1.55 1.10 ∠φ 107 85 74 52 20 -5 S12 |S12| .024 .045 .066 .132 .310 .518 ∠φ 49 66 69 72 63 41 S22 |S22| .397 .233 .248 .347 .531 .648 ∠φ -76 -103 -110 -119 -141 -172 MSC1319.PDF 10-25-99 MRF5812, R1, R2 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) (MHz) Pout (watts) Efficiency (%) IC max (mA) Gu Max (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 0.45 1 1 1 17 10 10 12 15 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 100 70 35 30 Freq (MHz) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 P O W ER MA C R O P O W ER MA C R O MA C R O X MA C R O X SO-8 P O W ER MA C R O P O W ER MA C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 1000 1000 1000 1000 NF (dB) NF IC (mA) NF VCE GNF (dB) Package Device 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 6 6 5 10 15 11 14 10 8 10 15.5 14 15 11 12 11.4 15 17 13 5.5 11 14 16.5 14.5 17.8 15 18 20 15 17.8 14.5 17 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 MACRO X MACRO X MACRO T MACRO T M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 11 12.5 5000 5000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 13.5 1400 1500 Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type Type 2 70 70 400 400 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide 1 1 2 3 4 4 3 3 2 1 4 1 8 RF Low Pow MSC1319.PDF 10-25-99 MRF5812, R1, R2 PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER 8. 5. 1. 4. MSC1319.PDF 10-25-99
MRF5812R1 价格&库存

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