CM100TU-24F

MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE CM100TU-24F ¡IC ................................................................... 100A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN 80 ±0.25 102 48.5 17 3.75 107 90 ±0.25 23 12 12 4–φ5.5 MOUNTING HOLES (4) U V W 12 5–M5NUTS Tc measured point 2.8 11 23 21.7 12 23 11 12 3.75 0.5 0.8 11 4 Tc measured point 29 –0.5 +1 21.7 7.1 8.1 P G UP RTC EUP GUN RTC EUN N U G VP RTC E VP GVN RTC E VN V GWP RTC E WP G WN RTC E WN W LABEL 26 CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE ( Note 1) IEM ( Note 1) PC ( Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 100 200 100 200 500 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr ( Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC = 100A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 600V, I C = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 6 — 1.8 1.9 — — — 1100 — — — — — 4.1 — — — 0.09 — — Max. 1 7 20 2.4 — 39 1.7 1.0 — 100 50 400 300 150 — 3.2 0.25 0.35 — 0.18V3 31 Unit mA V µA V nF nC ns ns µC V °C/W Ω Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 200 180 160 140 120 100 80 60 40 20 0 0 Tj = 25°C VGE = 20V 15 11 10 9.5 3 VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 9 8.5 8 0.5 1 1.5 2 2.5 3 3.5 4 0 40 80 120 160 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 5 Tj = 25°C Tj = 25°C 4 102 7 5 3 2 3 IC = 200A 2 IC = 100A IC = 40A 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) Cies tf td(off) 101 7 5 3 2 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 100 7 5 3 2 Coes Cres VGE = 0V 101 7 5 3 2 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.25°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.35°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 103 7 5 3 2 102 7 5 3 2 Irr trr 10–1 10–1 7 5 3 2 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 102 10–2 Single Pulse TC = 25°C 10–2 101 0 10 2 3 5 7 101 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 100A VCC = 400V VCC = 600V 500 1000 1500 GATE CHARGE QG (nC) Aug. 1999