BCP68T1G

NPN Silicon Epitaxial Transistor BCP68T1G This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current • The SOT−223 Package Can Be Soldered Using Wave or Reflow • SOT−223 package ensures level mounting, resulting in improved • • • www.onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die The PNP Complement is BCP69T1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 2,4 BASE 1 EMITTER 3 4 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 20 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 0.4 Adc Base Current − Peak IBM 0.4 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C −65 to 150 °C Rating Collector Current Collector Current − Peak (Note 2) Base Current − Continuous Operating and Storage Temperature Range TJ, Tstg 2 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW CA G G CA = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. 2. Reference SOA curve for IC peak. THERMAL CHARACTERISTICS ORDERING INFORMATION Package Shipping† BCP68T1G SOT−223 (Pb−Free) 1,000/Tape & Reel Device Characteristic Symbol Max Unit SBCP68T1G*, NSVBCP68T1G* SOT−223 (Pb−Free) 1,000/Tape & Reel Thermal Resistance, Junction−to−Ambient (Surface Mounted) RqJA 83.3 °C/W BCP68T3G SOT−223 (Pb−Free) 4,000/Tape & Reel TL 260 °C 10 Sec Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath © Semiconductor Components Industries, LLC, 2014 April, 2020 − Rev. 10 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BCP68T1/D BCP68T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Typ Max 25 − − 20 − − 5.0 − − − − 10 − − 10 50 85 60 − − − − 375 − − − 0.5 − − 1.0 − 60 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CES Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 15 − pF Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz) Cibo − 145 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 300 200 f, T CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN TYPICAL ELECTRICAL CHARACTERISTICS TJ = 125°C = 25°C 100 = - 55°C VCE = 1.0 V 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 300 200 100 70 VCE = 10 V TJ = 25°C f = 30 MHz 50 30 10 Figure 1. DC Current Gain 100 200 IC, COLLECTOR CURRENT (mA) Figure 2. Current-Gain-Bandwidth Product www.onsemi.com 2 1000 BCP68T1G TYPICAL ELECTRICAL CHARACTERISTICS 80 TJ = 25°C TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 70 Cib, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 1.0 0.4 0.2 0 50 40 VCE(sat) @ IC/IB = 10 1.0 60 30 10 100 1000 IC, COLLECTOR CURRENT (mA) 0 Figure 3. “On” Voltage RθVB, TEMPERATURE COEFFICIENT (mV/°C) Cob, CAPACITANCE (pF) TJ = 25°C 20 15 10 0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (V) 5.0 Figure 4. Capacitance 25 5.0 1.0 5.0 10 15 VR, REVERSE VOLTAGE (V) 20 -0.8 -1.2 -1.6 RqVB for VBE -2.0 -2.4 -2.8 1.0 Figure 5. Capacitance 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 6. Base−Emitter Temperature Coefficient 10 1.0 IC, COLLECTOR CURRENT (A) VCE , COLLECTOR VOLTAGE (V) TJ = 25°C 0.8 0.6 0.4 = 1000 mA I C = 10 mA = 50 mA = 100 mA 0.2 0 0.01 = 500 mA 0.1 1.0 10 IB, BASE CURRENT (mA) 100 ms 1 0.1 100 1 ms 1 Figure 7. Saturation Region 10 ms 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. Safe Operating Area www.onsemi.com 3 100 BCP68T1G 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 50 TJ = 25°C f = 1 MHz TJ = 25°C f = 1 MHz 45 Cob, CAPACITANCE (pF) Cib, CAPACITANCE (pF) TYPICAL ELECTRICAL CHARACTERISTICS 40 35 30 25 20 15 10 5 0 1 2 3 VR, REVERSE VOLTAGE (V) 4 0 5 0 Figure 9. Input Capacitance 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 10. Output Capacitance www.onsemi.com 4 25 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative