FCA47N60-F109

FCA47N60 N 沟道 SuperFET® MOSFET 600 V, 47 A, 70 mΩ 特性 描述 • 650 V @ TJ = 150°C SuperFET®MOSFET 是飞兆半导体第一代利用电荷平衡技术实 现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供 卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如功率因数校正 (PFC)、服 务器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用等。 • 典型值 RDS(on) = 58 mΩ • 超低栅极电荷 （典型值 Qg= 210 nC) • 低有效输出电容 （典型值 Coss(eff.)= 420 pF) • 100% 经过雪崩测试 应用 • 太阳能逆变器 • AC-DC 电源 D G G TO-3PN D S S 绝对最大额定值 符号 FCA47N60 参数 VDSS 漏极－源极电压 ID 漏极电流 - 连续 (TC = 25°C) - 连续 (TC = 100°C) IDM 漏极电流 - 脉冲 VGSS 栅极至源极电压 EAS 单脉冲雪崩能量 IAR 雪崩电流 FCA47N60_F109 单位 600 V 47 29.7 A A 141 A ± 30 V （注 2） 1800 mJ （注 1） 47 A （注 1） EAR 重复雪崩能量 （注 1） 41.7 mJ dv/dt 二极管恢复 dv/dt 峰值 （注 3） 4.5 V/ns PD 功耗 417 3.33 W W/°C (TC = 25°C) - 高于 25°C 的功耗系数 TJ, TSTG 工作和存储温度范围 TL 用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒 -55 至 +150 °C 300 °C 热性能 符号 参数 典型值 最大值 单位 RθJC 结至外壳热阻最大值 -- 0.3 °C/W RθJA 结至环境热阻最大值 -- 41.7 °C/W ©2010 飞兆半导体公司 FCA47N60 / FCA47N60_F109 Rev. 1 1 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 2017 年 9 月 器件标识 FCA47N60 器件 FCA47N60 封装 TO-3PN 卷尺寸 - 带宽 - 数量 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 电气特性 TC = 25°C 除非另有说明。 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVDSS 漏极－源极击穿电压 VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ID = 250 μA, 参考 25°C 数值 -- 0.6 -- V/°C ΔBVDSS / ΔTJ 击穿电压温度系数 BVDS 漏极－源极雪崩击穿电压 VGS = 0 V, ID = 47 A -- 700 -- V IDSS 零栅极电压漏极电流 VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C --- --- 1 10 μA μA IGSSF 栅极 - 体漏电流，正向 VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR 栅极 - 体漏电流，反向 VGS = -30 V, VDS = 0 V -- -- -100 nA VGS(th) 栅极阈值电压 VDS = VGS, ID = 250 μA 3.0 -- 5.0 RDS(on) 漏极－源极 导通电阻 VGS = 10 V, ID = 23.5 A -- 0.058 0.07 gFS 正向跨导 VDS = 20 V, ID = 23.5 A -- VGS(th) 栅极阈值电压 VDS = VGS, ID = 250 μA 3.0 Ciss 输入电容 5900 8000 pF 输出电容 VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- Coss -- 3200 4200 pF Crss 反向传输电容 -- 250 -- pF Coss 输出电容 VDS = 480 V, VGS = 0 V, f = 1.0 MHz -- 160 -- pF Coss eff. 有效输出电容 VDS = 0 V 至 400 V, VGS = 0 V -- 420 -- pF VDD = 300 V, ID = 47 A RG = 25 Ω -- 185 430 ns -- 210 450 ns -- 520 1100 ns -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC 导通特性 40 -- -5.0 动态特性 开关特性 td(on) 导通延迟时间 tr 导通上升时间 td(off) 关断延迟时间 tf 关断下降时间 Qg 总栅极电荷 Qgs 栅源极电荷 Qgd 栅漏极电荷 （注 4） VDS = 480 V, ID = 47 A VGS=10 V （注 4） 漏极 - 源极二极管特性 IS 漏源极二极管最大正向连续电流 -- -- 47 A ISM 漏源极二极管最大正向脉冲电流 -- -- 141 A VSD 漏极 - 源极二极管正向电压 VGS = 0 V, IS = 47 A -- -- 1.4 V trr 反向恢复时间 -- 590 -- ns Qrr 反向恢复电荷 VGS = 0 V, IS = 47 A dIF/dt =100 A/μs -- 25 -- μC （注 4） 注： 1. 重复额定值：脉冲宽度受限于最大结温。 2. IAS = 18 A, RG = 25 Ω, 开始于 TJ = 25°C 3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD = 380 V, 开始于 TJ = 25°C 4. 典型特性本质上独立于工作温度。 ©2010 飞兆半导体公司 FCA47N60 / FCA47N60_F109 Rev. 1 2 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 封装标识与定购信息 图 1. 导通区域特性图 2. 传输特性 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 10 2 ID , Drain Current [A] 2 1 10 ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 0 10 -1 0 10 10 150∩ 1 10 -55∩ ∝ Note 1. VDS = 40V 2. 250レs Pulse Test 0 10 2 1 10 25∩ 10 4 8 10 图 4. 体二极管正向电压变化与源电流和温度的关系 0.20 IDR , Reverse Drain Current [A] RDS(ON) [ヘ ],Drain-Source On-Resistance 图 3. 导通电阻变化与漏极电流和栅极电压的关系 0.15 VGS = 10V 0.10 VGS = 20V 0.05 0 20 40 60 80 100 120 140 160 180 2 10 1 10 150∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test 10 200 0.2 0.4 0.6 图 5. 电容特性 1.0 1.2 1.4 1.6 图 6. 栅极电荷特性 30000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 20000 VDS = 100V VGS, Gate-Source Voltage [V] 25000 Coss 15000 ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 10000 0 -1 10 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] 5000 25∩ 0 ∝ Note : TJ = 25∩ 0.00 Capacitance [pF] 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Crss 0 10 1 10 VDS = 250V VDS = 400V 8 6 4 2 ∝ Note : ID = 47A 0 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2010 飞兆半导体公司 FCA47N60 / FCA47N60_F109 Rev. 1 10 3 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 典型特性 图 7. 击穿电压变化与温度的关系 图 8. 导通电阻变化与温度的关系 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 47 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] 图 9. 最大安全工作区与壳温的关系 图 10. 最大漏极电流 50 Operation in This Area is Limited by R DS(on) 2 100 us 40 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 DC 0 10 ∝ Notes : o 1. TC = 25 C -1 10 0 10 20 10 o 2. TJ = 150 C 3. Single Pulse -2 10 30 1 2 10 0 25 3 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [∩ ] Zヨ JC(t), Thermal Response 图 11. 瞬态热响应曲线 D = 0 .5 10 -1 ∝ N o te s : 1 . Z ヨ J C( t) = 0 .3 ∩ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ヨ J C( t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 -2 10 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] ©2010 飞兆半导体公司 FCA47N60 / FCA47N60_F109 Rev. 1 4 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 典型特性 （接上页） FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 图 12. 栅极电荷测试电路与波形 图 13. 阻性开关测试电路与波形 VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off 图 14. 非箝位感性开关测试电路与波形 VGS ©2010 飞兆半导体公司 FCA47N60 / FCA47N60_F109 Rev. 1 5 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 图 15. 峰值二极管恢复 dv/dt 测试电路与波形 DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2010 飞兆半导体公司 FCA47N60 / FCA47N60_F109 Rev. 1 6 www.fairchildsemi.com FCA47N60 / FCA47N60_F109 — N 沟道 SuperFET® MOSFET 机械尺寸 TO-3PN 3L 图 16. 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