FDB8832

FDB8832 N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.1mΩ Features Applications „ Typ rDS(on) = 1.5mΩ at VGS = 5V, ID = 80A „ Starter / Alternator Systems „ Typ Qg(5) = 100nC at VGS = 5V „ Electronic Power Steering Systems „ Low Miller Charge „ DC-DC Converters „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) AD ©2011 Fairchild Semiconductor Corporation FDB8832 Rev. A1 FREE I M ENTATIO LE N MP LE „ RoHS Compliant 1 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET October 2011 Symbol Drain to Source Voltage VDSS VGS ID Parameter Ratings 30 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 165oC, VGS = 10V) 80 Drain Current Continuous (TC < 163oC, VGS = 5V) 80 Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed EAS PD A 34 See Figure 4 Single Pulse Avalanche Energy (Note 1) 1246 mJ Power Dissipation 300 W Derate above 25oC 2 W/oC TJ, TSTG Operating and Storage Temperature o -55 to +175 C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Ambient, lin2 copper pad area (Note 2) 0.5 o 62 oC/W 43 oC/W C/W Package Marking and Ordering Information Device Marking FDB8832 Device FDB8832 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V TJ = 150°C 30 - - - - 1 - - 250 - - ±100 nA V μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VDS = VGS, ID = 250μA 1.0 1.6 3.0 ID = 80A, VGS = 10V - 1.4 1.9 ID = 80A, VGS = 5V - 1.5 2.1 ID = 80A, VGS = 4.5V - 1.6 2.2 ID = 80A, VGS = 10V TJ = 175°C - 2.3 3.0 - 11400 - - 2140 - pF - 1260 - pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1MHz pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.2 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 204 265 nC nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V Qg(TH) Threshold Gate Charge VGS = 0 to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge FDB8832 Rev. A1 2 VDD = 15V ID = 80A Ig = 1.0mA - 100 130 - 10.9 14.2 nC - 33 - nC - 22 - nC - 43 - nC www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ns Switching Characteristics t(on) Turn-On Time - - 155 td(on) Turn-On Delay Time - 24 - ns tr Turn-On Rise Time - 73 - ns td(off) Turn-Off Delay Time - 54 - ns tf Turn-Off Fall Time - 38 - ns toff Turn-Off Time - - 149 ns ISD = 75A - 0.8 1.25 V ISD = 40A - 0.8 1.0 V VDD = 15V, ID = 80A VGS = 5V, RGS = 1.5Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 75A, di/dt = 100A/μs - 59 77 ns Qrr Reverse Recovery Charge IF = 75A, di/dt = 100A/μs - 67 87 nC Notes: 1: Starting TJ = 25oC, L = 0.61mH, IAS = 64A, VDD = 30V, VGS = 10V. 2: Pulse width = 100s. FDB8832 Rev. A1 3 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 350 1.0 300 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 250 VGS = 10V 200 VGS = 5V 150 100 50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC CURRENT LIMITED BY PACKAGE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 10000 VGS = 10V TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB8832 Rev. A1 4 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 4000 10us 1000 100us 100 10 LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 60 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area VDD = 5V 150 TJ = 175oC 100 TJ = 25oC TJ = -55oC 50 0 200 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 Figure 6. Unclamped Inductive Switching Capability VGS = 3V 100 50 0 0.0 0.5 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 1 2 3 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) VGS = 3.5V VGS, GATE TO SOURCE VOLTAGE (V) 0 4 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 3 TJ = 175oC 2 TJ = 25oC 1 0 150 VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 5V 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8832 Rev. A1 1.5 5 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250μA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.0 0.8 0.6 0.4 0.2 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 10000 Coss Crss f = 1MHz VGS = 0V 50 Figure 13. Capacitance vs Drain to Source Voltage FDB8832 Rev. A1 0.95 0.90 -80 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 -40 0 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250μA 10 ID = 80A 8 VDD = 12V 6 VDD = 15V VDD = 18V 4 2 0 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I58 FDB8832 Rev. A1 7 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ FPS™ PDP SPM™ The Power Franchise® ® AccuPower™ F-PFS™ Power-SPM™ Auto-SPM™ FRFET® PowerTrench® AX-CAP™* Global Power ResourceSM PowerXS™ TinyBoost™ BitSiC® Green FPS™ Programmable Active Droop™ TinyBuck™ Build it Now™ Green FPS™ e-Series™ QFET® TinyCalc™ CorePLUS™ QS™ Gmax™ TinyLogic® CorePOWER™ Quiet Series™ GTO™ TINYOPTO™ CROSSVOLT™ RapidConfigure™ IntelliMAX™ TinyPower™ CTL™ ISOPLANAR™ ™ TinyPWM™ Current Transfer Logic™ Marking Small Speakers Sound Louder TinyWire™ DEUXPEED® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC® Dual Cool™ MegaBuck™ SignalWise™ TriFault Detect™ MICROCOUPLER™ SmartMax™ EcoSPARK® TRUECURRENT®* EfficentMax™ MicroFET™ SMART START™ μSerDes™ ESBC™ MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® ® STEALTH™ MillerDrive™ UHC® SuperFET® MotionMax™ Fairchild® Ultra FRFET™ ® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor UniFET™ SuperSOT™-6 mWSaver™ FACT Quiet Series™ VCX™ SuperSOT™-8 OptoHiT™ FACT® VisualMax™ SupreMOS® OPTOLOGIC® FAST® VoltagePlus™ OPTOPLANAR® SyncFET™ FastvCore™ ® XS™ Sync-Lock™ FETBench™ ®* FlashWriter® *