FDB8832-F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel Logic Level PowerTrench® MOSFET 30V, 80A, 2.1mΩ Features Applications „ Typ rDS(on) = 1.5mΩ at VGS = 5V, ID = 80A „ 12V Automotive Load Control „ Typ Qg(5) = 100nC at VGS = 5V „ Starter / Alternator Systems „ Low Miller Charge „ Electronic Power Steering Systems „ Low Qrr Body Diode „ ABS „ UIS Capability (Single Pulse and Repetitive Pulse) „ DC-DC Converters „ Qualified to AEC Q101 AD FREE I M ENTATIO LE N MP LE „ RoHS Compliant ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Publication Order Number: FDB8832-F085/D FDB8832-F085 N-Channel Logic Level PowerTrench® MOSFET FDB8832-F085 Ratings 30 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 165oC, VGS = 10V) 80 Symbol Drain to Source Voltage VDSS VGS Parameter Drain Current Continuous (TC < 163oC, VGS = 5V) ID 80 Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed See Figure 4 Single Pulse Avalanche Energy EAS PD A 34 (Note 1) 1246 mJ Power Dissipation 300 W Derate above 25oC 2 W/oC TJ, TSTG Operating and Storage Temperature o -55 to +175 C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Ambient, lin2 copper pad area (Note 2) 0.5 o 62 oC/W 43 oC/W C/W Package Marking and Ordering Information Device Marking Device Package Reel Size FDB8832 FDB8832-F085 TO-263AB 330mm Tape Width Quantity 24mm 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V TJ = 150°C 30 - - - - 1 - - 250 - - ±100 nA V µA On Characteristics VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA ID = 80A, VGS = 10V rDS(on) Drain to Source On Resistance 1.0 1.6 3.0 - 1.4 1.9 ID = 80A, VGS = 5V - 1.5 2.1 ID = 80A, VGS = 4.5V - 1.6 2.2 ID = 80A, VGS = 10V TJ = 175°C - 2.3 3.0 VDS = 15V, VGS = 0V, f = 1MHz - 11400 - pF - 2140 - pF - 1260 - pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.2 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 204 265 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V Qg(TH) Threshold Gate Charge VGS = 0 to 1V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge www.onsemi.com 2 VDD = 15V ID = 80A Ig = 1.0mA - 100 130 nC - 10.9 14.2 nC - 33 - nC - 22 - nC - 43 - nC FDB8832-F085 N-Channel Logic Level PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 155 ns td(on) Turn-On Delay Time - 24 - ns tr Turn-On Rise Time - 73 - ns td(off) Turn-Off Delay Time - 54 - ns tf Turn-Off Fall Time - 38 - ns toff Turn-Off Time - - 149 ns ISD = 75A - 0.8 1.25 V ISD = 40A - 0.8 1.0 V VDD = 15V, ID = 80A VGS = 5V, RGS = 1.5Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 75A, di/dt = 100A/µs - 59 77 ns Qrr Reverse Recovery Charge IF = 75A, di/dt = 100A/µs - 67 87 nC Notes: 1: Starting TJ = 25oC, L = 0.61mH, IAS = 64A, VDD = 30V, VGS = 10V. 2: Pulse width = 100s. www.onsemi.com 3 FDB8832-F085 N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 350 1.0 300 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 250 VGS = 10V 200 VGS = 5V 150 100 50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 2 1 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC CURRENT LIMITED BY PACKAGE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 10000 VGS = 10V TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 1 10 FDB8832-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 500 10us 1000 100us 100 10 LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25oC DC IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 4000 100 o STARTING TJ = 25 C 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDD = 5V 150 TJ = 175oC 100 TJ = 25oC TJ = -55oC 50 0 200 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2 3 150 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V VGS = 3.5V VGS = 3V 100 50 0 0.0 4 0.5 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics 1 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 1000 5000 VGS, GATE TO SOURCE VOLTAGE (V) 0 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3 TJ = 175oC 2 TJ = 25oC 1 0 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) Figure 6. Unclamped Inductive Switching Capability Figure 5. Forward Bias Safe Operating Area 200 o STARTING TJ = 150 C 1 0.01 60 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage 1.5 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 200 FDB8832-F085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.0 0.8 0.6 0.4 0.2 0.0 -80 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 Ciss CAPACITANCE (pF) 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 40000 10000 Coss Crss f = 1MHz VGS = 0V 100 0.1 1.05 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250µA 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 ID = 80A 8 VDD = 12V 6 VDD = 18V 4 2 0 50 Figure 13. Capacitance vs Drain to Source Voltage VDD = 15V 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDB8832-085 N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com