FDB8132_F085

FDB8132_F085 N-Channel PowerTrench® MOSFET D D 30 V, 110 A, 1.6 mΩ Features „ Typ RDS(on) = 1.4mΩ at VGS = 10V, ID = 80A G „ Typ Qg(tot) = 244nC at VGS = 10V, ID = 80A „ UIS Capability G „ RoHS Compliant TO-263 FDB SERIES „ Qualified to AEC Q101 Applications S S For current package drawing, please refer to the Fairchild  website at https://www.fairchildsemi.com/package‐draw‐ ings/TO/TO263A02.pdf „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 30 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure 4 Single-Pulse Avalanche Energy (Note 2) 1434 A mJ Power Dissipation 333 W Derate Above 25oC 2.22 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.45 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDB8132 Device FDB8132_F085 Package D2-PAK(TO-263) Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.7mH, IAS = 64A, VDD = 20V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2014 Fairchild Semiconductor Corporation FDB8132_F085 Rev. C2 1 www.fairchildsemi.com FDB8132_F085 N-Channel PowerTrench® MOSFET October 2014 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 30V, VGS = 0V 30 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 2.0 2.6 4.0 V - 1.4 1.6 mΩ - 2.3 2.7 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate-to-Source Threshold Voltage Drain-to-Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 24V ID = 80A - 13450 - pF - 1740 - pF - 1200 - pF - 1.1 - Ω - 244 308 nC - 22.5 27 nC - 44 - nC - 64 - nC Switching Characteristics ton Turn-On Time - - 172 ns td(on) Turn-On Delay - 44 - ns tr Rise Time td(off) Turn-Off Delay tf toff - 82 - ns - 78 - ns Fall Time - 23 - ns Turn-Off Time - - 121 ns V VDD = 15V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=24V - 67 71 ns - 95 106 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDB8132_F085 Rev. C2 2 www.fairchildsemi.com FDB8132_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 400 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED VGS = 10V BY PACKAGE CURRENT LIMITED BY SILICON 300 200 100 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) 1000 VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: I = I2 175 - TC 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB8132_F085 Rev. C2 3 www.fairchildsemi.com FDB8132_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100us 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10ms 100ms 10 VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 TJ = -55oC 50 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 250 50 1000 10000 VGS = 0 V TJ = 175 oC TJ = 25 oC 1 0.1 250 0.2 0.4 0.6 0.8 1.0 1.2 Figure 9. Saturation Characteristics 80μs PULSE WIDTH Tj=175oC 5V 200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) FDB8132_F085 Rev. C2 100 300 100 0 0.0 10 10 5V 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 150 1 Figure 8. Forward Diode Characteristics VGS 200 0.1 VSD, BODY DIODE FORWARD VOLTAGE (V) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80μs PULSE WIDTH Tj=25oC 200 100 0.01 0.0 5 Figure 7. Transfer Characteristics 300 0.01 Figure 6. Unclamped Inductive Switching Capability TJ = 175oC 0 STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V TJ = 25oC 10 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 150 100 1 0.001 100 Figure 5. Forward Bias Safe Operating Area 200 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 0.2 0.4 0.6 0.8 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.0 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDB8132_F085 N-Channel PowerTrench® MOSFET Typical Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 6 4 TJ = 175oC 2 TJ = 25oC 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs. Gate Voltage 0.8 ID = 80A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 ID = 1mA 1.05 1.0 0.8 1.00 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 10000 Coss 1000 Crss 100 f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 15. Capacitance vs. Drain to Source Voltage FDB8132_F085 Rev. C2 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 100000 CAPACITANCE (pF) 1.2 Figure 12. Normalized Rdson vs. Junction Temperature VGS = VDS ID = 250μA 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.6 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.0 10 ID = 80A VDD = 12V 8 VDD = 15V 6 VDD = 18V 4 2 0 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDB8132_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 FDB8132_F085 Rev. C2 6 www.fairchildsemi.com