FDBL86066-F085

FDBL86066-F085 N‐Channel POWERTRENCH) MOSFET 100 V, 240 A, 4.1 mW Features • • • • • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A UIS Capability Qualified to AEC Q101 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VDSS RDS(ON) MAX ID MAX 100 V 4.1 mW @ 10 V 240 A D Applications • • • • • • • Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electrical Power Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems G S N-CHANNEL MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit VDSS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ±20 V Drain Current − Continuous, (VGS = 10 V) TC = 25°C (Note 1) 185 A Pulsed Drain Current, TC = 25°C (See Figure 4) A EAS Single Pulse Avalanche Energy (Note 2) 93.6 mJ PD Power Dissipation 300 W 2 W/°C −55 to +175 °C ID Derate Above 25°C TJ, TSTG Operating and Storage Temperature H−PSOF8L CASE 100CU MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. 2. Starting TJ = 25°C, L = 30 mH, IAS = −79 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche. $Y&Z&3&K FDBL 86066 $Y &Z &3 &K FDBL86066 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2018 − Rev. 2 1 Publication Order Number: FDBL86066−F085/D FDBL86066−F085 THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction to Case 0.5 RqJA Thermal Resistance, Junction to Ambient (Note 3) 43 3. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit V OFF CHARACTERISTICS BVDSS IDSS IGSS Drain-to-Source Breakdown Voltage ID = 250 mA, VGS = 0 V 100 − − Drain-to-Source Leakage Current VDS = 100 V, VGS = 0 V TJ = 25°C TJ = 175°C (Note 4) − − − − 1 1 VGS = ±20 V − − ±100 nA V Gate-to-Source Leakage Current mA ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA 2 2.9 4.0 RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 80 A TJ = 25°C TJ = 175°C (Note 4) − − 3.3 7.3 4.1 8.8 VDS = 50 V, VGS = 0 V, f = 1 MHz − 3240 − pF mW DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 1950 − pF Crss Reverse Transfer Capacitance − 26 − pF Gate Resistance VGS = 0.5 V, f = 1 MHz − 0.5 − W Qg(tot) Total Gate Charge VGS = 0 V to 10 V, VDD = 50 V, ID = 80 A − 47 69 nC Qg(th) Threshold Gate Charge VGS = 0 V to 2 V, VDD = 50 V, ID = 80 A − 6 − nC Qgs Gate to Source Charge VDD = 50 V, ID = 80 A − 15 − nC Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 80 A − 10 − nC VDD = 50 V, ID = 80 A, VGS = 10 V, RGEN = 6 W − − 35 ns Rg SWITCHING CHARACTERISTICS ton Turn-On Time td(on) Turn-On Delay tr td(off) tf toff − 18 − ns Rise Time − 9 − ns Turn-Off Delay − 36 − ns Fall Time − 13 − ns Turn-Off Time − − 68 ns V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage ISD = 80 A, VGS = 0 V − 0.9 1.25 ISD = 40 A, VGS = 0 V − 0.85 1.2 trr Reverse Recovery Time IF = 80 A, dISD/dt = 300 A/ms − 36 54 ns Qrr Reverse Recovery Charge − 84 126 nC trr Reverse Recovery Time − 32 48 ns Qrr Reverse Recovery Charge − 243 365 nC IF = 80 A, dISD/dt = 1000 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDBL86066−F085 1.2 200 CURRENT LIMITED BY SILICON 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 0.0 VGS = 10 V 160 120 80 40 0 0 25 50 75 100 125 150 175 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 25 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZqJC DUTY CYCLE − DESCENDING ORDER 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJC x RqJC + TC SINGLE PULSE 0.01 −5 10 −4 10 −3 −2 −1 100 10 10 10 t, RECTANGULAR PULSE DURATION(s) 10 1 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10 V 100 T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 25 175 − T C 150 SINGLE PULSE 10 −5 10 −4 10 −3 175 −2 −1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 10 0 10 1 FDBL86066−F085 TYPICAL CHARACTERISTICS 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 1ms 10ms 100ms 0.1 1 10 100 If R = 0 tAV = (L)(I AS )/(1.3*RATED BV DSS − V DD ) If R 00 tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS − VDD ) +1] IAS, AVALANCHE CURRENT (A) I D, DRAIN CURRENT (A) 1000 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.0001 0.001 0.01 300 Figure 5. Forward Bias Safe Operating Area VDD = 10 V 160 120 TJ = 175oC 80 o TJ = 25 C TJ = −55 oC 0 1 2 3 4 5 6 300 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 250 ms DUTY CYCLE = 0.5% MAX 40 10 200 1000 0.01 0.001 7 TJ = 25 oC 0.1 TJ = −55oC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Forward Diode Characteristics 300 250 ms PULSE WIDTH Tj=25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 100 TJ = 175 oC 1 Figure 7. Transfer Characteristics VGS 10 VGS = 0 V VGS, GATE TO SOURCE VOLTAGE (V) 300 1 Figure 6. Unclamped Inductive Switching Capability 240 200 0.1 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V) 100 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 240 180 120 60 250 m s PULSE WIDTH Tj=175oC 0 0 0 1 2 3 4 5 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDBL86066−F085 rDS(on), DRAIN TO SOURCE ON−RESISTANCE ( mW) 30 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS PULSE DURATION = 250 m s DUTY CYCLE = 0.5% MAX ID = 80 A 25 20 15 TJ = 175oC 10 5 o TJ = 25 C 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250 m A 1.0 0.8 0.6 0 40 80 120 ID = 80 A VGS = 10 V 2.0 1.6 1.2 0.8 0.4 −80 160 160 200 1.05 1.00 0.95 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) 120 −40 0 40 80 120 160 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Ciss Coss 100 10 Crss 1 80 TJ, JUNCTION TEMPERATURE ( oC) 10000 1 0.1 40 ID = 1 mA 0.90 −80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature f = 1 MHz VGS = 0 V 0 1.10 TJ, JUNCTION TEMPERATURE ( oC) 1000 −40 Figure 12. Normalized RDS(on) vs. Junction Temperature 1.2 −40 PULSE DURATION = 250 m s DUTY CYCLE = 0.5% MAX 2.4 TJ, JUNCTION TEMPERATURE ( oC) Figure 11. RDS(on) vs. Gate Voltage 0.4 −80 2.8 10 100 10 ID = 80 A VDD = 40 V VDD = 60 V 6 4 2 0 0 VDS, DRAIN TO SOURCE VOLTAGE (V) VDD = 50 V 8 10 20 30 40 Qg, GATE CHARGE(nC) Figure 15. Capacitance vs. Drain to Source Voltage Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 50 FDBL86066−F085 PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE O www.onsemi.com 6 FDBL86066−F085 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity FDBL86066−F085 FDBL86066 H−PSOF8L (Pb-Free / Halogen Free) 13″ 24 mm 2000 Units POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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