FDC86244

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 2.3 A, 144 mW FDC86244 www.onsemi.com General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features Shielded Gate MOSFET Technology Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant TSOT23 6−Lead CASE 419BL • • • • • MARKING DIAGRAM &E&Y &.244&G 1 XXX &E &Y &. G Applications • Load Switch • Synchronous Rectifier • Primary Switch = Specific Device Code = Space Designator = Year of Production = Pin One Identifier = Pb−Free Package PINOUT S 4 3 G D 5 2 D D 6 1 D SuperSOTTM−6 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 March, 2020 − Rev. 2 1 Publication Order Number: FDC86244/D FDC86244 MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted Parameter Symbol Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID Drain Current − Continuous (Note 1a) − Pulsed 2.3 10 EAS Single Pulse Avalanche Energy (Note 3) 12 mJ PD Power Dissipation (Note 1a) 1.6 W Power Dissipation (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range A −55 to +150 °C Ratings Units °C/W THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case 30 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 0.244 FDC86244 SSOT−6 7” 8 mm 3000 Units www.onsemi.com 2 FDC86244 ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS Breakdown Voltage Temperature DTJ Coefficient ID = 250 mA, VGS = 0 V 150 ID = 250 mA, referenced to 25 °C V 103 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage DVGS(th) Gate to Source Threshold Voltage Temperature Coefficient DTJ rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 mA 2.0 2.5 ID = 250 mA, referenced to 25 °C −9 VGS = 10 V, ID = 2.3 A 113 144 VGS = 6 V, ID = 1.9 A 128 188 VGS = 10 V, ID = 2.3 A, TJ = 125 °C 214 273 VDD = 5 V, ID = 2.3 A mV/°C 6 mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Rg VDS = 75 V, VGS = 0 V, f = 1 MHz 260 345 pF 32 45 pF Reverse Transfer Capacitance 1.7 5 pF Gate Resistance 1.3 W SWITCHING CHARACTERISTICS td(on) tr td(off) tf VDD = 75 V, ID = 2.3 A, VGS = 10 V, RGEN = 6 W Turn−On Delay Time 4.7 10 ns Rise Time 1.4 10 ns Turn−Off Delay Time 10 20 ns 3.1 10 ns 4.2 6 nC 4 nC Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 75 V Total Gate Charge VGS = 0 V to 5 V 2.4 Qgs Total Gate Charge ID = 2.3 A 1.0 nC Qgd Gate to Drain “Miller” Charge 1.0 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.8 1.3 V trr Reverse Recovery Time IF = 2.3 A, di/dt = 100 A/ms 45 73 ns Qrr Reverse Recovery Charge 33 53 nC 1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. b. 175 °C/W when mounted on a minimum pad of 2 oz copper a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %. 3. Starting TJ = 25°C, L = 1.0 mH, IAS = 5.0 A, VDD = 135 V, VGS = 10 V. www.onsemi.com 3 FDC86244 TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 10 VGS = 6 V 8 VGS = 5 V 6 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 4 2 0 VGS = 4.5 V VGS = 4 V 0 1 2 3 4 VGS = 4 V VGS = 4.5 V 4 VGS = 5 V 3 2 VGS = 6 V 1 0 5 0 2 Figure 1. On−Region Characteristics 500 ID = 2.3 A VGS = 10 V rDS(on) , DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 200 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25 oC 2 TJ = −55oC 3 6 8 10 Figure 4. On−Resistance vs Gate to Source Voltage TJ = 150 oC 2 4 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 1 TJ = 25 oC 10 4 0 TJ = 125 oC 0 2 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 6 10 ID = 2.3 A 300 Figure 3. Normalized On− Resistance vs Junction Temperature 8 8 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 400 0.4 −75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE oC () 10 6 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage SOURCE ON−RESISTANCE(mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 2.2 4 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 10 V PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 4 5 VGS = 0 V 1 TJ = 25 oC 0.1 0.01 0.001 0.2 6 TJ = 150oC VGS, GATE TO SOURCE VOLTAGE (V) TJ = −55oC 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 FDC86244 TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) 400 ID = 2.3 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 100 Coss 10 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 7 2.5 6 5 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25oC 4 TJ = 100oC 3 TJ = 125oC 2 2.0 VGS = 10 V 1.5 VGS = 6 V 1.0 0.5 RqJA = 78oC/W 1 0.01 0.1 1 0.0 25 2 50 tAV, TIME IN AVALANCHE (ms) 100 125 150 o Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 20 10 100 us 1 0.1 75 TA, AMBIENT TEMPERATURE (C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss 1 0.1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.01 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC o RqJA = 175 C/W TA = 25 oC 0.001 0.1 1 10 100 500 SINGLE PULSE R qJA = 175 oC/W TA = 25 oC 100 10 1 0.5 −4 10 −3 10 −2 10 −1 10 1 10 100 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1000 FDC86244 TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted (continued) 2 NORMALIZED THERMAL IMPEDANCE, ZqJA 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJA x R qJA + TA SINGLE PULSE o R qJA = 175 C/W 0.001 −4 10 −3 10 −2 10 −1 10 11 0 100 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve www.onsemi.com 6 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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