FDT86244

DATA SHEET www.onsemi.com MOSFET – N-Channel Shielded Gate POWERTRENCH) SOT−223 CASE 318H 150 V, 2.8 A, 128 mW FDT86244 D Description This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness. G D S Features • • • • • • • • Shielded Gate MOSFET Technology Max RDS(on) = 128 mW at VGS = 10 V, ID = 2.8 A Max RDS(on) = 178 mW at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package Fast Switching Speed 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant Typical Applications MARKING DIAGRAM FSAXY 86244 1 Z XY 86244 • Load Switch • Primary Switch ORDERING INFORMATION Device MOSFET Maximum Ratings TA = 25°C unless otherwise noted Parameter Symbol Ratings Unit VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage 20 V Drain Current −Continuous TA = 25°C (Note 1a) 2.8 A −Pulsed 12 EAS Single Pulse Avalanche Energy (Note 3) 12 mJ PD Power Dissipation TA = 25°C (Note 1a) 2.2 W Power Dissipation TA = 25°C (Note 1b) 1.0 ID = Assembly Plan Code = Date Code (Year & week) = Specific Device Code TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 FDT86244 Package SOT−223 (Pb−Free) Shipping† 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 September, 2022 − Rev 2 1 Publication Order Number: FDT86244/D FDT86244 THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RθJC Thermal Resistance, Junction to Case (Note 1) 12 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 55 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit 150 − − V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBV DSS(th) Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − 104 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA 2.0 3.1 4.0 V DT J On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA DV GS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − −10 − mV/°C Static Drain to Source On Resistance VGS = 10 V, ID = 2.8 A − 106 128 mW VGS = 6 V, ID = 2.4 A − 127 178 VGS = 10 V, ID = 2.8 A, TJ = 125°C − 196 237 VDS = 10 V, ID = 2.8 A − 12 − S VDS = 75 V, VGS = 0 V, f =1 MHz − 295 395 pF DT J RDS(on) gFS Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance − 33 45 pF Crss Reverse Transfer Capacitance − 2.4 5 pF Gate Resistance − 1 − W − 5.3 11 ns − 1.3 10 ns Turn−Off Delay Time − 9.8 20 ns Fall Time − 2.4 10 ns VGS = 0 V to 10 V, VGS = 0 V to 5 V − 4.9 7 nC − 2.8 4 nC VDD = 75 V, ID = 2.8 A − 1.4 − nC − 1.3 − nC Rg Switching Characteristics td(on) tr td(off) tf Turn−On Delay Time Rise Time Qg(TOT) Total Gate Charge Qg(TOT) Total Gate Charge Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 2.8 A, VGS = 10 V, RGEN = 6 Ω www.onsemi.com 2 FDT86244 ELECTRICAL CHARACTERISTICS (continued) TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit − 0.82 1.3 V − 48 77 ns − 44 70 nC Drain−Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.8 A (Note 2) IF = 2.8 A, di/dt = 100 A/ms trr Reverse Recovery Time Qrr Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a) 55 °C/W when mounted on a b) 118 °C/W when mounted on a minimum pad of 2 oz copper 1 in2 pad of 2 oz copper 2. Pulse Test : Pulse Width < 300 ms, Duty Cycle < 2.0% 3. Starting TJ = 25 °C; N−ch: L = 1 mH, IAS = 5 A, VDD = 135 V, VGS = 10 V. www.onsemi.com 3 FDT86244 TYPICAL CHARACTERISTICS TJ = 25°C UNLESS OTHERWISE NOTED −ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 12 VGS = 6 V 9 VGS = 5.5 V 6 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 3 VGS = 5 V 0 0 1 2 3 4 5 4 VGS = 5 V VGS = 5.5 V 3 VGS = 6 V 2 1 0 0 3 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 ID = 2.8 A VGS = 10 V ID = 2.8 A 1.8 300 1.6 1.4 1.2 200 1.0 TJ = 125°C 100 0.8 0.6 0.4 −75 −50 25 0 25 75 50 100 0 125 150 TJ = 125°C 4 TJ, JUNCTION TEMPERATURE (5C) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 150°C 6 TJ = 25°C 3 TJ =−55°C 0 2 3 4 5 6 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VDS = 5 V 5 Figure 4. On−Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 9 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 400 2.0 12 12 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage RDS(on), DRAIN TO SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 2.2 9 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics 2.4 VGS = 10 V PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 20 10 1 TJ = 150°C TJ = 25°C 0.1 TJ = −55°C 0.01 0.001 0.2 7 VGS = 0 V VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDT86244 10 1000 ID = 2.8 A VDD = 50 V 8 VDD = 75 V 6 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (CONTINUED) TJ = 25°C UNLESS OTHERWISE NOTED VDD = 100 V 4 100 Coss 10 2 0 1 0 2 3 Qg, GATE CHARGE (nC) 4 1 0.1 5 1 10 100 Figure 8. Capacitance vs Drain to Source Voltage 8 6 6 5 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics TJ = 25°C TJ = 100°C 2 TJ = 125°C 1 0.01 0.1 tAV, TIME IN AVALANCHE (ms) VGS = 10 V 4 VGS = 6 V 3 2 RqJC = 12 °C/W 1 0 25 1 50 75 100 125 150 TC, CASE TEMPERATURE (5C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 20 100 us 1 1 ms 10 ms 100 ms THIS AREA IS LIMITEDBY rDS(on) 0.1 1s SINGLE PULSE 0.01 0.005 0.1 TJ = MAX RATED RqJA = 118°C/W TA = 25°C 1 10 s DC 10 100 500 P(PK), PEAK TRANSIENT POWER (W) 500 10 ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 100 10 1 10−4 SINGLE PULSE RqJA = 118°C/W TA = 25°C 10−3 10−2 10−1 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDT86244 TYPICAL CHARACTERISTICS (CONTINUED) TJ = 25°C UNLESS OTHERWISE NOTED NORMALIZED THERMAL IMPEDANCE, ZqJA) 2 DUTY CYCLE−DESCENDING ORDER 1 D = 0.5 0.1 0.01 0.2 0.1 P DM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x + RqJA + TA SINGLE PULSE RqJA = 118°C/W 0.01 10−4 10−3 10−2 10−1 1 10 t, RECTANGULAR PULSE DURATION (sec) 100 Figure 13. Junction−to−Ambient Transient Thermal Response Curve www.onsemi.com 6 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 CASE 318H ISSUE B DATE 13 MAY 2020 SCALE 2:1 GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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