FDMC86260ET150

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC86260ET150 N 沟道 Power Trench® MOSFET 150 V， 25 A， 34 mΩ 特性 概述  TJ 额定值扩展：175°C 该 N 沟道 MOSFET 采用飞兆先进的 PowerTrench® 工艺生产， 这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性 能而定制的。  最大 rDS(on) = 34 mΩ （VGS = 10 V， ID = 5.4 A）  最大 rDS(on) = 44 mΩ （VGS = 6 V， ID = 4.8 A） 应用  高性能沟道技术可实现极低的 rDS(on)  DC-DC 转换  100% 经过 UIL 测试  终端为无铅产品  符合 RoHS 标准 引脚 1 引脚 1 D D 顶 D S S S S D S D S D G D G D 底 Power 33 MOSFET 最大额定值 TA = 25 °C 除非另有说明 符号 参数 VDS 漏极－源极电压 VGS 栅极－源极电压 漏极电流 ID - 连续 TC = 25 °C - 连续 TC = 100 °C - 连续 TA = 25 °C - 脉冲 EAS 单脉冲雪崩能量 PD TJ, TSTG 功耗 TC = 25 °C 功耗 TA = 25 °C 额定值 150 单位 V ±20 V 25 （注 5） （注 5） 18 （注 1a） 5.4 （注 4） 116 （注 3） 121 65 2.8 （注 1a） -55 ? +175 工作和存储结温范围 A mJ W °C 热性能 RθJC 结至外壳热阻 （注 1） 2.3 RθJA 结至环境热阻 （注 1a） 53 °C/W 封装标识与定购信息 器件标识 FDMC86260ET © 2015 飞兆半导体公司 FDMC86260ET150 修订版 C1 器件 FDMC86260ET150 封装 Power33 1 卷尺寸 13 ’’ 带宽 12 mm 数量 3000 个 www.fairchildsemi.com FDMC86260ET150 N 沟道 Power Trench® MOSFET 2015 年 3 月 符号 参数 测试条件 最小值 典型值 最大值 单位 关断特性 BVDSS 漏极－源极击穿电压 ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ 击穿电压温度系数 ID = 250 μA, 参考温度为 25 °C IDSS 零栅极电压漏极电流 VDS = 120 V, VGS = 0 V 1 μA 栅极－源极漏电流 VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) 栅极－源极阈值电压 VGS = VDS, ID = 250 μA 4 V ΔVGS(th) ΔTJ 栅极－源极阈值电压温度系数 ID = 250 μA, 参考温度为 25 °C -9 VGS = 10 V, ID = 5.4 A 27 漏极至源极静态导通电阻 VGS = 6 V, ID = 4.8 A 31 44 VGS = 10 V, ID = 5.4 A, TJ = 125 °C 55 69 VDD = 10 V, ID = 5.4 A 19 IGSS 150 V 110 mV/°C 导通特性 rDS(on) gFS 正向跨导 2 2.7 mV/°C 34 mΩ S 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Rg 栅极阻抗 VDS = 75 V, VGS = 0 V, f = 1 MHz 1000 1330 pF 105 140 pF 4.8 10 pF 0.6 1.8 Ω 0.1 开关特性 td(on) 导通延迟时间 tr 上升时间 td(off) 关断延迟时间 VDD = 75 V, ID = 5.4 A, VGS = 10 V, RGEN = 6 Ω 9.5 19 ns 2 10 ns ns 17 30 10 ns 下降时间 3.3 Qg(TOT) 总栅极电荷 VGS = 0 V 至 10 V 15 21 nC Qg(TOT) 总栅极电荷 VGS = 0 V 至 6 V 9.7 14 nC tf Qgs Qgd 总栅极电荷 VDD = 75 V, ID = 5.4 A 栅极－漏极 “ 米勒 ” 电荷 4.0 nC 3.1 nC 漏极－源极二极管特性 VSD 源极－漏极二极管正向电压 trr 反向恢复时间 Qrr 反向恢复电荷 VGS = 0 V，IS = 5.4 A （注 2） 0.77 1.3 V VGS = 0 V， IS = 1.9 A （注 2） 0.72 1.2 V IF = 5.4 A, di/dt = 100 A/μs 64 102 ns 85 137 nC 注意： 1. RθJA 取决于安装在一平方英寸衬垫， 2oz 铜焊盘以及 FR-4 材质尺寸 1.5 x 1.5in. 的衬垫上的器件。 RθCA 由用户的电路板设计确定。 b. 125 安装在 2 oz 最小铜焊盘上 时的 °C/W a. 53 安装在 2 oz 最小 1 in2 铜 焊盘上时的 °C/W SS SF DS DF G SS SF DS DF G 2. 脉冲测试：脉冲宽度：