FDPF4D5N10C

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.5 mΩ Features General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. „ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 100 A „ Extremely Low Reverse Recovery Charge, Qrr „ 100% UIL Tested „ RoHS Compliant Applications „ Synchronous Rectification for ATX / Server / Telecom PSU „ Motor Drives and Uninterruptible Power Supplies „ Micro Solar Inverter D G G G D S D S TO-220 S TO-220F MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol Ratings Parameter VDS Drain to Source Voltage FDP4D5N10C 100 VGS Gate to Source Voltage ±20 ±20 128* 128* Drain Current -Continuous ID -Continuous TC = 25°C (Note 3) TC = 100°C (Note 3) 91 91 (Note 1) 512 512 -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG FDPF4D5N10C 100 (Note 2) Units V V A 486 mJ Power Dissipation TC = 25°C 150 37.5 Power Dissipation TA = 25°C 2.4 2.4 -55 to +175 -55 to +175 °C FDP4D5N10C FDPF4D5N10C Units Operating and Storage Junction Temperature Range W * Drain current limited by maximum junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 1.0 4.0 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 °C/W Package Marking and Ordering Information Device Marking FDP4D5N10C Device FDP4D5N10C Package TO-220 Packing Mode Tube Quantity 50 units FDPF4D5N10C FDPF4D5N10C TO-220F Tube 50 units Semiconductor Components Industries, LLC, 2017 June, 2017, Rev. 1.0 Publication Order Number: FDP4D5N10C / FDPF4D5N10C/D 1 FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 100 V 53 mV/°C VDS = 80 V, VGS = 0 V 1 μA VDS = 80 V, TJ= 150°C 500 μA VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 310 μA 3.2 4.0 V rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 100 A 4.0 4.5 mΩ gFS Forward Transconductance VDS = 5 V, ID = 100 A 134 2.0 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 3615 5065 pF 2330 3265 pF 18 35 pF 1.1 2.2 Ω 29 47 ns 49 79 ns 41 66 ns 13 24 ns 48 68 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Qoss Output Charge VDD = 50 V, ID = 100 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VDD = 50 V, ID = 100 A VDD = 50 V, VGS = 0 V nC 19 nC 9 nC 150 nC Drain-Source Diode Characteristic IS Maximum Continuous Drain to Source Diode Forward Current - - 128 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 512 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 100 A 1.0 1.3 V trr Reverse Recovery Time VGS = 0 V, VDD = 50 V, IF = 100 A, dIF/dt = 100 A/μs 82 132 ns 106 170 nC 71 114 ns 258 413 nC Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, VDD = 50 V, IF = 100 A, dIF/dt = 300 A/μs Notes: 1. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details. 2. EAS of 486 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 18 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 58 A. 3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.onsemi.com 2 FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted. VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 240 VGS = 7 V VGS = 6 V 180 120 VGS = 5.5 V 60 VGS = 5 V 0 0 1 2 3 4 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 300 VGS = 5 V 4 VGS = 5.5 V 3 VGS = 6 V VGS = 7 V 2 1 0 5 0 60 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID = 100 A VGS = 10 V 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) 300 IS, REVERSE DRAIN CURRENT (A) 180 TJ = 175 oC TJ = 25 oC 60 TJ = -55 oC 2 3 4 5 6 7 8 ID = 100 A 24 16 TJ = 150 oC 8 TJ = 25 oC 4 5 6 7 8 9 10 Figure 4. On-Resistance vs. Gate to Source Voltage VDS = 5 V 120 300 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 240 240 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 32 0 Figure 3. Normalized On Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) 180 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.2 0 120 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 2.0 VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 9 300 100 VGS = 0 V 10 TJ = 175 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 10 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. 10000 ID = 100 A 8 VDD = 50 V VDD = 75 V 6 4 Coss 1000 100 Crss 10 2 0 Ciss VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 f = 1 MHz VGS = 0 V 0 10 20 30 40 1 0.1 50 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 100 160 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 1.0 C/W TJ = 25 oC 10 TJ = 125 oC TJ = 150 oC 1 0.001 0.01 0.1 1 10 100 120 VGS = 10 V 80 40 0 25 1000 50 100 125 150 175 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 1000 10 μs 100 10 1 THIS AREA IS LIMITED BY rDS(on) 100 μs SINGLE PULSE TJ = MAX RATED 1 ms RθJC = 1.0 oC/W TC = 25 oC 0.1 0.1 1 10 ms 100 ms CURVE BENT TO MEASURED DATA 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 75 o tAV, TIME IN AVALANCHE (ms) 100 10 μs 100 10 1 THIS AREA IS LIMITED BY rDS(on) 100 μs SINGLE PULSE TJ = MAX RATED 1 ms RθJC = 4.0 oC/W TC = 25 oC 0.1 0.1 400 VDS, DRAIN to SOURCE VOLTAGE (V) 1 10 ms CURVE BENT TO MEASURED DATA 10 100 ms 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area for FDPF4D5N10C Figure 11. Forward Bias Safe Operating Area for FDP4D5N10C www.onsemi.com 4 400 FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. 100000 SINGLE PULSE RθJC = 1.0 oC/W P(PK), PEAK TRANSIENT POWER (W) P(PK), PEAK TRANSIENT POWER (W) 100000 TC = 25 oC 10000 100 -4 10 -3 10 -2 10 -1 10 0 1 10 TC = 25 oC 10000 1000 10 -5 10 SINGLE PULSE RθJC = 4.0 oC/W 10 1000 2 10 100 10 -5 10 -4 10 t, PULSE WIDTH (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -2 10 -1 0 10 1 10 10 2 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation for FDP4D5N10C 2 -3 10 Figure 14. Single Pulse Maximum Power Dissipation for FDPF4D5N10C DUTY CYCLE-DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 PDM t1 t2 NOTES: SINGLE PULSE 0.001 -5 10 -4 10 ZθJC(t) = r(t) x RθJC RθJC = 1.0 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 -3 10 -2 -1 10 10 0 1 10 10 2 10 t, RECTANGULAR PULSE DURATION (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 15. Junction-to-Case Transient Thermal Response Curve for FDP4D5N10C 2 DUTY CYCLE-DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: 0.01 ZθJC(t) = r(t) x RθJC RθJC = 4.0 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 -5 10 -4 10 -3 10 -2 -1 10 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 16. Junction-to-Case Transient Thermal Response Curve for FDPF4D5N10C www.onsemi.com 5 2 10 FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6 FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET Dimensional Outline and Pad Layout FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET Dimensional Outline and Pad Layout TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 7