FDP8N50NZ / FDPF8N50NZ
N-Channel UniFETTM II MOSFET
500 V, 8 A, 850 m
Features
Description
• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Uninterruptible Power Supply
• Lighting
• AC-DC Power Supply
D
GD
S
G
G
D
S
TO-220
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
- Continuous (TC = 25oC)
FDP8N50NZ FDPF8N50NZ
500
Unit
V
±25
V
8
8*
4.8
4.8*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
8
A
EAR
Repetitive Avalanche Energy
(Note 1)
13
mJ
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
32*
A
122
(Note 3)
(TC = 25oC)
PD
TL
32
(Note 2)
A
mJ
10
V/ns
130
40.3
W
1
0.3
W/oC
-55 to +150
oC
300
oC
FDP8N50NZ FDPF8N50NZ
Unit
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
0.96
3.1
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
1
oC/W
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
October 2013
Device Marking
FDP8N50NZ
Device
FDP8N50NZ
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
FDPF8N50NZ
FDPF8N50NZ
TO-220F
Tube
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
VGS = ±25V, VDS = 0V
-
-
±10
A
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 4A
-
0.77
0.85
gFS
Forward Transconductance
VDS = 20V, ID = 4A
-
6.3
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
565
735
pF
-
80
105
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V,ID = 8A
VGS = 10V
(Note 4)
-
5
8
pF
-
14
18
nC
-
4
-
nC
-
6
-
nC
-
17
45
ns
-
34
80
ns
-
43
95
ns
-
27
60
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 8A
RG = 25, VGS = 10V
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
8
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
30
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 8A
-
-
1.4
V
trr
Reverse Recovery Time
228
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 8A
dIF/dt = 100A/s
-
1.43
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
2
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
30
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID, Drain Current[A]
10
ID, Drain Current[A]
Figure 2. Transfer Characteristics
30
1
0.1
o
150 C
o
-55 C
o
25 C
1
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
0.03
0.03
2. TC = 25 C
0.1
1
VDS, Drain-Source Voltage[V]
10
0.1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
6
8
VGS, Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
1.6
1.2
VGS = 10V
VGS = 20V
0.8
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.4
*Note: TC = 25 C
0
3
6
9
12
ID, Drain Current [A]
15
1
0.4
18
Figure 5. Capacitance Characteristics
Coss
900
*Note:
1. VGS = 0V
2. f = 1MHz
600
300
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
2.4
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
2. 250s Pulse Test
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage [V]
10
VGS, Gate-Source Voltage [V]
1200
Capacitances [pF]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.0
RDS(ON) [],
Drain-Source On-Resistance
2
6
4
2
0
30
3
VDS = 100V
VDS = 250V
VDS = 400V
8
*Note: ID = 8A
0
3
6
9
12
Qg, Total Gate Charge [nC]
15
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250A
0.8
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 4A
0.5
0.0
-100
150
Figure 9. Maximum Safe Operating Area
- FDP8N50NZ
-50
0
50
100
o
TJ, Junction Temperature [ C]
10s
10s
ID, Drain Current [A]
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
100s
10
100s
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
DC
*Notes:
o
1. TC = 25 C
0.01
150
Figure 10. Maximum Safe Operating Area
- FDPF8N50NZ
50
50
ID, Drain Current [A]
2.5
0.01
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 12. Unclamped Inductive
Switching Capability
10
10
8
IAS, AVALANCHE CURRENT(A)
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
TJ = 25oC
TJ = 125oC
1
0.01
150
0.1
1
4
tAV, TIME IN AVALANCHE(ms)
4
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics (Continued)
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FDP8N50NZ
oC/W]
ZThermal
Response
Response
[Z[JC
]
JC(t), Thermal
2
1
0.5
0.2
0.1
PDM
0.1
t1
0.05
t2
*Notes:
0.02
0.01
o
1. ZJC(t) = 0.96 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
-4
-3
10
-2
10
10
Pulse
Duration
t Rectangular
, Square Wave
Pulse
Duration[sec]
[sec]
-1
10
1
1
Figure 14. Transient Thermal Response Curve - FDPF8N50NZ
ZThermal
Response
[oC/W]
JC(t), Thermal
Response
[ZJC
]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
*Notes:
0.01
o
Single pulse
0.01
-5
10
t2
1. ZJC(t) = 3.1 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
10
-2
-1
10
10
1
10
Pulse
Duration
tRectangular
, Square Wave
Pulse
Duration[sec]
[sec]
2
10
3
10
1
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
5
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Figure 15. Gate Charge Test Circuit & Waveform
IG = const.
Figure 16. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
6
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
7
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220 3L
Figure 19. TO-220, Molded, 3Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
8
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220F 3L
Figure 20. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
Dimension in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
10
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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®
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™
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®
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