FES10G

Ultrafast Rectifiers, Surface Mount, 10 A, 200 V - 600 V FES10D, FES10G, FES10J Features • • • • • • • • • • Very Low Profile: Typical Height of 1.1 mm Ultrafast Recovery Time Low Forward Voltage Drop Low Thermal Resistance Very Stable Operation at Industrial Temperature, 150°C RoHS Compliant Green Molding Compound as per IEC61249 Standard Lead Free in Compliance with EU RoHS 2011/65/EU Directive With DAP Option Only Industrial Device Qualified per AEC−Q101 Standards www.onsemi.com 3 2 1 TO−277−3LD CASE 340BQ * See authorized use policy MARKING DIAGRAM MAXIMUM RATINGS Parameter Symbol Repetitive Peak Reverse Voltage FES10D FES10G FES10J VRRM Average Forward Rectified Current IF(AV) 10 A Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load IFSM 150 A Operating Junction Temperature Range TJ −55 to +175 °C TSTG −55 to +175 °C Storage Temperature Range Value $Y&Z&3 * Unit V 200 400 600 $Y &Z &3 * = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code FES10D, FES10G, FES10J 3 Cathode Anode 1 Anode 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 April, 2020 − Rev. 4 1 Publication Order Number: FES10D/D FES10D, FES10G, FES10J ORDERING INFORMATION Part Number Top Mark Package Shipping† FES10D FES10D TO−277 3L (with DAP Option only) 5000 / Tape & Reel FES10G FES10G TO−277 3L (with DAP Option only) 5000 / Tape & Reel FES10J FES10J TO−277 3L (with DAP Option only) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 1) Parameter Symbol Value Unit Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode YJL 6 °C/W Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W 1. Per JESD51−3 Recommended Thermal Test Board. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Value Symbol Parameter Conditions FES10D FES10G FES10J Unit VF Maximum Instantaneous Forward Voltage (Note 2) IF = 10 A 0.95 1.20 1.80 V IF = 10 A, TJ = 125°C 0.86 1.00 − mA IR Maximum Reverse Current at Rated VR CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 140 pF Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 30 ns IF = 1 A, di/dt = 50 A/ms, VR = 30 A 40 TJ = 25°C TJ = 125°C 5 250 500 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle www.onsemi.com 2 FES10D, FES10G, FES10J TYPICAL CHARACTERISTICS 10 10 FES10G IF − FORWARD CURRENT (A) IF − FORWARD CURRENT (A) FES10D 1 o TA = −55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o TA = 125 C 1 o TA = −55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o TA = 125 C o TA = 150 C o TA = 150 C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.001 0.0 1.2 0.2 0.4 VF − FORWARD VOLTAGE (V) 0.8 10 1.2 1.4 100 o IR − LEAKAGE CURRENT (μA) FES10J 1 o TA = −55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o TA = 150 C o TA = 125 C FES10D TA = 75 C 10 1 0.1 0.01 o TA = 125 C 0.001 o o TA = 150 C 0.0 0.5 o TA = 25 C 0.001 1.0 1.5 TA = −55 C 1E−4 2.0 0 20 40 VF − FORWARD VOLTAGE (V) 60 80 100 120 140 160 180 200 VR − REVERSE VOLTAGE (V) Fig 4. Typical Reverse Characteristics for FES10D Fig 3. Typical Forward Characteristics for FES10J 100 100 IR − LEAKAGE CURRENT (μA) TA = 125 C TA = 150 C o FES10G o o IR − LEAKAGE CURRENT (μA) 1.0 Fig 2. Typical Forward Characteristics for FES10G Fig 1. Typical Forward Characteristics for FES10D IF − FORWARD CURRENT (A) 0.6 VF − FORWARD VOLTAGE (V) 10 1 0.1 0.01 0.001 o TA = 150 C FES10J TA = 125 C 10 1 0.1 0.01 o 0.001 TA = −55 C TA = 25 C TA = 75 C TA = 75 C o o o o o TA = −55 C 1E−4 TA = 25 C 1E−4 0 50 100 150 200 250 300 350 400 0 VR − REVERSE VOLTAGE (V) 50 100 150 200 250 300 350 400 450 500 550 600 VR − REVERSE VOLTAGE (V) Fig 5. Typical Reverse Characteristics for FES10G Fig 6. Typical Reverse Characteristics for FES10J www.onsemi.com 3 FES10D, FES10G, FES10J TYPICAL CHARACTERISTICS 1000 CJ − JUNCTION CAPACITANCE (pF) IF − AVERAGE FORWARD CURRENT (A) 12 TL (Cathode) 11 10 9 8 7 6 5 4 3 TA 2 f=1MHz 100 1 0 0 25 50 75 100 125 150 10 0.1 175 1 o 10 VR − REVERSE BIAS VOLTAGE (V) TEMPERATURE ( C) Fig 8. Typical Junction Capacitance Fig 7. Forward Current Derating Curve www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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