Silicon Carbide Schottky
Diode
650 V, 8 A
FFSD0865A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
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1, 2, 4. Cathode
3. Anode
Schottky Diode
Features
•
•
•
•
•
•
•
4
Max Junction Temperature 175°C
Avalanche Rated 49 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
1
2
3
DPAK3 (TO−252, 3 LD)
CASE 369AS
MARKING DIAGRAM
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
$Y&Z&3&K
FFS
D0865A
$Y
&Z
&3
&K
FFSD0865A
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= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
January, 2020 − Rev. 3
1
Publication Order Number:
FFSD0865A/D
FFSD0865A
Table 1. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
FFSD0865A
Unit
Peak Repetitive Reverse Voltage
650
V
Single Pulse Avalanche Energy (Note 1)
49
mJ
Continuous Rectified Forward Current @ TC < 159°C
8
A
Symbol
VRRM
EAS
IF
IF,Max
Continuous Rectified Forward Current @ TC < 135°C
15
Non−Repetitive Peak Forward Surge Current
TC = 25°C, 10 ms
750
A
TC = 150°C, 10 ms
730
A
IF,SM
Non−Repetitive Forward Surge Current
Half−Sine Pulse, tp = 8.3 ms
49
A
IF,RM
Repetitive Forward Surge Current
Half−Sine Pulse, tp = 8.3 ms
28
A
Ptot
Power Dissipation
TC = 25°C
125
W
TC = 150°C
TJ, TSTG
Operating and Storage Temperature Range
21
W
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 49 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V.
Table 2. THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction−to−Case, Max.
RqJC
Rating
Unit
1.2
°C/W
Table 3. OPERATING CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Parameter
Min
Typ
Max
Unit
IF = 8 A, TC = 25°C
−
1.50
1.75
V
IF = 8 A, TC = 125°C
−
1.6
2.0
IF = 8 A, TC = 175°C
−
1.72
2.4
VR = 650 V, TC = 25°C
−
−
200
VR = 650 V, TC = 125°C
−
−
400
VR = 650 V, TC = 175°C
−
−
600
Total Capacitive Charge
V = 400 V
−
27
−
nC
Total Capacitance
VR = 1 V, f = 100 kHz
−
463
−
pF
VR = 200 V, f = 100 kHz
−
48
−
VR = 400 V, f = 100 kHz
−
38
−
Symbol
VF
IR
QC
C
Forward Voltage
Reverse Current
Test Conditions
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PART MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size†
Tape Width
Quantity
FFSD0865A
FFSD0865A
DPAK3
N/A
13″
N/A
2500 units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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2
FFSD0865A
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
−5
10
IR, REVERSE CURRENT (A)
IF , FORWARD CURRENT (A)
8
6
4
TJ = 175 oC
2
TJ = 25
TJ = 125 oC
TJ = 75 oC
0
oC
TJ = −55oC
−6
10
−7
10
TJ = 175 o C
TJ = 75 o C
−8
10
TJ = 25 o C
−9
0.0
0.5
1.0
1.5
10
2.0
200
300
Figure 1. Forward Characteristics
PTOT, POWER DISSIPATION (W)
IF , PEAK FORWARD CURRENT (A)
D = 0.1
D = 0.2
D = 0.3
40
D = 0.5
20 D = 0.7 D = 1
0
25
50
75
100
125
150
120
100
80
60
40
20
0
25
175
o
50
75
100
125
150
175
o
TC, CASE TEMPERATURE ( C)
TC, CASE TEMPERATURE ( C)
Figure 3. Current Derating
Figure 4. Power Derating
40
1000
30
CAPACITANCE (pF)
QC, CAPACITIVE CHARGE (nC)
600 650
140
100
60
500
Figure 2. Reverse Characteristics
140
80
400
TJ = −55 o C
VR, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
120
TJ = 125 o C
20
10
0
0
100
200
300
400
500
100
10
0.1
600 650
VR, REVERSE VOLTAGE (V)
1
10
100
650
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSD0865A
TYPICAL CHARACTERISTICS (Continued)
(TJ = 25°C unless otherwise noted)
EC, CAPACITIVE ENERGY ( m J)
10
8
6
4
2
0
0
100
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Capacitance Stored Energy
2
1
DUTY CIRCLE−DESCENDING ORDER
D=0.5
0.2
PDM
0.1
0.02
0.01
0.01
0.05
0.1
t1
t2
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 1.2 oC/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
−6
10
−5
−4
10
−3
10
1
−2
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
Q1
CURRENT
SENSE
DUT
VAVL
R
+
VDD
IL
IL
I V
VDD
−
t0
t1
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
t2
t
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO−252 3 LD)
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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