Silicon Carbide Schottky
Diode
650 V, 8 A
FFSD0865B-F085
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
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VRRM
IF
650 V
8.0 A
Features
•
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 33 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1., 3. Cathode
2. Anode
Schottky Diode
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
DPAK3 (TO−252, 3 LD)
CASE 369AS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (TJ = 25°C,
IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V)
Continuous Rectified Forward
Current
TC < 153
Non−Repetitive Peak Forward
Surge Current
TC = 25°C,
tP = 10 ms
Symbol
Value
Unit
VRRM
650
V
EAS
33
mJ
IF
8.0
A
TC < 135
Power Dissipation
IFM
A
577
538
TC = 25°C
tP = 8.3 ms
IFSM
42
A
TC = 25°C
Ptot
91
W
TC = 150°C
Operating Junction and Storage Temperature
Range
$Y&Z&3&K
FFS
D0865B
11.6
TC = 150°C,
tP = 10 ms
Non−Repetitive Forward Surge
Current (Half−Sine Pulse)
MARKING DIAGRAM
$Y
&Z
&3
&K
FFSD0865B
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
15
TJ, Tstg
−55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
THERMAL RESISTANCE
Parameter
Thermal Resistance, Junction−to−Case
© Semiconductor Components Industries, LLC, 2019
October, 2020 − Rev. 1
Symbol
Value
Unit
RqJC
1.64
°C/W
1
Publication Order Number:
FFSD0865B−F085/D
FFSD0865B−F085
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IF = 8.0 A, TJ = 25°C
1.39
1.7
V
IF = 8.0 A, TJ = 125°C
1.55
2.0
IF = 8.0 A, TJ = 175°C
1.71
2.4
VR = 650 V, TJ = 25°C
0.5
40
VR = 650 V, TJ = 125°C
1.0
80
VR = 650 V, TJ = 175°C
2.0
160
ON CHARACTERISTICS
VF
IR
Forward Voltage
Reverse Current
mA
CHARGES, CAPACITANCES & GATE RESISTANCE
QC
Total Capacitive Charge
Ctot
VC = 400 V
22
nC
VR = 1 V, f = 100 kHz
336
pF
VR = 200 V, f = 100 kHz
39
VR = 400 V, f = 100 kHz
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PART MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method†
Reel Size
Tape Width
Quantity
FFSD0865B−F085
FFSD0865B
DPAK
Tape & Reel
330 mm
16 mm
2500 units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FFSD0865B−F085
TYPICAL CHARACTERISTICS
TJ = −55o C
6
IR , REVERSE CURRENT (A)
IF, FORWARD CURRENT (A)
8
TJ = 25 o C
TJ = 75 o C
TJ = 125 o C
4
TJ = 175 o C
2
0
0.0
0.4
0.8
1.2
1.6
10
−6
10
−7
TJ = 175 o C
2.0
10
−8
10
−9
TJ = 125 o C
TJ = 75 o C
TJ = 25o C
TJ = −55 oC
100
200
V F , FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
P TOT , POWER DISSIPATION (W)
IF , PEAK FORWARD CURRENT (A)
D = 0.1
D = 0.2
60
D = 0.3
D = 0.5
30
D = 0.7
25
D=1
50
TC
600 650
75
100
125
150
, CASE TEMPERATURE ( oC)
75
50
25
0
175
25
50
TC
Figure 3. Current Derating
75
100
125
150
, CASE TEMPERATURE ( o C)
175
Figure 4. Power Derating
30
1000
20
CAPACITANCE (pF)
Q C , CAPACITIVE CHARGE (nC)
500
100
90
10
0
400
Figure 2. Reverse Characteristics
120
0
300
V R, REVERSE VOLTAGE (V)
0
100
200
300
400
500
100
10
600 650
0.1
1
10
100
V R , REVERSE VOLTAGE (V)
V R , REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
650
FFSD0865B−F085
TYPICAL CHARACTERISTICS
E C , CAPACITIVE ENERGY ( mJ)
8
6
4
2
0
0
100
200
300
400
500
600 650
V R , REVERSE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
0.01
0.001
−6
10
D=0.01
SINGLE PULSE
10
−5
10
−4
10
−3
10
−2
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response
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4
10
−1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13810G
DPAK3 (TO−252 3 LD)
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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