Silicon Carbide Schottky
Diode
650 V, 50 A
FFSH5065A-F155
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
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2. Cathode
Schottky Diode
Features
•
•
•
•
•
•
•
3. Anode
1. No Connection
Max Junction Temperature 175°C
Avalanche Rated 240 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
1
2
3
TO−247
LONG LEAD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
FFSH
5065AF155
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FFSH5065AF155 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
December, 2020 − Rev. 2
1
Publication Order Number:
FFSH5065A−F155/D
FFSH5065A−F155
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
650
V
Single Pulse Avalanche Energy (Note 1)
240
mJ
Continuous Rectified Forward Current @ TC < 144°C
50
A
Symbol
VRRM
EAS
IF
Continuous Rectified Forward Current @ TC < 135°C
IF, Max
Non-Repetitive Peak Forward Surge Current
60
TC = 25°C, 10 ms
1183
A
TC = 150°C, 10 ms
1127
A
IF,SM
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
200
A
IF,RM
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
120
A
Ptot
Power Dissipation
TC = 25°C
429
W
TC = 150°C
TJ, TSTG
Operating and Storage Temperature Range
72
W
−55 to +175
°C
60
Ncm
TO−247 Mounting Torque, M3 Screw
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 240 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 31 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Thermal Resistance, Junction−to−Case, Max. (Note 1)
Rating
Unit
0.35
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
VF
IR
QC
C
Parameter
Min
Typ
Max
Unit
IF = 50 A, TC = 25°C
−
1.51
1.75
V
IF = 50 A, TC = 125°C
−
1.67
2.0
IF = 50 A, TC = 175°C
−
1.82
2.4
VR = 650 V, TC = 25°C
−
−
200
VR = 650 V, TC = 125°C
−
−
400
VR = 650 V, TC = 175°C
−
−
600
Total Capacitive Charge
V = 400 V
−
147
−
nC
Total Capacitance
VR = 1 V, f = 100 kHz
−
2530
−
pF
VR = 200 V, f = 100 kHz
−
271
−
VR = 400 V, f = 100 kHz
−
211
−
Forward Voltage
Reverse Current
Test Condition
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Quantity
FFSH5065A−F155
FFSH5065AF155
TO−247
Tube
30 Units
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2
FFSH5065A−F155
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
−5
10
40
IR, REVERSE CURRENT (A)
IF, FORWARD CURRENT (A)
50
30
20
TJ =
175 oC
TJ = 125 oC
10
TJ = 25 oC
TJ = 75 oC
0
TJ = -55 oC
0
1
2
TJ = -55 oC
−6
10
TJ = 25 oC
TJ = 175 oC
−7
10
TJ = 125 oC
TJ = 75 oC
−8
10
−9
10
3
200
300
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
PTOT, POWER DISSIPATION (W)
IF, PEAK FORWARD CURRENT (A)
400
D = 0.2
D = 0.3
200 D = 0.5
100 D = 0.7
D=1
50
75
100
125
150
400
300
200
100
0
25
175
TC, CASE TEMPERATURE ( oC)
50
75
100
125
150
175
o
TC, CASE TEMPERATURE ( C)
Figure 3. Current Derating
Figure 4. Power Derating
200
10000
160
CAPACITANCE (pF)
QC, CAPACITIVE CHARGE (nC)
600 650
500
D = 0.1
0
25
500
Figure 2. Reverse Characteristics
500
300
400
VR, REVERSE VOLTAGE (V)
120
80
40
0
0
100
200
300
400
500
1000
100
0.1
600650
VR, REVERSE VOLTAGE (V)
1
10
100
650
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSH5065A−F155
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
EC, CAPACITIVE ENERGY (mJ)
50
40
30
20
10
0
0
100
200
300
400
500
600650
VR, REVERSE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
PDM
0.1
0.5
0.01
0.02
0.01
SINGLE PULSE
0.001
−6
10
0.05
−5
t1
0.2
0.1
t2
NOTES:
ZqJC(t) = r(t) x RqJC
RqJC = 0.35 oC/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
−4
10
−3
10
−2
10
1
−1
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
Q1
CURRENT
SENSE
DUT
VAVL
R
+
VDD
IL
IL
I V
VDD
−
t0
t1
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
t2
t
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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