FFSH5065A

FFSH5065A Silicon Carbide Schottky Diode 650 V, 50 A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1. Cathode 2. Anode Schottky Diode Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 240 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits $Y&Z&3&K FFSH 5065A $Y &Z &3 &K FFSH5065A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 March, 2018 − Rev. 3 1 Publication Order Number: FFSH5065A/D FFSH5065A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 240 mJ Continuous Rectified Forward Current @ TC < 144°C 50 A Symbol VRRM EAS IF Continuous Rectified Forward Current @ TC < 135°C IF, Max Non-Repetitive Peak Forward Surge Current 60 TC = 25°C, 10 ms 1400 A TC = 150°C, 10 ms 1300 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 230 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 120 A Ptot Power Dissipation TC = 25°C 429 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 72 W −55 to +175 °C 60 Ncm TO−247 Mounting Torque, M3 Screw Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 240 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 31 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.35 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 50 A, TC = 25°C − 1.51 1.75 V IF = 50 A, TC = 125°C − 1.67 2.0 IF = 50 A, TC = 175°C − 1.82 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 147 − nC Total Capacitance VR = 1 V, f = 100 kHz − 2530 − pF VR = 200 V, f = 100 kHz − 271 − VR = 400 V, f = 100 kHz − 211 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH5065A FFSH5065A TO−247−2LD (Pb-Free / Halogen Free) Tube 30 Units www.onsemi.com 2 FFSH5065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) IR, REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 50 40 30 20 TJ = 175 oC TJ = 125 oC 10 TJ = 25 oC TJ = 75 oC 0 TJ = −55 oC 0 1 2 10 −5 10 −6 T J = −55 o C T J = 25 oC TJ = 175 oC 3 10 −7 10 −8 10 −9 TJ = 125 o C TJ = 75 oC 200 Figure 1. Forward Characteristics 500 600 650 Figure 2. Reverse Characteristics 500 500 D = 0.1 PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 400 V R, REVERESE VOLTAGE (V) VF , FORWARD VOLTAGE (V) 400 D = 0.2 300 D = 0.3 200 D = 0.5 100 D = 0.7 0 25 D=1 50 75 125 150 175 400 300 200 100 0 25 200 o 50 75 100 125 150 175 o T C , CASE TEMPERATURE ( C) TC , CASE TEMPERATURE ( C) Figure 3. Current Derating Figure 4. Power Derating 200 10000 160 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 300 120 80 40 0 0 100 200 300 400 500 1000 100 0.1 600 650 1 10 100 V R, REVERSE VOLTAGE (V) V R, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSH5065A TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY ( mJ) 50 40 30 20 10 0 0 100 200 300 400 500 600 650 V R, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER PDM 0.1 0.01 0.01 0.02 0.05 0.2 0.1 0.5 t1 t2 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 0.35 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −6 10 −5 10 −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 4 1 FFSH5065A TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 5 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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